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公开(公告)号：US07154339B2
公开(公告)日：2006-12-26
申请号：US10514900
申请日：2003-05-19
Applicant: Niels Kramer , Ronald Koster , Rob Mathijs Heeres , John Joseph Hug
Inventor： Niels Kramer , Ronald Koster , Rob Mathijs Heeres , John Joseph Hug
IPC: H03F3/68
Abstract: An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,1,1 to HBT,1,N) connected to a power supply. A plurality of base resistors (Rb,1,1 to Rb,1,N) for the output transistors (HBT,1,1 to HBT,1,N) and a plurality of input capacitors (Cb,1 to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,1,1 to HBT,1,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,1,1 to HBT,1,N). The transistors (HBT,1,1 to HBT,1,N) are heterojunction bipolar transistors.
Abstract translation: 根据本发明的RF功率放大器包括连接到电源的多个并联输出晶体管（HBT，1,1至HBT，1，N）。 用于输出晶体管（HBT，1,1至HBT，1，N）和多个输入电容器（Cb，1至Cb，N）的多个基本电阻器（Rb，1,1至Rb，1，N） ，每个并联耦合以接收经由至少一个附加无源分量输入并连接到每个对应的输出晶体管（HBT，1,1至HBT，1，N）的输入的RF信号。RF输出的输出 信号从输出晶体管（HBT，1,1至HBT，1，N）的并联连接获得。 晶体管（HBT，1,1至HBT，1，N）是异质结双极晶体管。
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公开(公告)号：US20120132969A1
公开(公告)日：2012-05-31
申请号：US13304215
申请日：2011-11-23
Applicant: Lukas Frederik Tiemeijer , Vittorio Cuoco , Rob Mathijs Heeres , Jan Anne van Steenwijk , Marnix Bernard Willemsen , Josephus Henricus Bartholomeus van der Zanden
Inventor： Lukas Frederik Tiemeijer , Vittorio Cuoco , Rob Mathijs Heeres , Jan Anne van Steenwijk , Marnix Bernard Willemsen , Josephus Henricus Bartholomeus van der Zanden
IPC: H01L27/06
CPC classification number: H01L23/66 , H01L23/5223 , H01L23/642 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2223/6655 , H01L2224/4809 , H01L2224/48091 , H01L2224/48195 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2224/45099 , H01L2924/00
Abstract: A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.
Abstract translation: 公开了一种用于射频晶体管的补偿网络。 补偿网络包括分别耦合到RF晶体管的第一端子和补偿电容器的第一和第二接合棒; 将第一和第二接合棒连接在一起的一个或多个接合线; 以及由耦合到所述第二接合棒的第一组导电元件形成的补偿电容器，所述第一组导电元件与耦合到所述RF晶体管的第二端子的第二组导电元件交错。
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公开(公告)号：US08981433B2
公开(公告)日：2015-03-17
申请号：US13304215
申请日：2011-11-23
Applicant: Lukas Frederik Tiemeijer , Vittorio Cuoco , Rob Mathijs Heeres , Jan Anne van Steenwijk , Marnix Bernard Willemsen , Josephus Henricus Bartholomeus van der Zanden
Inventor： Lukas Frederik Tiemeijer , Vittorio Cuoco , Rob Mathijs Heeres , Jan Anne van Steenwijk , Marnix Bernard Willemsen , Josephus Henricus Bartholomeus van der Zanden
IPC: H01L23/66 , H01L23/522 , H01L23/64 , H01L23/00
CPC classification number: H01L23/66 , H01L23/5223 , H01L23/642 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2223/6655 , H01L2224/4809 , H01L2224/48091 , H01L2224/48195 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2224/45099 , H01L2924/00
Abstract: A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.
Abstract translation: 公开了一种用于射频晶体管的补偿网络。 补偿网络包括分别耦合到RF晶体管的第一端子和补偿电容器的第一和第二接合棒; 将第一和第二接合棒连接在一起的一个或多个接合线; 以及由耦合到所述第二接合棒的第一组导电元件形成的补偿电容器，所述第一组导电元件与耦合到所述RF晶体管的第二端子的第二组导电元件交错。
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公开(公告)号：US20080239597A1
公开(公告)日：2008-10-02
申请号：US11575727
申请日：2005-09-14
Applicant: Adrianus Van Bezooijen , Ronald Koster , Rob Mathijs Heeres , Dmitry Paviovich Prikhodko , Bart Balm
Inventor： Adrianus Van Bezooijen , Ronald Koster , Rob Mathijs Heeres , Dmitry Paviovich Prikhodko , Bart Balm
CPC classification number: H03F1/52 , H03F2200/435 , H03F2200/471
Abstract: A peak voltage protection circuit for protecting an associated High Voltage NPN transistor (T3) against breakdown, the protection circuit comprising a Low Voltage NPN element (T15) for sensing a sensor voltage related to a base-collector voltage of the associated High Voltage NPN transistor (T3). The circuit further comprises an activation circuit for limiting the base-collector voltage of the associated High Voltage NPN transistor (T3) upon triggering. The Low Voltage NPN element (15) is coupled to the activation circuit for triggering it upon the sensor voltage exceeding a breakdown voltage of the Low Voltage NPN transistor (T15).
Abstract translation: 一种用于保护相关联的高电压NPN晶体管（T 3）免于击穿的峰值电压保护电路，所述保护电路包括用于感测与相关联的高电压的基极 - 集电极电压相关的传感器电压的低电压NPN元件（T 15） NPN晶体管（T 3）。 电路还包括用于在触发时限制相关联的高电压NPN晶体管（T 3）的基极 - 集电极电压的激活电路。 低电压NPN元件（15）耦合到激活电路，以在传感器电压超过低电压NPN晶体管（T15）的击穿电压时触发它。
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