公开(公告)号：US06949455B2

公开(公告)日：2005-09-27

申请号：US10677070

申请日：2003-10-01

申请人： Daniel Thanh-Khac Pham ,  Bich-Yen Nguyen ,  James K. Schaeffer ,  Melissa O. Zavala ,  Sherry G. Straub ,  Kimberly G. Reid ,  Marc Rossow ,  James P. Geren

发明人： Daniel Thanh-Khac Pham ,  Bich-Yen Nguyen ,  James K. Schaeffer ,  Melissa O. Zavala ,  Sherry G. Straub ,  Kimberly G. Reid ,  Marc Rossow ,  James P. Geren

IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L21/3205

CPC分类号： H01L29/517 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4933 ,  H01L29/51

摘要： A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.

摘要翻译： 用于提供具有至少两种不同功函数的晶体管栅极的方法利用两种不同金属在不同时间的硅化，一个栅极的硅化，另一个的硅化，或使用具有两个不同掺杂硅结构的单一金属的硅化。 因此，避免了与同时进行两种不同金属的硅化相关的问题。 如果两种金属具有明显不同的硅化物温度，则由于必须也经历用其它金属进行硅化所需的较高温度，具有较低温度硅化的温度可能会显着降低性能。

公开(公告)号：US06689676B1

公开(公告)日：2004-02-10

申请号：US10206475

申请日：2002-07-26

申请人： Daniel Thanh-Khac Pham ,  Al T. Koh ,  Yeong-Jyh T. Lii ,  Robert F. Steimle ,  Anne Vandooren ,  Ricardo Garcia ,  Kimberly G. Reid ,  Marc Rossow ,  James P. Geren

发明人： Daniel Thanh-Khac Pham ,  Al T. Koh ,  Yeong-Jyh T. Lii ,  Robert F. Steimle ,  Anne Vandooren ,  Ricardo Garcia ,  Kimberly G. Reid ,  Marc Rossow ,  James P. Geren

IPC分类号： H01L213205

CPC分类号： H01L29/517 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4933 ,  H01L29/51

摘要： A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.

摘要翻译： 用于提供具有至少两种不同功函数的晶体管栅极的方法利用两种不同金属在不同时间的硅化，一个栅极的硅化，另一个的硅化，或使用具有两个不同掺杂硅结构的单一金属的硅化。 因此，避免了与同时进行两种不同金属的硅化相关的问题。 如果两种金属具有明显不同的硅化物温度，则由于必须也经历用其它金属进行硅化所需的较高温度，具有较低温度硅化的温度可能会显着降低性能。

公开(公告)号：US07534731B2

公开(公告)日：2009-05-19

申请号：US11694643

申请日：2007-03-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0214 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/3144

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5 ×10 12 per cc.

摘要翻译： 用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。 湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。 在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。 在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。 根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12 / cc的界面态密度。

公开(公告)号：US20070259534A1

公开(公告)日：2007-11-08

申请号：US11745278

申请日：2007-05-07

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/303 ,  C23C16/56

摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.

摘要翻译： 提供了一种在衬底上原位形成薄的氧化AlN膜的方法。 该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。 后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。 该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

公开(公告)号：US07776763B2

公开(公告)日：2010-08-17

申请号：US11745278

申请日：2007-05-07

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/303 ,  C23C16/56

摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.

摘要翻译： 提供了一种在衬底上原位形成薄的氧化AlN膜的方法。 该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。 后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。 该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

公开(公告)号：US20090088000A1

公开(公告)日：2009-04-02

申请号：US11865060

申请日：2007-09-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/469

CPC分类号： H01L21/3145 ,  C23C8/34 ,  H01L21/28202 ,  H01L29/518

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first wet process gas to grow an oxide film on the substrate. The method further includes flowing a second wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber, and reacting the oxide film and the substrate with the second wet process gas to grow an oxynitride film. In another embodiment, the method further comprises annealing the substrate containing the oxynitride film in an annealing gas. According to one embodiment of the method where the substrate is silicon, a silicon oxynitride film can be formed that exhibits a nitrogen peak concentration of approximately 3 atomic % or greater.

摘要翻译： 在衬底上生长氮氧化物膜的方法包括将衬底定位在处理室中，加热处理室，将包含水蒸气的第一湿法工艺气体流入处理室，以及使衬底与第一湿法工艺气体反应生长 在基板上的氧化物膜。 所述方法还包括将包含水蒸气的第二湿法工艺气体和包含一氧化氮的氮化气体流入所述处理室，以及使所述氧化物膜和所述衬底与所述第二湿法工艺气体反应以生长氧氮化物膜。 在另一个实施方案中，该方法还包括在退火气体中退火含有氧氮化物膜的基材。 根据基板是硅的方法的一个实施例，可以形成显示大约3原子％以上的氮峰浓度的氮氧化硅膜。

公开(公告)号：US07816278B2

公开(公告)日：2010-10-19

申请号：US12058470

申请日：2008-03-28

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/33

CPC分类号： H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645

摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.

摘要翻译： 一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。 该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在 从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。 该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。 该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

公开(公告)号：US07659214B2

公开(公告)日：2010-02-09

申请号：US11865060

申请日：2007-09-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/3145 ,  C23C8/34 ,  H01L21/28202 ,  H01L29/518

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first wet process gas to grow an oxide film on the substrate. The method further includes flowing a second wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber, and reacting the oxide film and the substrate with the second wet process gas to grow an oxynitride film. In another embodiment, the method further comprises annealing the substrate containing the oxynitride film in an annealing gas. According to one embodiment of the method where the substrate is silicon, a silicon oxynitride film can be formed that exhibits a nitrogen peak concentration of approximately 3 atomic % or greater.

摘要翻译： 在衬底上生长氮氧化物膜的方法包括将衬底定位在处理室中，加热处理室，将包含水蒸气的第一湿法工艺气体流入处理室，以及使衬底与第一湿法工艺气体反应生长 在基板上的氧化物膜。 所述方法还包括将包含水蒸气的第二湿法工艺气体和包含一氧化氮的氮化气体流入所述处理室，以及使所述氧化物膜和所述衬底与所述第二湿法工艺气体反应以生长氧氮化物膜。 在另一个实施方案中，该方法还包括在退火气体中退火含有氧氮化物膜的基材。 根据基板是硅的方法的一个实施例，可以形成显示大约3原子％以上的氮峰浓度的氮氧化硅膜。

公开(公告)号：US20090246971A1

公开(公告)日：2009-10-01

申请号：US12058470

申请日：2008-03-28

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31

CPC分类号： H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645

摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.

摘要翻译： 一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。 该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在 从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。 该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。 该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

公开(公告)号：US20080242109A1

公开(公告)日：2008-10-02

申请号：US11694643

申请日：2007-03-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/314

CPC分类号： H01L21/0214 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/3144

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5×1012 per cc.

摘要翻译： 用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。 湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。 在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。 在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。 根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12的界面态密度 cc。