公开(公告)号：US08993434B2

公开(公告)日：2015-03-31

申请号：US13226612

申请日：2011-09-07

申请人： Jick M. Yu ,  Rong Tao ,  Xinyu Fu

发明人： Jick M. Yu ,  Rong Tao ,  Xinyu Fu

IPC分类号： H01L21/4763 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76879 ,  H01L2221/1089

摘要： Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.

摘要翻译： 本文提供了在其上形成有一个或多个特征的基底上形成层的方法。 在一些实施例中，用于在其上形成有一个或多个特征的衬底上形成层的方法可包括在一个或多个特征内沉积晶种层; 并且蚀刻种子层以去除邻近特征的开口的种子层的至少一部分，使得种子层包括设置在靠近特征的底部的特征的侧壁的下部的第一厚度，以及第二 厚度设置在靠近特征开口的侧壁的上部，并且其中第一厚度大于第二厚度。

公开(公告)号：US20130341794A1

公开(公告)日：2013-12-26

申请号：US13923979

申请日：2013-06-21

申请人： Jick M. YU ,  Rong TAO

发明人： Jick M. YU ,  Rong TAO

IPC分类号： C25D7/12 ,  H01L23/485

CPC分类号： C25D7/123 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/485 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and process are described that allow electroplating to fill sub-micron, high aspect ratio semiconductor substrate features using a non-copper/pre-electroplating layer on at least upper portions of side walls of the features, thereby providing reliable bottom up accumulation of the electroplating fill material in the feature. This apparatus and process eliminates feature filling material voids and enhances reliability of the electroplating in the diminishing size of features associated with future technology nodes of 22, 15, 11, and 8 nm. The presence of non-copper pre-electroplating material on the side walls allows the feature whose side walls, but not bottom surface, are lined with such pre-electroplating material (such as cobalt) to fill the feature using electroplated fill material accumulating from the bottom of the feature up to reliability and predictability and substantially void-free.

摘要翻译： 描述了一种装置和方法，其允许电镀在特征的侧壁的至少上部上使用非铜/预电镀层填充亚微米，高纵横比的半导体衬底特征，由此提供可靠的自下而上的积累 电镀填充材料的特点。 该设备和工艺消除了特征填充材料的空隙，并增强了与22,15,11和8nm的未来技术节点相关联的特征尺寸减小的电镀的可靠性。 在侧壁上存在非铜预电镀材料允许其侧壁但不是底表面衬有这种预电镀材料（例如钴）的特征，以使用从电镀填充材料积聚的电镀填充材料填充该特征 功能的底部达到可靠性和可预测性，并且基本无效。

公开(公告)号：US08293647B2

公开(公告)日：2012-10-23

申请号：US12620818

申请日：2009-11-18

申请人： Jenn-Yue Wang ,  Hua Chung ,  Rong Tao ,  Hong Zhang

发明人： Jenn-Yue Wang ,  Hua Chung ,  Rong Tao ,  Hong Zhang

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C25D5/022 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/321 ,  H01L2221/1063

摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.

摘要翻译： 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 一个实施例提供了一种提供用于处理衬底的方法的方法，包括在其上形成有沟槽或通孔结构的衬底上形成晶种层，用有机钝化膜涂覆种子层的一部分，以及将沟槽或通孔结构浸入 电镀溶液以在未被有机钝化膜覆盖的种子层上沉积导电材料。

公开(公告)号：US20100130007A1

公开(公告)日：2010-05-27

申请号：US12620818

申请日：2009-11-18

申请人： JENN-YUE WANG ,  Hua Chung ,  Rong Tao ,  Hong Zhang

发明人： JENN-YUE WANG ,  Hua Chung ,  Rong Tao ,  Hong Zhang

IPC分类号： H01L21/3205

CPC分类号： H01L21/76877 ,  C25D5/022 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/321 ,  H01L2221/1063

摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.

摘要翻译： 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 一个实施例提供了一种提供用于处理衬底的方法的方法，包括在其上形成有沟槽或通孔结构的衬底上形成晶种层，用有机钝化膜涂覆种子层的一部分，以及将沟槽或通孔结构浸入 电镀溶液以在未被有机钝化膜覆盖的种子层上沉积导电材料。

公开(公告)号：US20050006222A1

公开(公告)日：2005-01-13

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  C23C14/00 ,  C23C14/32 ,  C25B9/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US06610184B2

公开(公告)日：2003-08-26

申请号：US09993543

申请日：2001-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu

IPC分类号： C23C1435

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76838 ,  H01L21/76877

摘要： An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 公开了一种辅助磁体阵列，该阵列沿着磁控溅射反应器的侧壁朝着晶片从靶标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US08668816B2

公开(公告)日：2014-03-11

申请号：US11933157

申请日：2007-10-31

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US20080099326A1

公开(公告)日：2008-05-01

申请号：US11778648

申请日：2007-07-17

申请人： MENGQI YE ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

发明人： MENGQI YE ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

IPC分类号： C23C14/35

CPC分类号： C23C14/0623 ,  C23C14/351 ,  C23C14/541

摘要： A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

摘要翻译： 用于形成相变存储器的金属硫族化物的等离子体溅射方法，例如锗锑碲化物（GST）。 将基材保持在选定的温度，在该温度下，材料以无定形或结晶形式沉积。 GST具有低温无定形范围和105-120°C的过渡带隔离的高温结晶范围。具有小于10s脉冲宽度的小于50％正脉冲的双极脉冲溅射清洁目标，同时保持 溅射等离子体。 室屏蔽的温度保持在有利于结晶沉积的温度下，或者它们可以用电弧喷涂铝或用结晶取向的铜或铝涂覆。

公开(公告)号：US20060271867A1

公开(公告)日：2006-11-30

申请号：US11140549

申请日：2005-05-27

申请人： Kong Wang ,  Seppo Hamalainen ,  Rong Tao

发明人： Kong Wang ,  Seppo Hamalainen ,  Rong Tao

IPC分类号： G06F9/00 ,  G06F17/00

CPC分类号： H04M1/72544 ,  G06F3/0482 ,  H04M1/72547

摘要： A graphical user interface for an electronic apparatus such as a mobile terminal is presented. The graphical user interface gives a user access to a multi-level structure of selectable user interface items. The graphical user interface involves, on a display of the electronic apparatus, a focused region, an unfocused region and a descriptor region. The focused region presents a first plurality of user interface items belonging to a current level in said multi-level structure. The focused region has a focus area for focusing on a desired user interface item in response to user input on an input device of the electronic apparatus. The unfocused region presents a second plurality of user interface items belonging to at least one level superior to the current level in the multi-level structure. The descriptor region presents descriptive information about a currently focused user interface item in the focus area.

摘要翻译： 提出了诸如移动终端的电子设备的图形用户界面。 图形用户界面使用户能够访问可选择的用户界面项目的多层结构。 图形用户界面在电子设备的显示器上涉及聚焦区域，未聚焦区域和描述符区域。 聚焦区域呈现属于所述多层结构中的当前级别的第一多个用户界面项目。 聚焦区域具有焦点区域，用于响应于在电子设备的输入设备上的用户输入来聚焦在期望的用户界面项目上。 未聚焦区域呈现属于多级结构中优于当前级别的至少一个级别的第二多个用户界面项目。 描述符区域呈现关于焦点区域中当前聚焦的用户界面项目的描述信息。

公开(公告)号：US20050255691A1

公开(公告)日：2005-11-17

申请号：US11184615

申请日：2005-07-19

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。