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公开(公告)号：US20180248086A1
公开(公告)日：2018-08-30
申请号：US15559359
申请日：2016-03-17
Applicant: QINGDAO JASON ELECTRIC CO., LTD.
Inventor： Shengmao BAI , Jie WANG
CPC classification number: H01L33/54 , A61L2/10 , A61L2202/11 , H01L33/486 , H01L33/56 , H01L33/62 , H01L33/64 , H01L33/647 , H01L2224/48091 , H01L2933/005 , H01L2933/0066 , H01L2933/0075 , H01L2924/00014
Abstract: The invention discloses a deep ultraviolet light source and a packaging method thereof. The deep ultraviolet light source includes a deep ultraviolet light emitting diode chip and a lead frame, the deep ultraviolet light emitting diode chip is fixed on the lead frame, the outside of the deep ultraviolet light source is provided with a transparent protective special layer, the transparent protective special layer forms a convex structure on an top side surface of the deep ultraviolet light emitting diode chip, and the transparent protective special layer forms a recessed structure on the side surface of the deep ultraviolet light emitting diode chip. The convex transparent protective special layer formed on the top side surface of the deep ultraviolet light emitting diode chip and the recessed transparent protective special layer formed on the side can effectively reduce the deep UV loss caused by the total reflection on the side surface and the front top side surface, thereby improving the deep UV radiation level and the UV light source light transmission efficiency; in addition, transparent protective special layer is used to replace the quartz lens and protect the deep ultraviolet light diode and that effectively reduces the cost of packaging.
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2.发明申请LIGHT-EMITTING DEVICE WITH HEAVILY DOPED ACTIVE-REGION AND METHOD FOR MANUFACTURING THE SAME 有权具有重点活动区域的发光装置及其制造方法公开(公告)号：US20150263224A1
公开(公告)日：2015-09-17
申请号：US14210083
申请日：2014-03-13
Applicant: QINGDAO JASON ELECTRIC CO., LTD.
Inventor： JIANPING ZHANG
CPC classification number: H01L33/06 , H01L33/007 , H01L33/04 , H01L33/32
Abstract: A light emitting device is provided, which includes an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer. The active-region includes one or more quantum wells each sandwiched by quantum barriers, at least one of the quantum wells has a polarization induced electric field equal to or greater than 106 V/cm, and at least one of the quantum barriers adjacent to the at least one of the quantum wells is doped to generate a PN junction maximum electric field equal to or greater than the polarization induced electric field to substantially cancel out the polarization induced electric field within the at least one of the quantum wells.
Abstract translation: 提供一种发光器件，其包括n型层，p型层和夹在n型层和p型层之间的有源区。 有源区包括一个或多个量子阱，每个量子阱均被量子势垒夹在中间，至少一个量子阱具有等于或大于106V / cm的极化感应电场，并且至少一个量子阱邻近 至少一个量子阱被掺杂以产生等于或大于极化感应电场的PN结最大电场，以基本上抵消至少一个量子阱内的极化感应电场。
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Patent Agency Ranking
公开(公告)号：US09048387B2
公开(公告)日：2015-06-02
申请号：US13964030
申请日：2013-08-09
Applicant: QINGDAO JASON ELECTRIC CO., LTD.
Inventor： Jianping Zhang , Ying Gao , Shuai Wu , Ling Zhou
Abstract: A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed.
Abstract translation: 具有提高光提取效率的发光器件包括n型层，p型层，夹在n型层和p型层之间的有源区，特征AlGaN层，n型层 和形成有特征AlGaN层的AlN层。 特征AlGaN层在从n型层到AlN层的方向上具有从n型层到AlN层的带隙宽度逐渐扩大的带隙宽度。 发光装置还可以包括形成有AlN层的纳米多孔AlN层。
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公开(公告)号：US20150041755A1
公开(公告)日：2015-02-12
申请号：US13964030
申请日：2013-08-09
Applicant: QINGDAO JASON ELECTRIC CO., LTD.
Inventor： JIANPING ZHANG , YING GAO , SHUAI WU , LING ZHOU
Abstract: A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed.
Abstract translation: 具有改善的光提取效率的发光器件包括n型层，p型层，夹在n型层和p型层之间的有源区，特征AlGaN层，n型层 和形成有特征AlGaN层的AlN层。 特征AlGaN层在从n型层到AlN层的方向上具有从n型层到AlN层的带隙宽度逐渐扩大的带隙宽度。 发光装置还可以包括形成有AlN层的纳米多孔AlN层。
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5.发明授权Light-emitting device with heavily doped active-region and method for manufacturing the same 有权具有重掺杂有源区的发光器件及其制造方法公开(公告)号：US09318650B2
公开(公告)日：2016-04-19
申请号：US14210083
申请日：2014-03-13
Applicant: QINGDAO JASON ELECTRIC CO., LTD.
Inventor： Jianping Zhang
CPC classification number: H01L33/06 , H01L33/007 , H01L33/04 , H01L33/32
Abstract: A light emitting device is provided, which includes an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer. The active-region includes one or more quantum wells each sandwiched by quantum barriers, at least one of the quantum wells has a polarization induced electric field equal to or greater than 106 V/cm, and at least one of the quantum barriers adjacent to the at least one of the quantum wells is doped to generate a PN junction maximum electric field equal to or greater than the polarization induced electric field to substantially cancel out the polarization induced electric field within the at least one of the quantum wells.
Abstract translation: 提供一种发光器件，其包括n型层，p型层和夹在n型层和p型层之间的有源区。 有源区包括一个或多个量子阱，每个量子阱均被量子势垒夹在中间，至少一个量子阱具有等于或大于106V / cm的极化感应电场，并且至少一个量子阱邻近 至少一个量子阱被掺杂以产生等于或大于极化感应电场的PN结最大电场，以基本上抵消至少一个量子阱内的极化感应电场。
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公开(公告)号：US20140332754A1
公开(公告)日：2014-11-13
申请号：US14025717
申请日：2013-09-12
Applicant: QINGDAO JASON ELECTRIC CO., LTD.
Inventor： JIANPING ZHANG
IPC: H01L33/06
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/32
Abstract: The present invention presents a solid-state semiconductor light emitting device with reduced forward voltage and improved quantum efficiency. The light emitting device is characterized by its multiple-quantum-well active-region with opposite composition grading in the quantum barriers and quantum wells along the device epitaxy direction.
Abstract translation: 本发明提供一种具有降低的正向电压并提高量子效率的固态半导体发光器件。 发光器件的特征在于其多量子阱活性区域，沿着器件外延方向在量子势垒和量子阱中具有相反的组成分级。
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公开(公告)号：US20130104579A1
公开(公告)日：2013-05-02
申请号：US13662711
申请日：2012-10-29
Applicant: QINGDAO JASON ELECTRIC CO. LTD.
Inventor： Ling Zhou
CPC classification number: F25D17/042 , F25D2317/0417 , F25D2317/0681
Abstract: Embodiments of the invention include a sealed compartment and a door disposed on a side of the sealed compartment, and a cooler for cooling an interior of the sealed compartment. At least one light emitting diode configured to emit light having a peak wavelength in the ultraviolet range is positioned to emit ultraviolet light in the sealed compartment.
Abstract translation: 本发明的实施例包括密封隔室和设置在密封隔室侧面的门和用于冷却密封室内部的冷却器。 配置为发射具有紫外线范围内的峰值波长的光的至少一个发光二极管被定位成在密封室中发射紫外光。
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