Laser produced plasma EUV light source
    1.
    发明授权
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US08035092B2

    公开(公告)日:2011-10-11

    申请号:US12655987

    申请日:2010-01-11

    IPC分类号: H04H1/04

    摘要: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

    摘要翻译: 公开了一种可以包括在等离子体位置处产生等离子体的系统,等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件,例如多个远离现场的多层反射镜,以及设置在等离子体和光学元件之间的流动气体,该气体建立足以在该距离上操作的气体压力, d,在离子到达光学器件之前,将离子能量降低到预先选定的值以下。 在一个实施方案中,气体可以包含氢气,并且在一个具体实施方案中,气体可以包含大于50体积%的氢气。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    4.
    发明授权
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号:US07732793B2

    公开(公告)日:2010-06-08

    申请号:US11705954

    申请日:2007-02-13

    IPC分类号: C25F1/00

    摘要: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    摘要翻译: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面,提供了一种EUV计量监测器,其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面,公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面,EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面,公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

    Plasma focus light source with improved pulse power system
    6.
    发明授权
    Plasma focus light source with improved pulse power system 失效
    等离子聚焦光源具有改进的脉冲电源系统

    公开(公告)号:US06815700B2

    公开(公告)日:2004-11-09

    申请号:US10189824

    申请日:2002-07-03

    IPC分类号: H05H104

    摘要: The present invention provides a high energy photon source. A pair of plasma pinch electrodes are located in a vacuum chamber. The chamber contains a working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at voltages high enough to create electrical discharges between the electrodes to produce very high temperature, high density plasma pinches in the working gas providing radiation at the spectral line of the source or active gas. Preferably the electrodes are configured co-axially. The central electrode is preferably hollow and the active gas is introduced out of the hollow electrode. This permits an optimization of the spectral line source and a separate optimization of the buffer gas. In preferred embodiments the central electrode is pulsed with a high negative electrical pulse so that the central electrode functions as a hollow cathode. Preferred embodiments present optimization of capacitance values, anode length and shape and preferred active gas delivery systems are disclosed. Preferred embodiments also include a pulse power system comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer. Special techniques are described for cooling the central electrode. In one example, water is circulated through the walls of the hollow electrode. In another example, a heat pipe cooling system is described for cooling the central electrode.

    摘要翻译: 本发明提供了一种高能量光子源。 一对等离子体夹紧电极位于真空室中。 该室包含工作气体,其包括贵重缓冲气体和被选择用于提供所需光谱线的活性气体。 脉冲电源在电压足够高的电压下提供电脉冲,以在电极之间产生放电,以在工作气体中产生非常高温度,高密度的等离子体夹持,从而在源或活性气体的光谱线处提供辐射。 优选地,电极被同轴配置。 中心电极优选是中空电极,并且活性气体从中空电极引出。 这允许对光谱线源进行优化和缓冲气体的单独优化。 在优选的实施例中,中心电极用高的负电脉冲脉冲,使得中心电极用作空心阴极。 本发明优选的实施例公开了电容值的优化,阳极长度和形状以及优选的活性气体输送系统。 优选实施例还包括脉冲功率系统,其包括充电电容器和包括脉冲变压器的磁压缩电路。 描述了用于冷却中心电极的特殊技术。 在一个实例中,水通过中空电极的壁循环。 在另一个实例中,描述了用于冷却中心电极的热管冷却系统。

    EUV light source
    8.
    发明授权
    EUV light source 有权
    EUV光源

    公开(公告)号:US07323703B2

    公开(公告)日:2008-01-29

    申请号:US11647007

    申请日:2006-12-27

    IPC分类号: H01J35/20

    摘要: An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

    摘要翻译: 描述了可以包括可以包括等离子体形成室的等离子体产生的极紫外(“EUV”)光源多层收集器的装置和方法; 等离子体形成室内的壳体,具有焦点的收集器形状; 壳体具有足够的尺寸和热质量以将工作热量从多层反射器散开,并且在壳体的与焦点相对的一侧上从壳体的表面辐射热量。 壳的材料可以包括选自可以包括碳化硅,硅,Zerodur或ULE玻璃,铝,铍,钼,铜和镍的组的材料。 装置和方法可以包括指向壳体的至少一个辐射加热器,以将壳体的稳态温度维持在所选择的工作温度范围内。

    Collector for EUV light source
    9.
    发明授权
    Collector for EUV light source 失效
    EUV光源收集器

    公开(公告)号:US07288778B2

    公开(公告)日:2007-10-30

    申请号:US11603670

    申请日:2006-11-21

    IPC分类号: H01J35/20

    摘要: It will be understood that an apparatus and method is disclosed, which may comprise a multi-layer reflecting coating forming an EUV reflective surface which may comprise a spectral filter tuned to selectively highly reflect light in a band centered about at a first preferred wavelength and to significantly reduce the reflection of light at a band centered about a second wavelength, e.g., it may be tuned to reflect maximally or almost maximally, near the top of the reflectivity curve, e.g., at around 13.5 nm and at a significantly lower reflectivity at, e.g., around 11 nm, to discriminate against light near 11 nm and favor light at around 13.5 nm. The spectral filter may comprise a plurality of nested grazing angle of incidence shells comprising reflective surfaces comprising the multi-layer reflective coating. e.g. multilayer mirrors, e.g., with one or more reflecting surfaces per shell.

    摘要翻译: 应当理解,公开了一种装置和方法,其可以包括形成EUV反射表面的多层反射涂层,其可以包括调谐为选择性地高度反射在以第一优选波长为中心的带的光的光谱滤光器,并且 显着地减少了在以第二波长为中心的频带处的光的反射,例如,它可以被调谐以在反射率曲线的顶部附近最大或几乎最大程度地反射,例如在大约13.5nm处和在显着较低的反射率处, 例如约11nm,以区分11nm附近的光并有利于约13.5nm的光。 频谱滤波器可以包括多个嵌套的入射角入射壳,包括多层反射涂层的反射表面。 例如 多层反射镜,例如每个壳体具有一个或多个反射表面。

    Collector for EUV light source
    10.
    发明授权
    Collector for EUV light source 有权
    EUV光源收集器

    公开(公告)号:US07217940B2

    公开(公告)日:2007-05-15

    申请号:US10798740

    申请日:2004-03-10

    IPC分类号: H01J35/20

    摘要: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

    摘要翻译: 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎屑的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。