摘要:
A process for removal of undesirable conductive material (e.g., catalyst material and seeped circuit material) on a circuitized substrate and the resultant circuitized substrates disclosed. Such process and resultant circuit effectively address the electrical shorting problems caused by nonremoval of the residual catalyst material and circuit material which has seeped under the residual catalyst material. The process includes the steps of: a) providing a catalyst layer (e.g., palladium and tin) having circuit pattern (e.g., copper) thereon; b) pretreating the catalyst layer and the circuit pattern (e.g., with a cyanide dip) for removal of undesirable portions of each which cause electrical leakage between circuit lines of the circuit pattern; c) oxidizing the catalyst layer and the circuit pattern (e.g., with chlorite, permanganate, hydrogen peroxide, or air at a temperature elevated above ambient conditions); and d) removing the undesirable portions of the catalyst layer and the undesirable portions of the circuit pattern (e.g., with a cyanide submersion). The resultant circuitized substrate includes a circuit pattern on a catalyst layer wherein undesirable portions of the catalyst layer and circuit pattern are completely removed between the circuit features of the circuit pattern so that electrical leakage between the circuit features does not occur.
摘要:
A process for removal of undesirable conductive material (e.g., catalyst material and seeped circuit material) on a circuitized substrate and the resultant circuitized substrates disclosed. Such process and resultant circuit effectively address the electrical shorting problems caused by nonremoval of the residual catalyst material and circuit material which has seeped under the residual catalyst material. The process includes the steps of: a) providing a catalyst layer (e.g., palladium and tin) having circuit pattern (e.g., copper) thereon; b) pretreating the catalyst layer and the circuit pattern (e.g., with a cyanide dip) for removal of undesirable portions of each which cause electrical leakage between circuit lines of the circuit pattern; c) oxidizing the catalyst layer and the circuit pattern (e.g., with chlorite, permanganate, hydrogen peroxide, or air at a temperature elevated above ambient conditions); and d) removing the undesirable portions of the catalyst layer and the undesirable portions of the circuit pattern (e.g., with a cyanide submersion). The resultant circuitized substrate includes a circuit pattern on a catalyst layer wherein undesirable portions of the catalyst layer and circuit pattern are completely removed between the circuit features of the circuit pattern so that electrical leakage between the circuit features does not occur.
摘要:
A process for making a circuitized substrate is defined wherein the substrate is treated with two different, e.g., additive and subtractive, metallization processes. The process is thus able to effectively produce substrates including conductive features, e. g., high density circuit lines and chip heat-sinking pads, of two different degrees of resolution in a cost effective and expeditious manner. The resulting product is also defined.
摘要:
A process for making a circuitized substrate is defined wherein the substrate is treated with two different, e.g., additive and subtractive, metallization processes. The process is thus able to effectively produce substrates including conductive features, e.g., high density circuit lines and chip heat-sinking pads, of two different degrees of resolution in a cost effective and expeditious manner. The resulting product is also defined.