公开(公告)号：US06914279B2

公开(公告)日：2005-07-05

申请号：US10456050

申请日：2003-06-06

申请人： Yicheng Lu ,  Zheng Zhang ,  Nuri William Emanetoglu ,  Masayori Inouye ,  Oleg Mirochnitchenko

发明人： Yicheng Lu ,  Zheng Zhang ,  Nuri William Emanetoglu ,  Masayori Inouye ,  Oleg Mirochnitchenko

IPC分类号： C12Q1/68 ,  G01N21/64 ,  G01N27/00 ,  G01N27/12 ,  G01N27/414 ,  G01N29/02 ,  G01N33/543 ,  H01L29/82

CPC分类号： G01N21/6428 ,  C12Q1/6825 ,  C12Q1/6837 ,  G01N27/4145 ,  G01N27/4146 ,  G01N29/022 ,  G01N33/54373 ,  G01N33/5438 ,  G01N2021/6432 ,  G01N2291/011 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0426 ,  C12Q2565/501 ,  C12Q2565/607

摘要： The present invention provides the multifunctional biological and biochemical sensor technology based on ZnO nanostructures. The ZnO nanotips serve as strong DNA or protein molecule binding sites to enhance the immobilization. Patterned ZnO nanotips are used to provide conductivity-based biosensors. Patterned ZnO nanotips are also used as the gate for field-effect transistor (FET) type sensors. Patterned ZnO nanotips are integrated with SAW or BAW based biosensors. These ZnO nanotip based devices operate in multimodal operation combining electrical, acoustic and optical sensing mechanisms. The multifunctional biosensors can be arrayed and combined into one biochip, which will enhance the sensitivity and accuracy of biological and biochemical detection due to strong immobilization and multimodal operation capability. Such biological and biochemical sensor technology are useful in detection of RNA-DNA, DNA-DNA, protein-protein, protein-DNA and protein-small molecules interaction. It can be further applied for drug discovery, and for environmental monitoring and protection.

摘要翻译： 本发明提供了基于ZnO纳米结构的多功能生物和生物化学传感器技术。 ZnO纳米尖端作为强的DNA或蛋白质分子结合位点来增强固定。 图案化的ZnO纳米尖端用于提供基于导电性的生物传感器。 图案化的ZnO纳米技术也用作场效应晶体管（FET）型传感器的栅极。 图案化的ZnO纳米片与SAW或基于BAW的生物传感器集成。 这些基于ZnO纳米管的器件在电气，声学和光学感测机构的多模式操作中工作。 多功能生物传感器可以排列并组合成一个生物芯片，由于强固定和多模态操作能力，提高了生物和生化检测的灵敏度和准确性。 这种生物和生化传感器技术可用于RNA-DNA，DNA-DNA，蛋白质 - 蛋白质，蛋白质 - DNA和蛋白质 - 小分子相互作用的检测。 可进一步应用于药物发现，环境监测和保护。

公开(公告)号：US06716479B2

公开(公告)日：2004-04-06

申请号：US10266130

申请日：2002-10-07

申请人： Yicheng Lu ,  Nuri William Emanetoglu

发明人： Yicheng Lu ,  Nuri William Emanetoglu

IPC分类号： B05D512

CPC分类号： C30B29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L41/187

摘要： The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.

摘要翻译： 本发明提供了通过使ZnO和MgO合金形成的作为新的压电材料的氧化镁锌（Mg x Zn 1-x O）。 MgxZn1-xO允许薄膜SAW和BAW器件设计的灵活性，因为其压电性能可以通过控制Mg含量以及通过使用MgxZn1-xO / ZnO多层结构来定制。 为了进行实验证明，通过金属有机化学气相沉积，MgXZn1-xO（x <= 0.35）薄膜通过在450℃-500℃范围内的温度在r面蓝宝石衬底上生长。 Mg摩尔％至0.35的MgxZn1-xO薄膜具有外延质量和纤锌矿晶体结构。 SAW特性，包括速度色散和压电耦合，其特征和结论是声速增加，而压电耦合随压电MgxZn1-xO薄膜中Mg摩尔百分数的增加而减小。

公开(公告)号：US06979489B2

公开(公告)日：2005-12-27

申请号：US10243269

申请日：2002-09-13

申请人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri William Emanetoglu

发明人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri William Emanetoglu

IPC分类号： C30B25/02 ,  H01J1/304 ,  H01J9/02 ,  B32B15/00 ,  B32B9/04 ,  B32B3/00

CPC分类号： B82Y30/00 ,  B82Y15/00 ,  C30B25/02 ,  C30B29/16 ,  C30B29/60 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/811 ,  Y10T428/24802 ,  Y10T428/24917

摘要： In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01{overscore (1)}2) Al2O3 substrates as long as the ZnO grows in a columnar stucture along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.

摘要翻译： 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由R平面上沉积的半导体，绝缘体或金属制成的图案化的层或岛上（01（过滤（12）Al 2 O 2 只要ZnO沿着这些材料上的ZnO的c轴[0001]在柱状结构中生长，这些自组装的ZnO纳米尖端和纳米尖端阵列对于在场发射显示器和电子发射中的应用是有希望的 光源带隙器件，近场显微镜，紫外光电子学和生物化学传感器。

公开(公告)号：US06846731B2

公开(公告)日：2005-01-25

申请号：US10158540

申请日：2002-05-30

申请人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong

发明人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/112 ,  H01L21/28

CPC分类号： H01L31/0392 ,  H01L31/022408 ,  H01L31/108 ,  H01L31/1123 ,  Y02E10/50

摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

摘要翻译： 在本发明中，提供了在n型ZnO和Mg x Zn 1-x O外延膜上制造的肖特基UV光电探测器等半导体器件。 ZnO和MgxZn1-xO膜在R平面蓝宝石衬底上生长，肖特基二极管分别用银和铝作为肖特基和欧姆接触金属制作在ZnO和Mg x Zn 1-x O膜上。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

公开(公告)号：US07400030B2

公开(公告)日：2008-07-15

申请号：US11042533

申请日：2005-01-25

申请人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong ,  Shaohua Liang

发明人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong ,  Shaohua Liang

IPC分类号： H01L29/04

CPC分类号： H01L31/0392 ,  H01L31/022408 ,  H01L31/108 ,  H01L31/1123 ,  Y02E10/50

摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

摘要翻译： 在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。