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公开(公告)号：US11592747B2
公开(公告)日：2023-02-28
申请号：US14650929
申请日：2013-12-12
IPC分类号： G03F7/09 , G03F7/11 , C09D161/12 , H01L21/02 , H01L21/027 , H01L21/311 , H01L21/033
摘要： There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.
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2.发明授权Resist underlayer film-forming composition containing copolymer resin having heterocyclic ring 有权含有具有杂环的共聚物树脂的抗蚀剂下层膜形成组合物公开(公告)号：US09261790B2
公开(公告)日：2016-02-16
申请号：US14370256
申请日：2013-01-25
发明人： Yasunobu Someya , Keisuke Hashimoto , Tetsuya Shinjo , Hirokazu Nishimaki , Ryo Karasawa , Rikimaru Sakamoto
IPC分类号： G03F7/11 , C08G73/06 , C08G12/26 , G03F7/09 , H01L21/308 , C08G16/02 , C09D161/26 , C09D179/04
CPC分类号： G03F7/11 , C08G12/26 , C08G16/0275 , C08G73/06 , C08G73/0627 , C09D161/26 , C09D179/04 , G03F7/094 , H01L21/3088
摘要： A resist underlayer film-forming composition for forming a resist underlayer film having both dry etching resistance and heat resistance. A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1): In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or electron beams and development; etching the hard mask using the resist pattern; etching the underlayer film using the hard mask patterned; and fabricating the semiconductor substrate using the patterned underlayer film.
摘要翻译： 用于形成具有耐干蚀刻性和耐热性的抗蚀剂下层膜的抗蚀剂下层膜形成组合物。 一种抗蚀剂下层膜形成组合物，其包含含有式（1）的单元结构的聚合物：在式（1）中，R 3为氢原子，n 1和n 2都为0.一种半导体器件的制造方法，包括以下步骤 ：使用抗蚀剂下层膜形成组合物在半导体衬底上形成下层膜; 在下层膜上形成硬掩模; 进一步在硬掩模上形成抗蚀剂膜; 通过用光或电子束的照射形成抗蚀剂图案和显影; 使用抗蚀剂图案蚀刻硬掩模; 使用图案化的硬掩模蚀刻下层膜; 并使用图案化的下层膜制造半导体衬底。
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3.发明申请公开(公告)号：US20150194312A1
公开(公告)日：2015-07-09
申请号：US14408310
申请日：2013-06-21
IPC分类号： H01L21/033 , H01L21/311 , H01L21/027
CPC分类号： H01L21/0337 , G03F7/094 , G03F7/11 , G03F7/20 , G03F7/26 , G03F7/32 , G03F7/40 , G06F7/40 , H01L21/0274 , H01L21/0276 , H01L21/0277 , H01L21/0332 , H01L21/31111 , H01L21/31133 , H01L21/31144
摘要： A method of manufacturing a semiconductor device by use of an underlayer film material can form a good pattern without deteriorating the resolution limit. A method of manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; forming an inorganic hard mask on organic underlayer film; forming a resist film on inorganic hard mask; performing irradiation of light or electron beam and solvent development to form a resist pattern; etching inorganic hard mask using resist pattern; etching organic underlayer film using patterned inorganic hard mask; and processing semiconductor substrate using patterned organic underlayer film, wherein the organic underlayer film is an organic underlayer film obtained by applying and heating an organic underlayer film forming composition containing a compound including an organic group having a functional group selected from group consisting of epoxy group, isocyanate group, blocked isocyanate group, and benzocyclobutene ring group, and an organic solvent.
摘要翻译： 通过使用下层膜材料制造半导体器件的方法可以形成良好的图案，而不会降低分辨率极限。 一种制造半导体器件的方法，包括：在半导体衬底上形成有机下层膜; 在有机下层膜上形成无机硬掩模; 在无机硬掩模上形成抗蚀膜; 执行光或电子束的照射和溶剂显影以形成抗蚀剂图案; 使用抗蚀剂图案蚀刻无机硬掩模; 使用图案化无机硬掩模蚀刻有机下层膜; 以及使用图案化的有机下层膜处理半导体衬底，其中有机下层膜是通过施加和加热含有具有选自以下的官能团的有机基团的化合物而获得的有机下层膜获得的有机下层膜：环氧基， 异氰酸酯基，封端异氰酸酯基和苯并环丁烯环基和有机溶剂。
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4.发明申请公开(公告)号：US20150011092A1
公开(公告)日：2015-01-08
申请号：US14370256
申请日：2013-01-25
发明人： Yasunobu Someya , Keisuke Hashimoto , Tetsuya Shinjo , Hirokazu Nishimaki , Ryo Karasawa , Rikimaru Sakamoto
IPC分类号： G03F7/11 , H01L21/308
CPC分类号： G03F7/11 , C08G12/26 , C08G16/0275 , C08G73/06 , C08G73/0627 , C09D161/26 , C09D179/04 , G03F7/094 , H01L21/3088
摘要： A resist underlayer film-forming composition for forming a resist underlayer film having both dry etching resistance and heat resistance. A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1): In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or electron beams and development; etching the hard mask using the resist pattern; etching the underlayer film using the hard mask patterned; and fabricating the semiconductor substrate using the patterned underlayer film.
摘要翻译： 用于形成具有耐干蚀刻性和耐热性的抗蚀剂下层膜的抗蚀剂下层膜形成组合物。 一种抗蚀剂下层膜形成组合物，其包含含有式（1）的单元结构的聚合物：在式（1）中，R 3为氢原子，n 1和n 2都为0.一种半导体器件的制造方法，包括以下步骤 ：使用抗蚀剂下层膜形成组合物在半导体衬底上形成下层膜; 在下层膜上形成硬掩模; 进一步在硬掩模上形成抗蚀剂膜; 通过用光或电子束的照射形成抗蚀剂图案和显影; 使用抗蚀剂图案蚀刻硬掩模; 使用图案化的硬掩模蚀刻下层膜; 并使用图案化的下层膜制造半导体衬底。
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5.发明授权公开(公告)号：US11199777B2
公开(公告)日：2021-12-14
申请号：US15108350
申请日：2014-12-15
IPC分类号： G03F7/09 , G03F7/11 , G03F7/20 , C08G12/08 , C08G8/16 , H01L21/033 , C09D161/22 , G03F7/32 , H01L21/308
摘要： A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.
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公开(公告)号：US10804111B2
公开(公告)日：2020-10-13
申请号：US15760597
申请日：2016-09-15
IPC分类号： H01L21/306 , H01L21/033 , H01L21/308 , H01L33/22 , H01L31/0236 , H01L51/52 , C09D161/34 , C03C17/34 , C09K13/06 , C08F212/32 , C09K13/08 , C03C17/00 , C08G14/06 , C03C15/00 , C09D7/40 , C09D125/02 , C09D161/18 , C08K3/22 , H01L31/0216
摘要： A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.
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公开(公告)号：US10394124B2
公开(公告)日：2019-08-27
申请号：US15520133
申请日：2015-10-27
IPC分类号： G03F7/11 , G03F7/16 , G03F7/20 , G03F7/30 , H01L21/027 , H01L21/306 , H01L21/308 , C08G61/12 , C08G61/02 , G03F7/09 , C09D179/02
摘要： A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2), wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.
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8.发明授权Resist underlayer film forming composition that contains novolac resin having polynuclear phenol 有权含有多酚苯酚酚醛清漆树脂的抗蚀剂下层膜形成组合物公开(公告)号：US09469777B2
公开(公告)日：2016-10-18
申请号：US14415040
申请日：2013-08-13
发明人： Takafumi Endo , Tetsuya Shinjo , Keisuke Hashimoto , Yasunobu Someya , Hirokazu Nishimaki , Ryo Karasawa , Rikimaru Sakamoto
IPC分类号： G03F7/004 , C09D161/12 , C07C39/15 , G03F7/038 , G03F7/11 , H01L21/027 , C08G8/02 , C08G8/04 , C09D161/04 , H01L21/308 , H01L21/311
CPC分类号： C09D161/12 , C07C39/15 , C08G8/02 , C08G8/04 , C09D161/04 , G03F7/038 , G03F7/11 , H01L21/0271 , H01L21/3088 , H01L21/31138 , H01L21/31144
摘要： There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures:
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公开(公告)号：US20140235059A1
公开(公告)日：2014-08-21
申请号：US14348461
申请日：2012-09-25
IPC分类号： H01L21/308
CPC分类号： H01L21/3081 , C08G12/08 , C08G73/026 , C08G73/0273 , C08G73/0672 , C08L61/22 , C08L79/02 , C08L79/04 , C09D161/22 , C09D179/02 , C09D179/04 , G03F7/091 , G03F7/094
摘要： A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): (in Formula (1), each of Ar1 and Ar2 is a benzene ring or a naphthalene ring). A method for manufacturing a semiconductor device, including: forming an underlayer film on a semiconductor substrate with the resist underlayer film-forming composition; forming a hardmask on the underlayer film; forming a resist film on the hardmask; forming a resist pattern by irradiation with light or an electron beam followed by development; etching the hardmask with the resist pattern; etching the underlayer film with the hardmask thus patterned; and processing the semiconductor substrate with the underlayer film thus patterned.
摘要翻译： 一种新型的二芳基胺酚醛清漆树脂，如苯基萘胺酚醛清漆树脂，还有一种抗蚀剂下层膜形成组合物，其中树脂用于制造半导体器件的光刻工艺。 包含式（1）的单元结构（A）的聚合物：（式（1）中，Ar 1和Ar 2各自为苯环或萘环）。 一种半导体器件的制造方法，其特征在于，包括：在所述半导体衬底上形成下层膜，并形成抗蚀剂下层膜组合物; 在下层膜上形成硬掩模; 在硬掩模上形成抗蚀剂膜; 通过用光或电子束的照射形成抗蚀剂图案，随后显影; 用抗蚀剂图案蚀刻硬掩模; 用如此图案化的硬掩模蚀刻下层膜; 并且利用如此构图的下层膜来处理半导体衬底。
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10.发明授权公开(公告)号：US10809619B2
公开(公告)日：2020-10-20
申请号：US14900384
申请日：2014-06-24
发明人： Keisuke Hashimoto , Kenji Takase , Tetsuya Shinjo , Rikimaru Sakamoto , Takafumi Endo , Hirokazu Nishimaki
IPC分类号： G03F7/11 , C09D161/22 , C09D161/06 , C08G12/08 , G03F7/09 , G03F7/40 , C07C39/10 , C07C43/178 , H01L21/311
摘要： A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.
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