公开(公告)号：US11969874B2

公开(公告)日：2024-04-30

申请号：US17351060

申请日：2021-06-17

Applicant: Pei-Yu Hsu

Inventor： Pei-Yu Hsu

IPC: B25G1/00 ,  A61G7/012 ,  A61G7/05 ,  B25G1/10 ,  B66F3/16

CPC classification number: B25G1/10 ,  A61G7/012 ,  A61G7/05 ,  B66F3/16

Abstract: A transmission device for lifting a sickbed contains a first casing, a second casing, a power input assembly, a power output assembly, and multiple screw elements. The first casing includes a first rotatable connection portion, a second rotatable connection portion, a first space, and multiple locking orifices. The second casing includes a third rotatable connection portion, a fourth rotatable connection portion, a second space, and multiple coupling orifices. The power input assembly includes an input shaft and a first bevel gear. The power output assembly includes an output shaft and a second bevel gear. The multiple screw elements are inserted through the multiple coupling orifices of the second casing to screw with the multiple locking orifices of the first casing.

公开(公告)号：US11638667B2

公开(公告)日：2023-05-02

申请号：US17128188

申请日：2020-12-20

Applicant: Pei-Yu Hsu

Inventor： Pei-Yu Hsu

IPC: A61G7/018 ,  A61G7/012 ,  A47C19/04 ,  H02K7/06

Abstract: A transmission device of a hospital bed, the hospital bed includes a body, a head, and a bed end. The transmission device contains: a main motor, a connection rod unit, and a driver. The main motor is disposed on a bottom of the body and includes a socket. The connection rod unit includes a first fixing rod connected to the head and a second fixing rod connected to the bed end. The driver is mounted on the main motor and includes an accommodation space, a driving motor, a reducer, a power cable, and a drive shaft. The first case has a first coupling orifice, and the second case has a second coupling orifice. The power cable is connected between the socket and the driving motor so as to supply a power to the driving motor and to lift or descend the head and the bed end synchronously.

公开(公告)号：US20140348889A1

公开(公告)日：2014-11-27

申请号：US14123728

申请日：2012-06-04

Applicant: Christopher Breuer ,  Tarek Fahmy ,  Michael Simons ,  Pei-Yu Chen ,  Daniel Rowe Duncan ,  Joseph Patterson

Inventor： Christopher Breuer ,  Tarek Fahmy ,  Michael Simons ,  Pei-Yu Chen ,  Daniel Rowe Duncan ,  Joseph Patterson

IPC: A61L31/16 ,  A61K31/4439 ,  A61L31/06 ,  C07K16/28 ,  A61L31/14 ,  C12N15/113 ,  A61K38/18

CPC classification number: A61L31/16 ,  A61K31/4178 ,  A61K31/4439 ,  A61K31/444 ,  A61K31/4709 ,  A61K31/498 ,  A61K38/1825 ,  A61K45/06 ,  A61K2039/505 ,  A61L27/18 ,  A61L27/26 ,  A61L27/507 ,  A61L27/54 ,  A61L27/56 ,  A61L27/58 ,  A61L31/041 ,  A61L31/06 ,  A61L31/14 ,  A61L31/146 ,  A61L31/148 ,  A61L2300/204 ,  A61L2300/25 ,  A61L2300/256 ,  A61L2300/258 ,  A61L2300/402 ,  A61L2300/41 ,  A61L2300/416 ,  A61L2300/42 ,  A61L2300/432 ,  A61L2300/436 ,  A61L2300/45 ,  A61L2300/604 ,  A61L2300/61 ,  A61L2300/62 ,  A61L2300/622 ,  A61L2300/624 ,  C07K16/2863 ,  C12N15/113 ,  A61K2300/00

Abstract: Methods for treating or preventing neointima stenosis are disclosed. The methods generally involve the use of a TGFβ inhibitor, a SMAD2 inhibitor, an FGF Receptor agonist, a Let-7 agonist, or a combination thereof, to inhibit endothelial-to-mesenchymal transition (Endo-MT) of vascular endothelial cells into smooth muscle cells (SMC) at sites of endothelial damage. The disclosed methods can therefore be used to prevent or inhibit neointimal stenosis or restenosis, e.g., after angioplasty, vascular graft, or stent. Also disclosed are methods for increasing the patency of biodegradable, synthetic vascular grafts using a composition that inhibits Endo-MT. A cell-free tissue engineered vascular graft (TEVG) produced by this method is also disclosed.

Abstract translation: 公开了治疗或预防新内膜狭窄的方法。 所述方法通常涉及使用TGF-bgr; 抑制剂，SMAD2抑制剂，FGF受体激动剂，Let-7激动剂或其组合，以将血管内皮细胞的内皮 - 间质转化（Endo-MT）抑制在内皮细胞部位的平滑肌细胞（SMC） 损伤。 因此，所公开的方法可用于预防或抑制新生内膜狭窄或再狭窄，例如在血管成形术，血管移植物或支架之后。 还公开了使用抑制Endo-MT的组合物来增加可生物降解的合成血管移植物通畅的方法。 还公开了通过该方法产生的无细胞组织工程化血管移植物（TEVG）。

公开(公告)号：US08717276B2

公开(公告)日：2014-05-06

申请号：US13236848

申请日：2011-09-20

Applicant: Hsiao-Ming Huang ,  Yu-Ting Wang ,  Chia-Chi Ko ,  Heng-Yu Wu ,  Yu-Wen Chou ,  Pei-Yu Chen

Inventor： Hsiao-Ming Huang ,  Yu-Ting Wang ,  Chia-Chi Ko ,  Heng-Yu Wu ,  Yu-Wen Chou ,  Pei-Yu Chen

IPC: G09G3/36

CPC classification number: H05B37/0227

Abstract: A displaying method used in a portable electronic device is provided. The portable electronic device includes a display panel having a backlight module. The displaying method includes the following steps: turning off the backlight module when a rotation event occurs; waiting for a time period; turning on the backlight module.

Abstract translation: 提供了一种在便携式电子装置中使用的显示方法。 便携式电子设备包括具有背光模块的显示面板。 显示方法包括以下步骤：当发生旋转事件时关闭背光模块; 等待一段时间; 打开背光模组。

公开(公告)号：US08676227B2

公开(公告)日：2014-03-18

申请号：US13114000

申请日：2011-05-23

Applicant: Chao-Feng Chueh ,  Pei-Yu Huang ,  Li-Jen Chao

Inventor： Chao-Feng Chueh ,  Pei-Yu Huang ,  Li-Jen Chao

IPC: H04W24/00

CPC classification number: H04L67/1095 ,  G06F11/1458 ,  H04W4/025

Abstract: A method of performing a data transaction between a portable storage device and an electronic device includes determining positions of the portable storage device by a positioning module of the portable storage device, calculating distance between a current position and a position of a previous data transaction to determine whether a position-based criterion is met by a processing module, establishing a data connection between the portable storage device and the electronic device when the position-based criterion is met, and performing the data transaction between the portable storage device and the electronic device.

Abstract translation: 一种在便携式存储设备和电子设备之间执行数据交易的方法包括：通过便携式存储设备的定位模块确定便携式存储设备的位置，计算当前位置与先前数据交易的位置之间的距离，以确定 处理模块是否满足基于位置的标准，当满足基于位置的标准时，在便携式存储设备和电子设备之间建立数据连接，以及执行便携式存储设备和电子设备之间的数据交易。

公开(公告)号：US20130316506A1

公开(公告)日：2013-11-28

申请号：US13479279

申请日：2012-05-24

Applicant: Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

Inventor： Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

IPC: H01L21/336

CPC classification number: H01L21/823425 ,  H01L21/823412 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864

Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成栅极结构。 在栅极结构旁边的基板上形成主间隔物。 源极/漏极形成在主间隔物旁边的衬底中。 在形成源极/漏极之后，在主间隔物旁边的衬底中形成外延结构。 栅极结构可以分别形成在衬底的第一区域和第二区域中。 在衬底上分别在两个栅极结构旁边形成主间隔物。 源极/漏极分别在两个间隔物的旁边的衬底中形成。 在形成两个源极/漏极之后，在主衬垫的旁边分别在衬底中形成外延结构。

公开(公告)号：US08592322B2

公开(公告)日：2013-11-26

申请号：US13535370

申请日：2012-06-28

Applicant: Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin ,  Po-Chao Tsao

Inventor： Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin ,  Po-Chao Tsao

IPC: H01L21/302

CPC classification number: H01L21/76802 ,  H01L21/76831 ,  H01L21/76897

Abstract: A method of fabricating openings is disclosed. First, a semiconductor substrate having a salicide region thereon is provided. An etch stop layer and at least a dielectric layer are disposed on the semiconductor substrate from bottom to top. Second, the dielectric layer and the etching stop layer are patterned to form a plurality of openings in the dielectric layer and in the etching stop layer so that the openings expose the salicide region. Then, a dielectric thin film covering the dielectric layer, sidewalls of the openings and the salicide region is formed. Later, the dielectric thin film disposed on the dielectric layer and on the salicide region is removed.

Abstract translation: 公开了一种制造开口的方法。 首先，提供其上具有自对准硅化物区域的半导体衬底。 蚀刻停止层和至少介电层从底部到顶部设置在半导体衬底上。 其次，对电介质层和蚀刻停止层进行图案化以在电介质层和蚀刻停止层中形成多个开口，使得开口露出自对准区域。 然后，形成覆盖电介质层的电介质薄膜，开口侧壁和自对准硅化物区域。 然后，去除设置在电介质层和自对准硅化物区域上的电介质薄膜。

公开(公告)号：US08461649B2

公开(公告)日：2013-06-11

申请号：US13234159

申请日：2011-09-16

Applicant: Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen ,  Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

Inventor： Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen ,  Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

IPC: H01L29/78

CPC classification number: H01L21/31144 ,  H01L21/76802 ,  H01L21/76831 ,  H01L23/485

Abstract: An opening structure is disclosed. The opening structure includes: a semiconductor substrate; at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall; a dielectric thin film covering at least a portion of the sidewall of each of the openings; an etch stop layer disposed between the semiconductor substrate and the dielectric layer and extending partially into the openings to isolate the dielectric thin film from the semiconductor substrate; and a metal layer filled in the openings.

Abstract translation: 公开了一种开口结构。 开口结构包括：半导体衬底; 设置在所述半导体衬底上的至少一个电介质层，其中所述电介质层具有暴露所述半导体衬底的多个开口，并且每个所述开口具有侧壁; 覆盖每个开口的侧壁的至少一部分的电介质薄膜; 蚀刻停止层，设置在所述半导体衬底和所述电介质层之间并且部分地延伸到所述开口中以将所述电介质薄膜与所述半导体衬底隔离; 以及填充在开口中的金属层。

公开(公告)号：US20120325665A1

公开(公告)日：2012-12-27

申请号：US13486714

申请日：2012-06-01

Applicant: Pei-Yu E. Chiou ,  Kuo-Wei Huang ,  Igor Y. Khandros ,  Ming C. Wu

Inventor： Pei-Yu E. Chiou ,  Kuo-Wei Huang ,  Igor Y. Khandros ,  Ming C. Wu

IPC: G01N27/453 ,  B29C67/24 ,  B82Y99/00 ,  B82Y30/00

CPC classification number: B01L3/502715 ,  B01L2300/123 ,  B01L2300/165 ,  B01L2400/0415 ,  B01L2400/0424 ,  B01L2400/0427 ,  B01L2400/0638 ,  B03C5/005 ,  B03C5/026 ,  B03C2201/26 ,  B82Y30/00 ,  G01N27/44791

Abstract: Microfluidic devices in which electrokinetic mechanisms move droplets of a liquid or particles in a liquid are described. The devices include at least one electrode that is optically transparent and/or flexible.

Abstract translation: 描述了其中电动机构移动液体中的液体或颗粒的液滴的微流体装置。 这些装置包括至少一个光学透明和/或柔性的电极。

公开(公告)号：US08310012B2

公开(公告)日：2012-11-13

申请号：US12759670

申请日：2010-04-13

Applicant: Guang-Yaw Hwang ,  Yu-Ru Yang ,  Jiunn-Hsiung Liao ,  Pei-Yu Chou

Inventor： Guang-Yaw Hwang ,  Yu-Ru Yang ,  Jiunn-Hsiung Liao ,  Pei-Yu Chou

IPC: H01L29/78 ,  H01L21/3205

CPC classification number: H01L21/823842 ,  H01L21/82385 ,  H01L29/42372 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/7833

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric layer formed on the semiconductor substrate, and at least a first conductive-type metal gate formed on the gate dielectric layer. The first conductive-type metal gate includes a filling metal layer and a U-type metal layer formed between the filling metal layer and the gate dielectric layer. A topmost portion of the U-type metal layer is lower than the filling metal layer.

Abstract translation: 半导体器件包括半导体衬底，形成在半导体衬底上的栅极电介质层和形成在栅极介电层上的至少第一导电型金属栅极。 第一导电型金属栅极包括在填充金属层和栅极介电层之间形成的填充金属层和U型金属层。 U型金属层的最上部比填充金属层低。