Light-emitting device structure and semiconductor wafer structure with the same
    2.
    发明授权
    Light-emitting device structure and semiconductor wafer structure with the same 有权
    发光元件结构与半导体晶圆结构相同

    公开(公告)号:US07960749B2

    公开(公告)日:2011-06-14

    申请号:US12421923

    申请日:2009-04-10

    Applicant: Shu Hui Lin

    Inventor: Shu Hui Lin

    CPC classification number: H01L33/20 H01L33/22

    Abstract: A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.

    Abstract translation: 发光器件结构包括具有第一区域和第一区域外部的第二区域的衬底,位于第一区域上的第一导电类型半导体层,位于第一导电类型半导体层上的发光结构,第二导电类型半导体层 位于所述发光结构上的导电型半导体层,以及位于所述第二区域上的壁结构。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20100059773A1

    公开(公告)日:2010-03-11

    申请号:US12327367

    申请日:2008-12-03

    CPC classification number: H01L33/22 H01L33/20 H01L2933/0083

    Abstract: A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.

    Abstract translation: 半导体发光器件包括衬底,位于衬底上的第一导电类型半导体层,位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。 基板包括上表面和位于上表面上的多个突起。 每个突起包括顶表面,多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

    MICRO PROJECTOR MODULE
    5.
    发明申请
    MICRO PROJECTOR MODULE 审中-公开
    微型投影机模块

    公开(公告)号:US20120038839A1

    公开(公告)日:2012-02-16

    申请号:US12899870

    申请日:2010-10-07

    CPC classification number: G02F1/13452 G02F1/136277

    Abstract: A micro projector module according to the present invention is provided. The micro projector module includes a substrate, a controller chip, a LCOS chip, a glass and a liquid crystal layer. The controller chip is positioned on the upper surface of the substrate and electrically connected to the substrate. The LCOS chip is positioned on the controller chip and electrically connected to the substrate. The glass is positioned on the LCOS chip and the liquid crystal layer is disposed between the LCOS chip and glass.

    Abstract translation: 提供了根据本发明的微型投影仪模块。 微型投影仪模块包括基板,控制芯片,LCOS芯片,玻璃和液晶层。 控制器芯片位于基板的上表面上并与基板电连接。 LCOS芯片位于控制器芯片上并电连接到基板。 玻璃位于LCOS芯片上,液晶层设置在LCOS芯片和玻璃之间。

    TFT SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL, AND METHODS FOR MANUFACTURING THE SAME
    6.
    发明申请
    TFT SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL, AND METHODS FOR MANUFACTURING THE SAME 审中-公开
    TFT基板,液晶显示面板及其制造方法

    公开(公告)号:US20070153149A1

    公开(公告)日:2007-07-05

    申请号:US11464041

    申请日:2006-08-11

    CPC classification number: G02F1/136227 G02F1/133555 G02F2203/02

    Abstract: A thin film transistor substrate includes a transparent substrate, a plurality of thin film transistors, a passivation insulating layer and a plurality of pixel electrodes. The thin film transistors are disposed on the transparent substrate and include a gate insulating film. The passivation insulating layer is disposed on the gate insulating film and covers the thin film transistors, wherein the passivation insulating layer is formed with a concave-convex surface, a plurality of contact holes and a plurality of light-transmissive regions, and the light-transmissive regions are located above the gate insulating film. The pixel electrodes are disposed on the concave-convex surface and the light-transmissive regions, wherein each pixel electrode is electrically connected to the thin film transistor via the contact hole.

    Abstract translation: 薄膜晶体管基板包括透明基板,多个薄膜晶体管,钝化绝缘层和多个像素电极。 薄膜晶体管设置在透明基板上并且包括栅极绝缘膜。 钝化绝缘层设置在栅极绝缘膜上并覆盖薄膜晶体管,其中钝化绝缘层形成有凹凸表面,多个接触孔和多个透光区域, 透射区域位于栅极绝缘膜的上方。 像素电极设置在凹凸表面和透光区域上,其中每个像素电极经由接触孔电连接到薄膜晶体管。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20110001147A1

    公开(公告)日:2011-01-06

    申请号:US12856221

    申请日:2010-08-13

    CPC classification number: H01L33/22 H01L33/20 H01L2933/0083

    Abstract: A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.

    Abstract translation: 半导体发光器件包括衬底,位于衬底上的第一导电类型半导体层,位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。 基板包括上表面和位于上表面上的多个突起。 每个突起包括顶表面,多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

    Semiconductor light-emitting device
    9.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号:US08247822B2

    公开(公告)日:2012-08-21

    申请号:US12856221

    申请日:2010-08-13

    CPC classification number: H01L33/22 H01L33/20 H01L2933/0083

    Abstract: A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.

    Abstract translation: 半导体发光器件包括衬底,位于衬底上的第一导电类型半导体层,位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。 基板包括上表面和位于上表面上的多个突起。 每个突起包括顶表面,多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

    LIGHT-EMITTING DEVICE STRUCTURE AND SEMICONDUCTOR WAFER STRUCTURE WITH THE SAME
    10.
    发明申请
    LIGHT-EMITTING DEVICE STRUCTURE AND SEMICONDUCTOR WAFER STRUCTURE WITH THE SAME 有权
    发光装置结构与半导体波长结构

    公开(公告)号:US20100123146A1

    公开(公告)日:2010-05-20

    申请号:US12421923

    申请日:2009-04-10

    Applicant: SHU HUI LIN

    Inventor: SHU HUI LIN

    CPC classification number: H01L33/20 H01L33/22

    Abstract: A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.

    Abstract translation: 发光器件结构包括具有第一区域和第一区域外部的第二区域的衬底,位于第一区域上的第一导电类型半导体层,位于第一导电类型半导体层上的发光结构,第二导电类型半导体层 位于所述发光结构上的导电型半导体层,以及位于所述第二区域上的壁结构。

Patent Agency Ranking