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    Power semiconductor device
    3.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：US07599203B2

    公开(公告)日：2009-10-06

    申请号：US11619807

    申请日：2007-01-04

    申请人： Shinya Shirakawa ,  Masahiro Kato

    发明人： Shinya Shirakawa ,  Masahiro Kato

    IPC分类号： H02M7/5387

    CPC分类号： H02M7/003 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/49113 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A power semiconductor device M includes: first and second frames for feeding unipolar power from outside; first and second switching units which are series-connected between the first and second frames; an output frame for outputting AC power which is generated by conduction and shutoff of each switching unit to outside; a connecting wire for electrically connecting at least one pair of the first frame and the first switching unit, the first switching unit and the output frame, the output frame and the second switching unit, and the second switching unit and the second frame; a third frame which is arranged close to the output frame; and a branching wire for electrically connecting the first switching unit or the second switching unit to the third frame, whereby sufficiently suppressing surge voltage which takes place within the module even using an external snubber circuit.

    摘要翻译： 功率半导体器件M包括：用于从外部馈送单极电力的第一和第二框架; 第一和第二开关单元，其串联连接在第一和第二框架之间; 输出帧，用于将通过每个切换单元的导通和关闭产生的AC电力输出到外部; 用于将至少一对第一框架和第一开关单元，第一开关单元和输出框架，输出框架和第二开关单元以及第二开关单元和第二框架电连接的连接线; 靠近输出框布置的第三框架; 以及用于将第一开关单元或第二开关单元电连接到第三框架的分支线，由此即使使用外部缓冲电路也能充分地抑制模块内发生的浪涌电压。

    Power semiconductor device
    4.
    发明申请
    Power semiconductor device 失效

    公开(公告)号：US20060113838A1

    公开(公告)日：2006-06-01

    申请号：US11269561

    申请日：2005-11-09

    申请人： Toru Iwagami ,  Shinya Shirakawa

    发明人： Toru Iwagami ,  Shinya Shirakawa

    IPC分类号： H02J1/00

    CPC分类号： H02M7/53873 ,  H02M1/088

    摘要： A power semiconductor device has first and second power switching elements connected in series, with flywheel diodes, and first and second driver circuits connected to gates of the first and second power switching semiconductor elements. Further, a second diode is connected to a line to be connected to a terminal of at least one of the first and second driver circuits in forward direction such that a current does not flow in the line from the terminal through the second diode. For example, the second diode is connected between a power source terminal of the driver circuit and a controlled power source. In another example, the second diode is connected between an input terminal of the driver circuit and a device for supplying a control signal to the input terminal.

    POWER SEMICONDUCTOR DEVICE
    5.
    发明申请
    POWER SEMICONDUCTOR DEVICE 有权
    功率半导体器件

    公开(公告)号：US20080030913A1

    公开(公告)日：2008-02-07

    申请号：US11619807

    申请日：2007-01-04

    申请人： Shinya SHIRAKAWA ,  Masahiro KATO

    发明人： Shinya SHIRAKAWA ,  Masahiro KATO

    IPC分类号： H02H9/02 ,  H02H3/08

    CPC分类号： H02M7/003 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/49113 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A power semiconductor device M includes: first and second frames for feeding unipolar power from outside; first and second switching units which are series-connected between the first and second frames; an output frame for outputting AC power which is generated by conduction and shutoff of each switching unit to outside; a connecting wire for electrically connecting at least one pair of the first frame and the first switching unit, the first switching unit and the output frame, the output frame and the second switching unit, and the second switching unit and the second frame; a third frame which is arranged close to the output frame; and a branching wire for electrically connecting the first switching unit or the second switching unit to the third frame, whereby sufficiently suppressing surge voltage which takes place within the module even using an external snubber circuit.

    摘要翻译： 功率半导体器件M包括：用于从外部馈送单极电力的第一和第二框架; 第一和第二开关单元，其串联连接在第一和第二框架之间; 输出帧，用于将通过每个切换单元的导通和关闭产生的AC电力输出到外部; 用于将至少一对第一框架和第一开关单元，第一开关单元和输出框架，输出框架和第二开关单元以及第二开关单元和第二框架电连接的连接线; 靠近输出框布置的第三框架; 以及用于将第一开关单元或第二开关单元电连接到第三框架的分支线，由此即使使用外部缓冲电路也能充分地抑制模块内发生的浪涌电压。

    Controlling circuit of power semiconductor device and controlling integrated circuit
    6.
    发明申请
    Controlling circuit of power semiconductor device and controlling integrated circuit 审中-公开
    功率半导体器件控制电路及控制集成电路

    公开(公告)号：US20060044726A1

    公开(公告)日：2006-03-02

    申请号：US11028732

    申请日：2005-01-05

    申请人： Hiroshi Sakata ,  Shinya Shirakawa

    发明人： Hiroshi Sakata ,  Shinya Shirakawa

    IPC分类号： H02H3/00

    CPC分类号： H02H7/0838 ,  H02H3/06

    摘要： A shunt voltage that is generated at a shunt resistor (50) is input to overcurrent detecting means (22). When detecting an overcurrent, the overcurrent detecting means (22) inputs a current abnormality signal indicative of a current abnormality to reset signal outputting means (24). The reset signal outputting means (24) stores the occurrence of abnormality from the received current abnormality signal, and waits for recovery from the abnormality afterward. Then, when an overcurrent is no longer detected from the received current abnormality signal, the reset signal outputting means (24) determines that recovery from the abnormality has taken place, and inputs a reset signal composed of a pulse signal of H level for starting the operation to a fault signal output circuit (17) through a reset terminal (RESET). The fault signal output circuit (17) which has received the reset signal inputs a fault signal that has been shifted from L level to H level to a lower arm drive circuit (14).

    摘要翻译： 在分流电阻（50）处产生的并联电压被输入到过电流检测装置（22）。 当检测到过电流时，过电流检测装置（22）将表示电流异常的电流异常信号输入到复位信号输出装置（24）。 复位信号输出装置（24）从接收到的电流异常信号中存储异常的发生，等待从异常中恢复。 然后，当从接收到的当前异常信号中不再检测到过电流时，复位信号输出装置（24）确定已经发生异常恢复，并且输入由H电平的脉冲信号组成的复位信号，以启动 通过复位端（RESET）对故障信号输出电路（17）进行操作。 已经接收到复位信号的故障信号输出电路（17）将从L电平变为H电平的故障信号输入到下臂驱动电路（14）。

    Interface
    7.
    发明授权
    Interface 有权

    公开(公告)号：US06653864B2

    公开(公告)日：2003-11-25

    申请号：US10120373

    申请日：2002-04-12

    申请人： Tooru Iwagami ,  Hiroshi Sakata ,  Shinya Shirakawa

    发明人： Tooru Iwagami ,  Hiroshi Sakata ,  Shinya Shirakawa

    IPC分类号： H03K190175

    CPC分类号： H03K17/08142 ,  H03K19/017545

    摘要： In an interface between a high-active driving circuit for driving a predetermined semiconductor power element and a microcomputer for controlling an output signal of the driving circuit, the microcomputer comprises a transistor, a collector terminal of which is an output side of the microcomputer; and the driving circuit comprises a first resistor, one end of which is directly connected with the output side of the microcomputer; a Schmidt circuit which is connected in series with the other end of the first resistor; a diode, an anode side of which is connected to a path between the first resistor and the Schmidt circuit; a power supply voltage connected with a cathode side of the diode; and a second resistor, one end of which is grounded and the other end of which is connected with a side of the first resistor being an input terminal of the driving circuit.

    Power semiconductor device
    8.
    发明授权
    Power semiconductor device 失效
    功率半导体器件

    公开(公告)号：US07538587B2

    公开(公告)日：2009-05-26

    申请号：US11269561

    申请日：2005-11-09

    申请人： Toru Iwagami ,  Shinya Shirakawa

    发明人： Toru Iwagami ,  Shinya Shirakawa

    IPC分类号： H03B1/00

    CPC分类号： H02M7/53873 ,  H02M1/088

    摘要： A power semiconductor device has first and second power switching elements connected in series, with flywheel diodes, and first and second driver circuits connected to gates of the first and second power switching semiconductor elements. Further, a second diode is connected to a line to be connected to a terminal of at least one of the first and second driver circuits in forward direction such that a current does not flow in the line from the terminal through the second diode. For example, the second diode is connected between a power source terminal of the driver circuit and a controlled power source. In another example, the second diode is connected between an input terminal of the driver circuit and a device for supplying a control signal to the input terminal.

    摘要翻译： 功率半导体器件具有与续流二极管串联连接的第一和第二功率开关元件，以及连接到第一和第二功率开关半导体元件的栅极的第一和第二驱动器电路。 此外，第二二极管连接到要沿正向连接到第一和第二驱动器电路中的至少一个的端子的线，使得电流不从端子流过第二二极管。 例如，第二二极管连接在驱动电路的电源端子和受控电源之间。 在另一示例中，第二二极管连接在驱动器电路的输入端和用于向输入端提供控制信号的装置之间。

    Power semiconductor device
    9.
    发明授权
    Power semiconductor device 失效
    功率半导体器件

    公开(公告)号：US06717828B2

    公开(公告)日：2004-04-06

    申请号：US10274891

    申请日：2002-10-22

    申请人： Toru Iwagami ,  Shinya Shirakawa

    发明人： Toru Iwagami ,  Shinya Shirakawa

    IPC分类号： H02H7122

    CPC分类号： H03K17/16 ,  H02J17/00 ,  H03K17/0826

    摘要： A power semiconductor device includes a half bridge circuit, a control circuit and a noise removal circuit. The half bridge circuit includes a switching element on a low voltage side and a switching element on a high voltage side, those switching elements serially connected. The control circuit controls a switching operation of the switching element on a low voltage side in the half bridge circuit. The control circuit has a supply-voltage receiving terminal connected to a high voltage side of a power supply for driving the control circuit. The noise removal circuit including, for example, a zener diode, is interposed between the supply-voltage receiving terminal of the control circuit and the low voltage side terminal of the switching element on a low voltage side, to remove noise generated on a conductor connected to a low voltage side terminal of the switching element on a low voltage side.

    摘要翻译： 功率半导体器件包括半桥电路，控制电路和噪声去除电路。 半桥电路包括低电压侧的开关元件和高压侧的开关元件，这些开关元件串联连接。 控制电路控制半桥电路中的低电压侧的开关元件的开关动作。 控制电路具有连接到用于驱动控制电路的电源的高压侧的电源电压接收端子。 包括例如齐纳二极管的噪声去除电路被插入在控制电路的电源电压接收端子和低压侧的开关元件的低压侧端子之间，以消除在连接的导体上产生的噪声 到低电压侧的开关元件的低压侧端子。