摘要:
A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield a controllably and reproducible rough surface on which SBT films with excellent properties may be produced or by using a chemically modified substrate surface upon which surface chemical properties are modified. Typical techniques for achieving surface roughening include reactive ion etching, inert ion milling and chemical mechanical polishing, each of which may be used to delineate patterned bottom electrodes. The chemical properties of the substrate may be modified by alloy deposition, deposition of seed layers which are then partially or completely in-diffused ion implantation with or without heat treatment and changing the chemistry of the surface by a pre-exposure to chemical agents prior to deposition. The resultant oxide ferroelectric thin films are suitable for use in capacitors, memory devices and the like.
摘要:
A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.
摘要:
A ceramic layer, in particular having ferroelectric, dielectric or superconducting properties, uses compounds with a simple structure as precursors and only methanoic acid, acetic acid or propionic acid and, where appropriate, water as solvent.
摘要:
A method for producing a ferroelectric layer includes preparing a substrate, applying a layer of material, which will be subsequently converted into the ferroelectric layer, and changing the material into the ferroelectric layer by applying an outer electrical field aligned with the direction desired in the ferroelectric material and heat treating the material. By providing a first noble metal electrode on the surface before applying the material that is to become the ferroelectric layer and then subsequently forming a second noble metal electrode on the ferroelectric layer, a ferroelectric storage capacitor can be formed. If the substrate is provided with memory cells, which include at least one transistor for each cell and the above-mentioned ferroelectric storage capacitors, a ferroelectric memory arrangement can be produced.
摘要:
The invention relates to a ferroelectric RAM configuration, including a number of storage cells, each of which has a selection transistor and a capacitor device with a ferroelectric dielectric. The capacitor device includes at least two capacitors whose coercive voltages are different from each other.
摘要:
A method for producing an integrated semiconductor memory configuration, in particular uses ferroelectric materials as storage dielectrics. A conductive connection between a first electrode of a storage capacitor and a selection transistor is produced only after deposition of the storage dielectric.
摘要:
A process is described for etching oxide films containing at least one bismuth-containing oxide, in particular a ferroelectric bismuth-containing mixed oxide. A substrate onto which at least one oxide film containing at least one bismuth-containing oxide has been applied is provided. An etching solution containing from 2 to 20% by weight of a fluoride ion donor, from 15 to 60% by weight of nitric acid and from 20 to 83% by weight of water is brought into contact with the substrate so that the etching solution can react with the oxide film. The etching solution is removed from the substrate. The etching solution is also used in a process for structuring bismuth-containing oxide films.
摘要:
After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.
摘要:
The capacitor has a capacitor dielectric formed, in particular, as a high-□-dielectrical or ferroelectrical layer. A barrier layer is formed of a compound of a transition element with phosphorus, sulfur or arsenic. The barrier layer is underneath the capacitor dielectric. The barrier layer is oxygen-impermeable and thus prevents the oxidation of deep structures during high-temperature processes, in particular during the production of the capacitor dielectric.
摘要:
A method for fabricating a patterned layer from a layer material. The method includes steps of: providing a substrate with at least one target region and at least one migration region; applying a layer material; adding a material to the layer material; and performing a heat treatment such that the layer material migrates from the migration region to the target region and a layer which is self-aligned and self-patterned with respect to the target region is formed. The method has the advantage that the layer material, which can often only be etched with difficulty, does not have to be patterned directly. The desired structure of the layer is predetermined by preliminarily structuring the substrate into a target region and a migration region, and is produced by the migration of the layer material as a result of the heat treatment.