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38 条记录 (耗时 0.079 秒)

    Information processing apparatus, control apparatus, and method
    1.
    发明授权
    Information processing apparatus, control apparatus, and method 有权
    信息处理装置，控制装置和方法

    公开(公告)号：US08707097B2

    公开(公告)日：2014-04-22

    申请号：US13272326

    申请日：2011-10-13

    申请人： Ryo Kubota ,  Takanori Ishii ,  Kentarou Yuasa

    发明人： Ryo Kubota ,  Takanori Ishii ,  Kentarou Yuasa

    IPC分类号： G06F11/00

    CPC分类号： G06F1/30 ,  G06F11/2015

    摘要： An information processing apparatus includes a controller, a plurality of electric power supply units and a backup electric power supply unit that supply electric power to the controller. The controller detects a malfunction occurring in the plurality of electric power supply units, stops electric power supply from the plurality of electric power supply units, starts electric power supply from the backup electric power supply unit when a malfunction is detected, identifies an electric power supply unit having a malfunction from the plurality of electric power supply units, disconnects the identified electric power supply unit, resumes electric power supply from an electric power supply unit determined to function normally and stops the electric power supply from the backup electric power supply unit when the electric power supply unit having the malfunction is disconnected.

    摘要翻译： 信息处理装置包括控制器，多个电源单元和向控制器提供电力的备用电源单元。 控制器检测多个电力供应单元中发生的故障，停止来自多个电力供应单元的电力供应，当检测到故障时从备用电力供应单元开始供电，识别电力供应 单元具有来自多个电力供应单元的故障，断开所识别的电力供应单元，从被确定为正常工作的电力供应单元恢复电力供应，并且当该备用电力供应单元的电力供应停止时， 具有故障的电力供应单元断开。

    Process for fabricating semiconductor device with multiple cylindrical capacitor
    8.
    发明授权
    Process for fabricating semiconductor device with multiple cylindrical capacitor 失效
    制造具有多个圆柱形电容器的半导体器件的工艺

    公开(公告)号：US06319790B1

    公开(公告)日：2001-11-20

    申请号：US09626458

    申请日：2000-07-26

    申请人： Ryo Kubota

    发明人： Ryo Kubota

    IPC分类号： H01L2120

    CPC分类号： H01L28/90 ,  H01L28/91 ,  H01L28/92

    摘要： A method for making a semiconductor device is provided. In the method, an insulating layer is formed over a semiconductor substrate, and a groove is formed in the insulating layer. Then, a first conductive layer, a first mask layer, a second conductive layer, and a second mask layer are sequentially and conformably formed on an upper surface of the insulating layer and an inner surface of the groove to form a laminated layer. Afterwards, the laminated layer is anisotropically etched to form a multiple cylindrical structure in the groove, and a multiple cylindrical electrode is formed based on the multiple cylindrical structure. Subsequently, a dielectric layer and a plate electrode are sequentially formed on the multiple cylindrical electrode to create a capacitor.

    摘要翻译： 提供一种制造半导体器件的方法。 在该方法中，在半导体衬底上形成绝缘层，并且在绝缘层中形成沟槽。 然后，在绝缘层的上表面和沟槽的内表面上顺序并顺序地形成第一导电层，第一掩模层，第二导电层和第二掩模层，以形成层压层。 之后，对该层叠层进行各向异性蚀刻，在槽内形成多个圆筒状的结构，并且，基于多个圆筒状的结构形成多个圆筒状的电极。 随后，在多个圆柱形电极上依次形成电介质层和平板电极以形成电容器。