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    FLASH MEMORY DEVICE AND WORDLINE VOLTAGE GENERATING METHOD THEREOF
    5.
    发明申请
    FLASH MEMORY DEVICE AND WORDLINE VOLTAGE GENERATING METHOD THEREOF 有权
    闪存存储器件及其线性电压产生方法

    公开(公告)号：US20120081957A1

    公开(公告)日：2012-04-05

    申请号：US13246040

    申请日：2011-09-27

    申请人： Seung-Bum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    发明人： Seung-Bum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    IPC分类号： G11C16/06 ,  G11C16/04

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/30 ,  G11C16/3436

    摘要： A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.

    摘要翻译： 一种闪存的字线电压产生方法，包括使用正电压发生器产生编程电压; 使用负电压发生器产生对应于多个负数据状态的多个负编程验证电压; 以及使用所述正电压发生器产生对应于至少一个或多个状态的至少一个或多个程序验证电压。 生成多个负编程验证电压包括产生第一负验证电压; 将负电压发生器的输出放电到高于第一负验证电压; 并执行负电荷泵送操作直到负电压发生器的输出达到第二负验证电压电平。

    Nonvolatile data storage devices, program methods thereof, and memory systems including the same
    8.
    发明授权
    Nonvolatile data storage devices, program methods thereof, and memory systems including the same 有权
    非易失数据存储装置，其程序方法和包括其的存储系统

    公开(公告)号：US08693248B2

    公开(公告)日：2014-04-08

    申请号：US12981934

    申请日：2010-12-30

    申请人： Ohsuk Kwon

    发明人： Ohsuk Kwon

    IPC分类号： G11C11/34

    CPC分类号： G11C16/12 ,  G11C7/02

    摘要： Provided are methods of programming a nonvolatile data storage device including memory blocks sharing a block word line. The methods may include selecting the memory blocks, and the selected memory blocks may include a first memory block that is to be programmed and a second memory block that is to be program-inhibited. The methods may also include applying a program voltage to a selected word line of the first memory block. The methods may further include applying a bipolar prohibition voltage to word lines of the second memory block.

    摘要翻译： 提供了对包含共享块字线的存储块的非易失性数据存储装置进行编程的方法。 所述方法可以包括选择存储器块，并且所选择的存储器块可以包括要编程的第一存储器块和要被编程禁止的第二存储器块。 所述方法还可以包括将编程电压施加到所述第一存储器块的选定字线。 所述方法还可以包括将双极禁止电压施加到第二存储器块的字线。

    Flash memory device and wordline voltage generating method thereof
    9.
    发明授权
    Flash memory device and wordline voltage generating method thereof 有权
    闪存装置及其字线电压产生方法

    公开(公告)号：US08559229B2

    公开(公告)日：2013-10-15

    申请号：US13246040

    申请日：2011-09-27

    申请人： Seung-Gum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    发明人： Seung-Gum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/30 ,  G11C16/3436

    摘要： A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.

    摘要翻译： 一种闪存的字线电压产生方法，包括使用正电压发生器产生编程电压; 使用负电压发生器产生对应于多个负数据状态的多个负编程验证电压; 以及使用所述正电压发生器产生对应于至少一个或多个状态的至少一个或多个程序验证电压。 生成多个负编程验证电压包括产生第一负验证电压; 将负电压发生器的输出放电到高于第一负验证电压; 并执行负电荷泵送操作直到负电压发生器的输出达到第二负验证电压电平。