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公开(公告)号:US09349698B2
公开(公告)日:2016-05-24
申请号:US13534565
申请日:2012-06-27
CPC分类号: H01L24/05 , H01L23/3157 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/02126 , H01L2224/0384 , H01L2224/03845 , H01L2224/0391 , H01L2224/0401 , H01L2224/05025 , H01L2224/05147 , H01L2224/05567 , H01L2224/05571 , H01L2224/05647 , H01L2224/1132 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/11849 , H01L2224/13007 , H01L2224/13026 , H01L2924/00014 , H01L2924/351 , H01L2924/00012 , H01L2224/05552
摘要: This disclosure relates generally to a wafer having a plurality of semiconductor chips having a major surface, a metal contact positioned on one of the plurality of semiconductor chips and having a side surface and contact surface, the contact surface substantially parallel to the major surface, wherein the contact surface defines a thickness of the metal contact relative to the major surface, an underfill layer abutting the one of the plurality of semiconductor chips and the side surface of the metal contact, the underfill layer having a top surface substantially parallel to the major surface, wherein the top surface of the underfill layer defines a thickness of the underfill layer relative to the major surface, the thickness of the underfill layer being not greater than the thickness of the metal contact, and a solder bump formed in electrical contact with the contact surface of the metal contact.
摘要翻译: 本公开总体上涉及具有多个具有主表面的半导体芯片的晶片,位于多个半导体芯片之一上的金属触点,并且具有侧表面和接触表面,该接触表面基本上平行于主表面,其中 所述接触表面限定所述金属接触件相对于所述主表面的厚度,底部填充层邻接所述多个半导体芯片中的一个和所述金属接触件的侧表面,所述底部填充层具有基本上平行于所述主表面的顶表面 其中所述底部填充层的顶表面相对于所述主表面限定所述底部填充层的厚度,所述底部填充层的厚度不大于所述金属接触件的厚度,以及形成为与所述触点电接触的焊料凸块 表面的金属接触。
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公开(公告)号:US08502400B2
公开(公告)日:2013-08-06
申请号:US13413616
申请日:2012-03-06
申请人: Prasanna Karpur , Sriram Muthukumar
发明人: Prasanna Karpur , Sriram Muthukumar
CPC分类号: H01L21/563 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/15311 , H01L2924/00
摘要: A dam stiffener for a package substrate is presented. In an embodiment, the dam stiffener comprises a thermally curable polymer, and is simultaneously cured with the underfill material to act as stiffener to the substrate. In another embodiment, a curable reservoir material can be dispensed to fill the space between the integrated circuit die and the dam stiffener, forming a thick reservoir layer, acting as an additional stiffener for the package substrate.
摘要翻译: 提出了一种用于封装衬底的大坝加强件。 在一个实施方案中,坝加强件包括可热固化的聚合物,并且与底部填充材料同时固化以作为基底的加强件。 在另一个实施例中,可以分配可固化储存器材料以填充集成电路管芯和坝加强件之间的空间,形成用作封装衬底的附加加强件的厚的储存层。
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公开(公告)号:US08387240B2
公开(公告)日:2013-03-05
申请号:US12955816
申请日:2010-11-29
IPC分类号: H01K3/10
CPC分类号: H01L23/49827 , H01L21/486 , H01L23/147 , H01L25/0655 , H01L2224/81203 , H01L2224/81815 , H01L2924/10253 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49163 , Y10T29/49165 , H01L2924/00
摘要: In one embodiment, a method includes forming a plurality of vias partially through a body, the vias including sidewalls defined by the body. An electrically insulating layer is formed on the sidewalls and on an upper surface of the body. An electrically conductive layer is formed on the insulating layer in the vias and on the upper surface, the electrically conductive layer defining first metal pads on the upper surface and second metal pads in contact with the first metal pads, the second metal pads having a denser pitch than the first metal pads. A dielectric layer is formed between adjacent first metal pads and between adjacent second metal pads. The body is thinned through a lower surface and the electrically insulating layer in the vias is exposed. After the thinning, a portion of the electrically insulating layer in the, vias is removed. The body is coupled to a substrate.
摘要翻译: 在一个实施例中,一种方法包括通过主体部分地形成多个通孔,通孔包括由身体限定的侧壁。 电绝缘层形成在主体的侧壁和上表面上。 在通孔和上表面上的绝缘层上形成导电层,导电层限定上表面上的第一金属焊盘和与第一金属焊盘接触的第二金属焊盘,第二金属焊盘具有较密的 间距比第一金属垫。 在相邻的第一金属焊盘之间和相邻的第二金属焊盘之间形成介电层。 身体通过下表面变薄,并且通孔中的电绝缘层被暴露。 在变薄之后,去除通孔中的电绝缘层的一部分。 主体耦合到基板。
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公开(公告)号:US08030782B2
公开(公告)日:2011-10-04
申请号:US12789886
申请日:2010-05-28
IPC分类号: H01L23/48
CPC分类号: H01L24/10 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05548 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05681 , H01L2224/13 , H01L2224/13099 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05099
摘要: Embodiments of the invention provide a first component with a compliant interconnect bonded to a second component with a land pad by a metal to metal bond. In some embodiments, the first component may be a microprocessor die and the second component a package substrate.
摘要翻译: 本发明的实施例提供一种第一部件,其具有通过金属与金属粘接的带有焊盘的第二部件与柔性互连件接合。 在一些实施例中,第一部件可以是微处理器管芯,而第二部件可以是封装衬底。
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公开(公告)号:US07800402B1
公开(公告)日:2010-09-21
申请号:US11982865
申请日:2007-11-05
IPC分类号: H03K19/173 , G06F7/38
CPC分类号: H03K19/17736 , H03K19/17728 , H03K19/1778
摘要: A programmable logic device integrated circuit or other integrated circuit may have logic circuitry that produces data signals. The data signals may be routed to other logic circuits through interconnects. The interconnects may be programmable. A level recovery circuit may be used at the end of each interconnect line to strengthen the transmitted data signal. The level recovery circuit that is attached to a given interconnect line may produce true and complementary versions of the data signal that is on that interconnect line. Level shifting circuitry may be provided to boost the data signals on the interconnects. Each interconnect line may have a level shifter circuit that receives the true and complementary versions of a data signal and that produces corresponding boosted true and complementary versions of the data signal. The boosted signals may be provided to the control inputs of complementary-metal-oxide-semiconductor transistor pass gates in programmable look-up table circuitry.
摘要翻译: 可编程逻辑器件集成电路或其他集成电路可以具有产生数据信号的逻辑电路。 数据信号可以通过互连路由到其他逻辑电路。 互连可以是可编程的。 可以在每条互连线的末端使用电平恢复电路,以加强传输的数据信号。 连接到给定互连线的电平恢复电路可以产生在该互连线上的数据信号的真实和互补版本。 可以提供电平移位电路以升高互连上的数据信号。 每个互连线可以具有电平移位器电路,其接收数据信号的真实和互补版本并且产生数据信号的相应增强的真实和互补版本。 升压的信号可以提供给可编程查找表电路中的互补金属氧化物半导体晶体管栅极的控制输入。
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公开(公告)号:US07589424B2
公开(公告)日:2009-09-15
申请号:US12221997
申请日:2008-08-08
IPC分类号: H01L29/00
CPC分类号: H01L23/49827 , H01L21/486 , H01L21/76898 , H01L23/49822 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2924/00014 , H01L2924/01322 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要: Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.
摘要翻译: 本发明的实施例提供一种具有模具和基板的装置,其具有与模具的热膨胀系数相似的热膨胀系数。 衬底可以包括硅基层。 可以在距离模具更远的基底层的侧面上形成堆积层。
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公开(公告)号:US07400041B2
公开(公告)日:2008-07-15
申请号:US10832178
申请日:2004-04-26
申请人: Sriram Muthukumar , Thomas S. Dory
发明人: Sriram Muthukumar , Thomas S. Dory
IPC分类号: H01L23/48
CPC分类号: H01L24/10 , H01L24/13 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/051 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05181 , H01L2224/05548 , H01L2224/05569 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05671 , H01L2224/05681 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/04953 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2924/00014
摘要: A compliant interconnect with two or more layers of metal of two or more compositions with internal stresses is described herein.
摘要翻译: 本文描述了具有两个或更多个具有内部应力的组合物的两层或更多层金属的柔性互连。
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公开(公告)号:US20060286487A1
公开(公告)日:2006-12-21
申请号:US11158168
申请日:2005-06-20
申请人: Charles Hill , Sriram Muthukumar , Patrick Dunaway
发明人: Charles Hill , Sriram Muthukumar , Patrick Dunaway
IPC分类号: G03F7/26
CPC分类号: G03F7/0035 , H05K3/108 , H05K3/4092 , H05K2203/054 , H05K2203/308
摘要: An embodiment of a process is disclosed comprising depositing a sealing layer on a first photoresist layer formed on a substrate, the first photoresist layer having a form patterned and etched therein, depositing a second photoresist layer on the sealing layer, and curing the second photoresist layer by changing its temperature from a first temperature to a second temperature over a set period of time. An embodiment of an apparatus is disclosed comprising a substrate having a first photoresist layer thereon, the first photoresist layer having a form patterned and etched therein, a sealing layer deposited on the first photoresist layer, and a second photoresist layer on the sealing layer, wherein the second photoresist layer is cured by changing its temperature from a first temperature to a second temperature over a set period of time. Other embodiments are disclosed and claimed.
摘要翻译: 公开了一种方法的实施方案,包括在形成在基底上的第一光致抗蚀剂层上沉积密封层,第一光致抗蚀剂层具有图案化和蚀刻在其中的形式,在密封层上沉积第二光致抗蚀剂层,并固化第二光致抗蚀剂层 通过在一段时间内将其温度从第一温度改变到第二温度。 公开了一种装置的实施例,包括其上具有第一光致抗蚀剂层的基底,第一光致抗蚀剂层具有图案化和蚀刻的形式,沉积在第一光致抗蚀剂层上的密封层和密封层上的第二光致抗蚀剂层,其中 第二光致抗蚀剂层通过在一段设定的时间段内将温度从第一温度改变到第二温度来固化。 公开和要求保护其他实施例。
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公开(公告)号:US07049208B2
公开(公告)日:2006-05-23
申请号:US10963489
申请日:2004-10-11
IPC分类号: H01L21/46
CPC分类号: H01L23/49827 , H01L21/486 , H01L21/76898 , H01L23/49822 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2924/00014 , H01L2924/01322 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要: Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.
摘要翻译: 本发明的实施例提供一种具有模具和基板的装置,其具有与模具的热膨胀系数相似的热膨胀系数。 衬底可以包括硅基层。 可以在距离模具更远的基底层的侧面上形成堆积层。
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公开(公告)号:US20060079079A1
公开(公告)日:2006-04-13
申请号:US10963489
申请日:2004-10-11
IPC分类号: H01L21/4763
CPC分类号: H01L23/49827 , H01L21/486 , H01L21/76898 , H01L23/49822 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2924/00014 , H01L2924/01322 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要: Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.
摘要翻译: 本发明的实施例提供一种具有模具和基板的装置,其具有与模具的热膨胀系数相似的热膨胀系数。 衬底可以包括硅基层。 可以在距离模具更远的基底层的侧面上形成堆积层。
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