公开(公告)号：US20170104150A1

公开(公告)日：2017-04-13

申请号：US15289850

申请日：2016-10-10

申请人： Jing Shi ,  Junxue Li ,  Yadong Xu ,  Mohammed Aldosary ,  Chi Tang ,  Roger Lake

发明人： Jing Shi ,  Junxue Li ,  Yadong Xu ,  Mohammed Aldosary ,  Chi Tang ,  Roger Lake

IPC分类号： H01L43/04 ,  H01L43/14 ,  H01L43/06 ,  H01L43/10

CPC分类号： H01L43/04 ,  H01L37/00 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

摘要： Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between “on” and “off” states by controlling an in-plane magnetization orientation of the magnetic insulator. In the “on” state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the “off” state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.

公开(公告)号：US07303969B2

公开(公告)日：2007-12-04

申请号：US09934334

申请日：2001-08-21

申请人： Paul R. Berger ,  Phillip E. Thompson ,  Roger Lake ,  Karl Hobart ,  Sean L. Rommel

发明人： Paul R. Berger ,  Phillip E. Thompson ,  Roger Lake ,  Karl Hobart ,  Sean L. Rommel

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  H01L29/66151 ,  H01L29/882 ,  Y10S438/979 ,  Y10S438/983

摘要： Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.

摘要翻译： 与Si基工艺（例如但不限于CMOS和SiGe HBT制造）兼容的带间隧道二极管。 公开了带间隧道二极管（i）具有围绕隧道势垒的间隔层; （ii）具有与喷射器之一相邻但不一定接触的量子阱，以及（iii）与底部喷射器相邻但不一定与底部喷射器相邻的第一量子阱以及相邻的第二量子阱 但不一定与顶部喷射器接触。 工艺参数包括用于隧道二极管的生长，沉积或转换的温度过程以及随后的热循环，以改进器件基准，例如峰值电流密度和峰谷电流比。

公开(公告)号：US20080035913A1

公开(公告)日：2008-02-14

申请号：US11464455

申请日：2006-08-14

申请人： Roger Lake ,  Khairul Alam ,  Nicholas A. Burque ,  Rajeev Pandey

发明人： Roger Lake ,  Khairul Alam ,  Nicholas A. Burque ,  Rajeev Pandey

IPC分类号： H01L29/08

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L51/0049 ,  H01L51/0595

摘要： Molecular resonant tunneling diode (RTD) devices that include a molecular linker or bridge between two carbon nanotube (CNT) leads. Such devices include organic material self-assembled between two leads to yield RTD device behavior without the use of metallization of the organic material. Such devices alleviate the aforementioned problems associated with similar devices. Semiconducting carbon nanotubes (CNTs) may be used, and electrical functionality of the device is provided, not by intrinsic bistable properties of the bridge molecule, but by the crossing of resonant levels with the band edges of the leads.

摘要翻译： 分子共振隧穿二极管（RTD）器件，其包括两个碳纳米管（CNT）引线之间的分子接头或桥接器。 这样的装置包括在两个引线之间自组装的有机材料，以产生RTD器件的行为而不使用有机材料的金属化。 这样的设备减轻了与类似设备相关的上述问题。 可以使用半导体碳纳米管（CNT），并且提供器件的电功能，而不是通过桥分子的内在双稳态特性，而是通过谐振电平与引线的带边缘的交叉。

公开(公告)号：US06803598B1

公开(公告)日：2004-10-12

申请号：US09565455

申请日：2000-05-05

申请人： Paul R. Berger ,  Phillip E. Thompson ,  Roger Lake ,  Karl Hobart ,  Sean L. Rommel

发明人： Paul R. Berger ,  Phillip E. Thompson ,  Roger Lake ,  Karl Hobart ,  Sean L. Rommel

IPC分类号： H01L2906

CPC分类号： B82Y10/00 ,  H01L29/66151 ,  H01L29/882 ,  Y10S438/979 ,  Y10S438/983

摘要： Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.

摘要翻译： 与Si基工艺（例如但不限于CMOS和SiGe HBT制造）兼容的带间隧道二极管。 公开了带间隧道二极管（i）具有围绕隧道势垒的间隔层; （ii）具有与喷射器之一相邻但不一定接触的量子阱，以及（iii）与底部喷射器相邻但不一定与底部喷射器相邻的第一量子阱以及相邻的第二量子阱 但不一定与顶部喷射器接触。 工艺参数包括用于隧道二极管的生长，沉积或转换的温度过程以及随后的热循环，以改进器件基准，例如峰值电流密度和峰谷电流比。

公开(公告)号：US11357331B1

公开(公告)日：2022-06-14

申请号：US17300014

申请日：2021-02-08

申请人： Eustace Roger Lake

发明人： Eustace Roger Lake

IPC分类号： A47C1/00 ,  A61G5/14 ,  A47C7/58 ,  A47C7/18

摘要： Many persons that find it difficult to stand from a chair use powered lift chairs that lift the chair seat in an upward direction. These seats are generally one piece seats and offer only one departure angle that is not suitable for all persons. The adjustable angel chair seat allows the person to choose the best departure angle from the seat for the safest departure from the chair.

公开(公告)号：US20050045867A1

公开(公告)日：2005-03-03

申请号：US10695775

申请日：2003-10-30

申请人： Cengiz Ozkan ,  Sathyajith Ravindran ,  Roger Lake ,  Mihrimah Ozkan ,  Natan Portney

发明人： Cengiz Ozkan ,  Sathyajith Ravindran ,  Roger Lake ,  Mihrimah Ozkan ,  Natan Portney

IPC分类号： G11C13/02 ,  H01L21/00 ,  H01L29/06 ,  H01L29/12 ,  H01L29/22 ,  H01L51/05 ,  H01L51/30 ,  H01L31/0328

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/127 ,  H01L29/22 ,  H01L51/0048 ,  H01L51/0508 ,  H01L51/0587 ,  H01L51/0595

摘要： Disclosed herein are nanoscale heterojunctions and methods of making and using thereof. The heterojunctions comprise at least one carbon nanotube with at least one nanostructure such as a quantum dot connected, immobilized, attached, or affixed thereto. The carbon nanotubes may be single walled, multi-walled, or a combination of both. The nanostructure is preferably a quantum dot such as a ZnS capped CdSe core. The carbon nanotube heterojunctions may be employed in various nanoscale electronics and optoelectronic devices and multilayered systems including light emitting diodes, single electron transistors, spintronic devices, field emission flat panel displays, vacuum microelectronic sources, biosensors, random access memories, spin valves, and the like.

摘要翻译： 本文公开了纳米级异质结及其制备和使用方法。 异质结包括至少一个具有至少一个纳米结构的碳纳米管，例如量子点连接，固定，附着或附着于其上。 碳纳米管可以是单壁的，多壁的或两者的组合。 纳米结构优选为量子点，例如ZnS封端的CdSe核。 碳纳米管异质结可用于各种纳米尺度电子学和光电器件以及包括发光二极管，单电子晶体管，自旋电子器件，场致发射平板显示器，真空微电子源，生物传感器，随机存取存储器，自旋阀等多层系统中。 喜欢。

公开(公告)号：US10758439B1

公开(公告)日：2020-09-01

申请号：US16501891

申请日：2019-07-01

申请人： Eustace Roger Lake

发明人： Eustace Roger Lake

IPC分类号： A61G5/14 ,  A47C7/58 ,  A47C31/00

摘要： A chair equipped with a pendant controller to help a person rise from a setting position to a standing position with the assistance of arm rests for stability. The chair allows the rear of the seat to be lifted by an electric lifting device mounted directly under the rear of the seat. The front of the seat is hinged to the front frame of the chair allowing the rear of the seat to be moved up to allow the user to reach a height that allows them to exit the chair. The arm rest allows the person to maintain stability during the process.