公开(公告)号：US20120211164A1

公开(公告)日：2012-08-23

申请号：US13456080

申请日：2012-04-25

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： H01L21/3065 ,  C23C16/458 ,  C23C16/50 ,  H01L21/306

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20120205046A1

公开(公告)日：2012-08-16

申请号：US13456308

申请日：2012-04-26

申请人： Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad A. Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad A. Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： H01L21/3065

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/503 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32541

摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

摘要翻译： 提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。 在一个实施例中，成形电极被嵌入到基板支撑件中以在腔室内提供具有径向和轴向分量的电场。 在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。 此外，一个或多个电极可以嵌入在腔室侧壁中。

公开(公告)号：US08197636B2

公开(公告)日：2012-06-12

申请号：US12106881

申请日：2008-04-21

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20090314211A1

公开(公告)日：2009-12-24

申请号：US12483845

申请日：2009-06-12

申请人： Dale R. Du Bois ,  Mark A. Fodor ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez

发明人： Dale R. Du Bois ,  Mark A. Fodor ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez

IPC分类号： C23C16/458 ,  B23Q1/44

CPC分类号： H01L21/68742

摘要： Embodiments described herein generally provide a lift pin assembly having increased wafer placement accuracy, repeatability, reliability, and corrosion resistance. In one embodiment, a lift pin assembly for positioning a substrate relative to a substrate support is provided. The lift pin assembly comprises a lift pin comprising a pin shaft, a pin head coupled with a first end of the pin shaft for supporting the substrate, and a shoulder coupled with a second end of the pin shaft. The lift pin assembly further comprises a cylindrical body slidably coupled with the pin shaft and a locking pin for preventing the cylindrical body from sliding along the shaft, wherein the shoulder has a through-hole dimensioned to accommodate the locking pin.

摘要翻译： 本文描述的实施例通常提供具有增加的晶片放置精度，重复性，可靠性和耐腐蚀性的提升销组件。 在一个实施例中，提供了一种用于相对于衬底支撑件定位衬底的提升销组件。 提升销组件包括提升销，该提升销包括销轴，与销轴的第一端联接以支撑衬底的销头，以及与销轴的第二端联接的肩部。 提升销组件还包括与销轴可滑动地连接的圆柱形主体和用于防止圆柱形主体沿着轴滑动的锁定销，其中肩部具有尺寸适于容纳锁定销的通孔。

公开(公告)号：US20080178797A1

公开(公告)日：2008-07-31

申请号：US11668947

申请日：2007-01-30

申请人： MARK A. FODOR ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

发明人： MARK A. FODOR ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

IPC分类号： B05C11/00

CPC分类号： C23C16/46

摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.

摘要翻译： 提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。 在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。 从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。 衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。

公开(公告)号：US5633073A

公开(公告)日：1997-05-27

申请号：US502585

申请日：1995-07-14

申请人： David W. Cheung ,  Mark A. Fodor ,  Christopher Lane ,  Harold H. Mortensen

发明人： David W. Cheung ,  Mark A. Fodor ,  Christopher Lane ,  Harold H. Mortensen

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52 ,  H01L21/00 ,  H01L21/687 ,  B32B9/00

CPC分类号： C23C16/45565 ,  C23C16/4586 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/68785 ,  H01L21/68792 ,  Y10T428/24917

摘要： A ceramic susceptor with an embedded metal electrode. The metal electrode has multiple apertures, and the ceramic material is cross-linked through the apertures. An electrical connection to the electrode protects the electrode from the environment in the processing chamber. The ceramic may be aluminum nitride, and the metal electrode may be a mesh of molybdenum wires. To form the electrical connection, the susceptor may be heated until an eutectic forms between a conductive connector and the metal electrode. Alternately, a brazing material may be placed between the metal layer and a conductive connector.

摘要翻译： 具有嵌入式金属电极的陶瓷感受体。 金属电极具有多个孔，陶瓷材料通过孔交联。 与电极的电连接保护电极免受处理室中的环境的影响。 陶瓷可以是氮化铝，金属电极可以是钼丝网。 为了形成电连接，基座可以被加热直到在导电连接器和金属电极之间形成共晶体。 或者，钎焊材料可以放置在金属层和导电连接器之间。

公开(公告)号：US5531835A

公开(公告)日：1996-07-02

申请号：US246015

申请日：1994-05-18

申请人： Mark A. Fodor ,  Craig A. Bercaw ,  Charles Dornfest

发明人： Mark A. Fodor ,  Craig A. Bercaw ,  Charles Dornfest

IPC分类号： B23Q3/15 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  C23C16/00

CPC分类号： H01L21/6831

摘要： A susceptor or other semiconductor wafer processing and/or transfer support platform includes a surface pattern having two or more regions of high and low elevation. The regions of high and low elevations can be rectangular/square dimpled patterns having tops coplanar with one another to support a semiconductor wafer for processing. The high and low regions can also be a wave form appearing to emanate from a point, where each of the wave crests form an imaginary plane on which a wafer to be processed can rest. The combination of high and low regions increases the average spacing between the wafer and the susceptor and reduces or eliminates the capacitive coupling (or sticking force) between processing hardware and a substrate (wafer) created by electrical fields during processing. The dimpled patterns are created by machining and can be created by using chemical and electrochemical etching of the wafer handling surfaces of processing hardware pieces.

摘要翻译： 感受器或其他半导体晶片处理和/或转移支撑平台包括具有两个或更多个高和低仰角区域的表面图案。 高和低高度的区域可以是具有彼此共面的顶部的矩形/正方形凹凸图案，以支撑用于处理的半导体晶片。 高低区域也可以是从一个点发出的波形，其中每个波峰形成一个虚拟平面，待处理的晶片可以放置在该虚拟平面上。 高和低区域的组合增加了晶片和基座之间的平均间隔，并且减少或消除了处理硬件与在处理期间由电场产生的衬底（晶片）之间的电容耦合（或粘附力）。 凹凸图案通过机械加工产生，并且可以通过使用化学和电化学蚀刻加工硬件件的晶片处理表面来产生。

公开(公告)号：US08444926B2

公开(公告)日：2013-05-21

申请号：US11668947

申请日：2007-01-30

申请人： Mark A. Fodor ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

发明人： Mark A. Fodor ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

IPC分类号： A62D3/00 ,  B01J19/00 ,  C23F1/00 ,  H01L21/306 ,  B05C11/00 ,  C23C16/00 ,  H05B3/00 ,  H05B11/00

CPC分类号： C23C16/46

摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.

摘要翻译： 提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。 在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。 从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。 衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。

公开(公告)号：US20080152838A1

公开(公告)日：2008-06-26

申请号：US11877313

申请日：2007-10-23

申请人： SOOVO SEN ,  MARK A. FODOR ,  VISWESWAREN SIVARAMAKRISHNAN ,  JUNTING LIU

发明人： SOOVO SEN ,  MARK A. FODOR ,  VISWESWAREN SIVARAMAKRISHNAN ,  JUNTING LIU

IPC分类号： H05H1/24

CPC分类号： C23C16/4585 ,  C23C16/45521 ,  C23C16/5096

摘要： Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.

摘要翻译： 根据本发明的实施例涉及可以单独使用或组合使用以减少或消除材料在半导体工件的斜面上的沉积的各种技术。 在一种方法中，阴影环覆盖在衬底的边缘上以阻止气体流向斜面区域。 阴影环边缘处的几何特征将气体流引导到晶片，以便在遮蔽边缘的同时保持晶片的厚度均匀性。 在另一种方法中，衬底加热器/支撑件构造成将净化气体流动到被支撑的衬底的边缘。 这些吹扫气体可防止工艺气体到达衬底边缘并将材料沉积在斜面区域上。

公开(公告)号：US5959409A

公开(公告)日：1999-09-28

申请号：US910418

申请日：1997-08-13

申请人： Charles N. Dornfest ,  John M. White ,  Craig A. Bercaw ,  Hiroyuki Steven Tomosawa ,  Mark A. Fodor

发明人： Charles N. Dornfest ,  John M. White ,  Craig A. Bercaw ,  Hiroyuki Steven Tomosawa ,  Mark A. Fodor

IPC分类号： B01J19/00 ,  B01J19/08 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/30

CPC分类号： H01J37/32495 ,  H01J37/32559

摘要： Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures. The particular ceramic material used to provide the desired protection from the gaseous species generated by the plasma are selected from the group consisting of aluminum nitride, crystalline aluminum oxide, magnesium fluoride, and sintered aluminum oxide.

摘要翻译： 在等离子体处理室中的等离子体处理室（特别是加热的金属电极表面）中的金属表面提供非粘合陶瓷保护，以防止或抑制在材料加工期间在等离子体中产生的化学腐蚀物质对加热的金属表面的侵蚀 ，而不将陶瓷材料粘合到金属表面。 根据本发明，陶瓷保护材料包括薄的覆盖材料，该覆盖材料与加热的金属紧密地配合但不结合。 这种形式的陶瓷保护对于保护用于处理半导体衬底的等离子体处理室中的辉光放电电极和气体分配装置的表面特别有用，以形成集成电路结构。 用于提供由等离子体产生的气态物质所需保护的特定陶瓷材料选自氮化铝，结晶氧化铝，氟化镁和烧结氧化铝。