公开(公告)号：US5952723A

公开(公告)日：1999-09-14

申请号：US827411

申请日：1997-03-27

申请人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

发明人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device has a multilevel interconnection structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and at least one via hole. The via plug partially fills the via hole, and the upper surface of the via plug may have a convex shape or a surface of the lower wiring layer at a bottom of the via hole may have a concave shape. Where two via holes are present, one via plug substantially fills the shallowest via hole, and partially fills the deepest via hole. The upper wiring layer may be formed over the via plug to fill a remaining portion of the via hole not filled by the via plug.

摘要翻译： 半导体器件具有多层互连结构，其包括形成在下布线层，半导体衬底和至少一个通孔上的绝缘夹层。 通孔插头部分地填充通孔，并且通孔插塞的上表面可以具有凸形形状，或者在通孔的底部的下布线层的表面可以具有凹形。 当存在两个通孔时，一个通孔插塞基本上填满最浅的通孔，并且部分填充最深的通孔。 上部布线层可以形成在通孔塞上，以填充未由通孔插塞填充的通孔的剩余部分。

公开(公告)号：US5637534A

公开(公告)日：1997-06-10

申请号：US172717

申请日：1993-12-27

申请人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

发明人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.

摘要翻译： 半导体器件具有多层结构，其包括形成在下布线层，半导体衬底和通孔上的绝缘中间层。 半导体器件通过以下方法制造：包括在作为主要成分的无碳，氯系气体或无碳，氯系气体和惰性气体的气氛中等离子体蚀刻绝缘夹层的至少一个表面 以去除否则将促进绝缘中间层表面上的铝CVD的反应性的污染物。

公开(公告)号：US5627102A

公开(公告)日：1997-05-06

申请号：US569319

申请日：1995-12-08

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US06063703A

公开(公告)日：2000-05-16

申请号：US81047

申请日：1998-05-19

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5973402A

公开(公告)日：1999-10-26

申请号：US791161

申请日：1997-01-30

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US6001736A

公开(公告)日：1999-12-14

申请号：US610341

申请日：1996-03-04

申请人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

发明人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

IPC分类号： H01L21/306 ,  H01L21/768 ,  H01L21/441

CPC分类号： H01L21/02068 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76877

摘要： An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.

摘要翻译： 绝缘层设置在半导体衬底上，在绝缘层中形成接触孔，并且在包括接触孔的内壁的衬底的整个表面上设置下面的金属膜。 通过氢等离子体处理来调整底层金属膜的表面状态。 通过氢等离子体处理，下面的金属膜的表面被氢化并进行溅射蚀刻，从而去除吸附在下面的金属膜的表面上的无序的膜和污染物。 接下来，通过使用有机铝化合物如DMAH的化学气相沉积工艺将铝沉积在下面的金属膜上。 接触孔可以有效地填充铝。

公开(公告)号：US08679913B2

公开(公告)日：2014-03-25

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/8242 ,  H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/316

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US08674273B2

公开(公告)日：2014-03-18

申请号：US13040697

申请日：2011-03-04

申请人： Tomihiro Yonenaga ,  Yumiko Kawano

发明人： Tomihiro Yonenaga ,  Yumiko Kawano

IPC分类号： H05B6/10 ,  C23C16/00

CPC分类号： C23C16/46 ,  H01L21/67109 ,  H05B6/105 ,  H05B6/365 ,  H05B6/44

摘要： Provided is a heat treatment apparatus which, when simultaneously heating substrates placed on susceptors, is capable of controlling the uniformity of temperature within each substrate. The heat treatment apparatus includes: a reaction tube which performs predetermined treatment to wafers; a plurality of susceptors each of which has a mounting surface for mounting the wafer and is made of a conductive material; a rotatable quartz boat wherein the susceptors spaced apart in a direction perpendicular to the mounting surfaces are arranged and supported in the reaction tube; a magnetic field generating unit which is arranged on a sidewall of the processing chamber and includes a pair of electromagnets which generate an AC magnetic field in a direction parallel to the mounting surfaces of the susceptors and inductively heat the susceptors; and a control unit which controls the AC magnetic field generated by the magnetic field generating unit.

摘要翻译： 提供一种热处理装置，当同时加热放置在基座上的基板时，能够控制每个基板内的温度均匀性。 热处理装置包括：对晶片进行预定处理的反应管; 多个感受体具有用于安装晶片并由导电材料制成的安装表面; 一个可旋转的石英舟，其中在垂直于安装表面的方向间隔开的基座被布置和支撑在反应管中; 磁场产生单元，其布置在所述处理室的侧壁上，并且包括一对电磁体，所述一对电磁体在平行于所述基座的安装表面的方向上产生交流磁场并感应加热所述基座; 以及控制单元，其控制由磁场产生单元产生的交流磁场。

公开(公告)号：US20110248024A1

公开(公告)日：2011-10-13

申请号：US13092650

申请日：2011-04-22

申请人： Tomihiro YONENAGA ,  Yumiko Kawano

发明人： Tomihiro YONENAGA ,  Yumiko Kawano

IPC分类号： H05B6/10

CPC分类号： H01L21/67109 ,  H01L21/67303

摘要： In-plane temperature of each substrate is uniformly controlled at the time of heating substrates placed on a plurality of susceptors, respectively. A heat treatment apparatus is provided with susceptors, i.e., conductive members for placing wafers thereon, having an induction heating body electrically divided into a center portion thereof and a peripheral portion thereof; a quartz boat supporting the susceptors arranged in a row; an induction coil, which is arranged inside a processing chamber to surround the circumference of each of the susceptors and configured such that the temperature of the induction coil can be freely adjusted; and a control unit which performs temperature control by changing the ratio between heat value at the center portion of the induction heating body and that at the peripheral portion, by controlling two high frequency currents of different frequencies to be applied to the induction coil from a high frequency current circuit.

摘要翻译： 在分别加热放置在多个基座上的基板时，均匀地控制每个基板的面内温度。 一种热处理设备设置有基座，即用于在其上放置晶片的导电构件，具有电分割成其中心部分的感应加热体及其周边部分; 支撑排列成一排的基座的石英舟; 感应线圈，其布置在处理室内部以围绕每个基座的圆周并且被配置为使得感应线圈的温度可以自由地调节; 以及控制单元，其通过改变感应加热体的中心部分的热值与周边部分的热值之比，通过从高电平控制施加到感应线圈的不同频率的两个高频电流来进行温度控制 频率电流电路。

公开(公告)号：US08029621B2

公开(公告)日：2011-10-04

申请号：US12067714

申请日：2006-07-25

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： C23C16/00

CPC分类号： C23C16/4481

摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.

摘要翻译： 将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元， 放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料 设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华 在第二边。