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公开(公告)号：US08178448B2
公开(公告)日：2012-05-15
申请号：US12852094
申请日：2010-08-06
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
摘要翻译： 公开了一种使用成膜装置在目标基板上通过CVD形成氮化硅膜同时抑制颗粒产生的方法。 该装置包括附着在处理容器上的处理容器和激励机构。 该方法包括通过执行预循环并通过执行主循环进行成膜过程进行预涂工艺。 预循环和主循环中的每一个交替地包括供给硅源气体的步骤和从氮化气体供给步骤的步骤，该步骤从夹在其间的处理容器内部排出气体。 预涂工艺不包括激发机构激发氮化气体的时间。 成膜过程重复利用激发机构激发氮化气体的第一循环组和不由激发机构激发氮化气体的第二循环。
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公开(公告)号：US08080477B2
公开(公告)日：2011-12-20
申请号：US12285513
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
IPC分类号： H01L21/461 , H01L21/331 , C23C16/452
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4405 , C23C16/45519
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
摘要翻译： 使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜 气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体 基质。 蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。 排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。
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公开(公告)号：US08080290B2
公开(公告)日：2011-12-20
申请号：US12320018
申请日：2009-01-14
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45542
摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
摘要翻译： 使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中 气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。 该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。
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公开(公告)号：US20100304574A1
公开(公告)日：2010-12-02
申请号：US12852094
申请日：2010-08-06
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
摘要翻译： 公开了一种使用成膜装置在目标基板上通过CVD形成氮化硅膜同时抑制颗粒产生的方法。 该装置包括附着在处理容器上的处理容器和激励机构。 该方法包括通过执行预循环并通过执行主循环进行成膜过程进行预涂工艺。 预循环和主循环中的每一个交替地包括提供硅源气体的步骤和从氮化气体供给步骤的步骤，该步骤从其间插入处理容器内部排出气体。 预涂工艺不包括激发机构激发氮化气体的时间。 成膜过程重复利用激发机构激发氮化气体的第一循环组和不由激发机构激发氮化气体的第二循环。
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公开(公告)号：US07604010B2
公开(公告)日：2009-10-20
申请号：US11209741
申请日：2005-08-24
申请人： Kazuhide Hasebe , Nobutake Nodera , Atsushi Endo , Makoto Umeki , Katsumi Nishimura , Masakazu Minami , Makoto Yoshida
发明人： Kazuhide Hasebe , Nobutake Nodera , Atsushi Endo , Makoto Umeki , Katsumi Nishimura , Masakazu Minami , Makoto Yoshida
IPC分类号： H01L21/00
CPC分类号： C23C16/4405 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.
摘要翻译： 用于半导体工艺的成膜装置包括清洁气体供应电路，浓度测量部分和信息处理器。 清洗气体供给回路构成为向反应室供给清洗气体，进行从反应室的内表面除去来自成膜气体的副产物膜的清洗。 集中测定部设置在排气系统中，以监测来自反应室的废气中所含有的预定成分的浓度。 信息处理器被配置为将由浓度测量部获得的测量值与预设值进行比较，从而确定清洁的终点。
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公开(公告)号：US08697578B2
公开(公告)日：2014-04-15
申请号：US12285575
申请日：2008-10-08
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： H01L21/311
CPC分类号： C23C16/345 , C23C16/0218 , C23C16/4405 , C23C16/452 , C23C16/45542 , H01J37/32082 , H01J37/3244 , H01J37/32522
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.
摘要翻译： 在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜 反应室和第一喷嘴，处于反应室不容纳目标基板的状态。 清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序 从反应室内供给清洗反应气体和排气。 蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。
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公开(公告)号：US20090181550A1
公开(公告)日：2009-07-16
申请号：US12318702
申请日：2009-01-06
申请人： Kazuhide Hasebe , Nobutake Nodera , Eun-jo Lee
发明人： Kazuhide Hasebe , Nobutake Nodera , Eun-jo Lee
IPC分类号： H01L21/314 , B05C11/00
CPC分类号： C23C16/345 , C23C16/45527 , C23C16/4554 , C23C16/45546 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A film formation process is performed to form a silicon nitride film on a target substrate within a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. The method is preset to compose the film formation process of a main stage with an auxiliary stage set at one or both of beginning and ending of the film formation process. The main stage includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. The auxiliary stage includes no excitation period of supplying the second process gas to the process field while exciting the second process gas by the exciting mechanism.
摘要翻译： 执行成膜工艺以在被选择性地供给含有硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体的工艺区域内的目标衬底上形成氮化硅膜。 该方法被预设为构成主阶段的成膜过程，其中辅助级设置在成膜过程的开始和结束的一个或两个。 主阶段包括通过激励机构激励第二处理气体的第二处理气体向工艺场供给的激发期。 辅助级不包括通过激励机构激励第二工艺气体的第二工艺气体供给工艺场的激发周期。
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公开(公告)号：US20090114156A1
公开(公告)日：2009-05-07
申请号：US12285512
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： C23C16/00
CPC分类号： C23C16/4405 , C23C16/345 , C23C16/45525 , H01L21/3185
摘要： A film formation apparatus for a semiconductor process includes a support member having a plurality of support levels configured to support target substrates inside a reaction chamber; a film formation gas supply system configured to supply a film formation gas into the reaction chamber and including a gas distribution nozzle; a cleaning gas supply system configured to supply a cleaning gas for etching a by-product film deposited inside the reaction chamber; and an exhaust system configured to exhaust gas from inside the reaction chamber. The cleaning gas supply system includes a gas nozzle disposed near a bottom of the reaction chamber and having a gas supply port at its top directed upward, and the gas supply port is located below the lowermost one of the support levels of the support member.
摘要翻译： 一种用于半导体工艺的成膜装置包括：支撑构件，其具有多个支撑层，构造成支撑反应室内的目标基板; 成膜气体供给系统，其构造成将成膜气体供给到所述反应室中并且包括气体分配喷嘴; 清洁气体供给系统，被配置为提供用于蚀刻沉积在所述反应室内的副产物膜的清洁气体; 以及构造成从反应室内排出气体的排气系统。 清洁气体供给系统包括设置在反应室底部附近的气体喷嘴，其顶部朝向上方具有气体供给口，气体供给口位于支撑构件的支撑水平面的最下方。
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公开(公告)号：US20080311760A1
公开(公告)日：2008-12-18
申请号：US12155678
申请日：2008-06-06
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas.
摘要翻译： 在被配置为选择性地供给包含硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体的工艺过程中进行多个循环，在目标衬底上形成氮化硅膜。 每个循环包括在保持第二处理气体的供给关闭状态的同时进行第一处理气体的供给的第一供给步骤和在保持关闭的同时进行第二处理气体的供给的第二供给步骤 - 第一工艺气体的供给状态。 该方法被布置为重复第一循环集合，其中第二供给步骤包括激发第二处理气体的激发周期，以及第二循环，其中第二供给步骤不包括激发第二处理气体的周期。
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公开(公告)号：US20080003362A1
公开(公告)日：2008-01-03
申请号：US11819500
申请日：2007-06-27
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/4405 , Y10S438/905
摘要： A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.
摘要翻译： 使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。 此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。
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