中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

17 records (took 0.014 seconds)

    Styrenic thermoplastics composition
    2.
    发明申请
    Styrenic thermoplastics composition 审中-公开
    苯乙烯热塑性组合物

    公开(公告)号：US20070027256A1

    公开(公告)日：2007-02-01

    申请号：US10567722

    申请日：2004-10-08

    Applicant: Dong-chul Kim ,  Chan-hong Lee ,  Sung-je Cha ,  Yun-kyoung Cho ,  Sung-tae Ahn

    Inventor： Dong-chul Kim ,  Chan-hong Lee ,  Sung-je Cha ,  Yun-kyoung Cho ,  Sung-tae Ahn

    IPC: C08L51/00

    CPC classification number: C08L51/04 ,  C08L25/06 ,  C08L2666/02

    Abstract: The present invention relates to an acrylic rubber-modified copolymer and the styrenic thermoplastics composition using the same. More particularly, the present invention relates to the styrenic thermoplastics composition having superior appearance and thermoformability, which is obtained by adding 0.5-20 parts by weight of an acrylic rubber-modified copolymer having a rubber particle size ranging from 800 to 6, 000 Åto 100 parts by weight of a resin of 10-50 parts by weight of a graft copolymer comprising rubber-modified styrene and 30-70 parts by weight of a copolymer comprising styrene.

    Abstract translation: 本发明涉及丙烯酸类橡胶改性共聚物和使用其的苯乙烯类热塑性塑料组合物。 更具体地说，本发明涉及具有优异外观和热成型性的苯乙烯类热塑性塑料组合物，其通过将0.5-20重量份橡胶粒度为800至6,000至约100的丙烯酸橡胶改性共聚物 重量份10-50重量份的包含橡胶改性苯乙烯的接枝共聚物和30-70重量份包含苯乙烯的共聚物的树脂。

    POLYCARBONATE RESIN COMPOSITION WITH EXCELLENT FLAME RETARDANCY
    3.
    发明申请
    POLYCARBONATE RESIN COMPOSITION WITH EXCELLENT FLAME RETARDANCY 有权
    具有优异阻燃性能的聚碳酸酯树脂组合物

    公开(公告)号：US20110124781A1

    公开(公告)日：2011-05-26

    申请号：US12919423

    申请日：2008-12-28

    Applicant: Seon Mo Son ,  Kyung Mo Park ,  Sung Tae Ahn ,  Yong Kim

    Inventor： Seon Mo Son ,  Kyung Mo Park ,  Sung Tae Ahn ,  Yong Kim

    IPC: C08K5/52

    CPC classification number: C08L69/00 ,  C08K5/42 ,  C08K5/521 ,  C08K5/523 ,  C08L25/12 ,  C08L27/18 ,  C08L33/12 ,  C08L2666/04

    Abstract: A polycarbonate resin composition is provided. The composition comprises (A) 50 to 90% by weight of a polycarbonate resin, (B) 5 to 30% by weight of a polymethyl methacrylate resin, (C) 5 to 20% by weight of a phosphate compound, (D) 0.01 to 2% by weight of a metal sulfonate as an organic salt, and (E) 0.05 to 2% by weight of a fluorinated olefin. The composition is highly flame retardant and scratch resistant.

    Abstract translation: 提供聚碳酸酯树脂组合物。 该组合物包含（A）50〜90重量％的聚碳酸酯树脂，（B）5〜30重量％的聚甲基丙烯酸甲酯树脂，（C）5〜20重量％的磷酸酯化合物，（D）0.01 至2重量％的作为有机盐的金属磺酸盐，和（E）0.05至2重量％的氟化烯烃。 该组合物具有高度阻燃和耐划伤性。

    Low power voltage reference circuit
    4.
    发明授权
    Low power voltage reference circuit 失效
    低功率电压参考电路

    公开(公告)号：US6160393A

    公开(公告)日：2000-12-12

    申请号：US418333

    申请日：1999-10-14

    Applicant: Sung-tae Ahn ,  Yong-jin Jeon

    Inventor： Sung-tae Ahn ,  Yong-jin Jeon

    IPC: G05F3/24 ,  G05F3/20 ,  G05F3/26 ,  G05F3/16

    CPC classification number: G05F3/262

    Abstract: A bandgap voltage reference circuit according to the present invention generates a constant reference voltage and is not affected by variations in a power supply voltage and in a manufacturing process. In the bandgap voltage reference circuit, a constant voltage supply unit supplies a constant voltage, a first current mirror mirrors a first current flowing through the constant voltage supply unit to generate a second current, and a second current mirror controlled by the constant voltage from the constant voltage supply unit mirrors the second current to generate a third current and outputs the third current to an output node. A voltage reference unit is connected to the output node to provide a reference voltage to the output node. The voltage reference unit includes at least one PMOS transistor and at least one NMOS transistor which are connected to each other in series or in parallel. Ion implantation processes for determining threshold voltages of the PMOS transistor and the NMOS transistor are simultaneously performed.

    Abstract translation: 根据本发明的带隙电压参考电路产生恒定的参考电压，并且不受电源电压的变化和制造过程的影响。 在带隙电压基准电路中，恒定电压供给单元提供恒定电压，第一电流镜反射流过恒压电源单元的第一电流以产生第二电流，以及由来自所述恒定电压的恒定电压控制的第二电流镜 恒压电源单元镜像第二电流以产生第三电流，并将第三电流输出到输出节点。 电压参考单元连接到输出节点以向输出节点提供参考电压。 电压参考单元包括至少一个PMOS晶体管和至少一个NMOS晶体管，它们彼此串联或并联连接。 同时执行用于确定PMOS晶体管和NMOS晶体管的阈值电压的离子注入工艺。

    Device isolation method in integrated circuits
    5.
    发明授权
    Device isolation method in integrated circuits 失效
    集成电路中的器件隔离方法

    公开(公告)号：US5567645A

    公开(公告)日：1996-10-22

    申请号：US231705

    申请日：1994-04-22

    Applicant: Sung-tae Ahn ,  Tai-su Park

    Inventor： Sung-tae Ahn ,  Tai-su Park

    IPC: H01L21/76 ,  H01L21/316 ,  H01L21/762

    CPC classification number: H01L21/76202

    Abstract: An improved method for performing a local oxidation of silicon (LOCOS) capable of forming a sufficient thickness of a field oxide film even in narrow isolation regions. After defining the isolation region, a first field oxide film is formed in the isolation region by means of a first field oxidation. A film formed of HTO, LTO or SOG, or a pre-oxide film formed of polysilicon is formed on the resultant product. Then, the film, oxide film or the pre-oxide film is removed by anisotropically etching with a dry etching process or a chemical mechanical process so as to be left only in the isolation region, which after a second field oxidation forms a second field oxide film. According to the present invention, the problems associated with the field oxide film thinning effect usually associated with the conventional LOCOS-series isolation method can be overcome by either making the isolation structure in narrow isolation regions have a total thickness which is equal to that in the wide isolation regions, or by making the former thicker than the latter.

    Abstract translation: 即使在狭窄的隔离区域中能够形成足够厚度的场氧化物膜的硅（LOCOS）的局部氧化的改进方法。 在限定隔离区之后，通过第一场氧化在隔离区中形成第一场氧化物膜。 在所得产物上形成由HTO，LTO或SOG形成的膜或由多晶硅形成的预氧化物膜。 然后，通过用干蚀刻工艺或化学机械工艺进行各向异性蚀刻除去膜，氧化膜或预氧化物膜，以便仅留在隔离区域中，其在第二场氧化后形成第二场氧化物 电影。 根据本发明，通常与常规LOCOS系列隔离方法相关的场氧化膜薄化效应相关的问题可以通过使狭窄隔离区域中的隔离结构的总厚度等于 或者通过使前者比后者更厚。

    Chemical resistant thermoplastic resin composition
    7.
    发明授权
    Chemical resistant thermoplastic resin composition 有权
    耐化学性热塑性树脂组合物

    公开(公告)号：US07396877B2

    公开(公告)日：2008-07-08

    申请号：US11248527

    申请日：2005-10-12

    Applicant: Sung-je Cha ,  Sung-tae Ahn ,  Dong-chul Kim ,  Yun-kyoung Cho

    Inventor： Sung-je Cha ,  Sung-tae Ahn ,  Dong-chul Kim ,  Yun-kyoung Cho

    IPC: C08L51/04

    CPC classification number: C08L25/12 ,  C08L23/08 ,  C08L33/06 ,  C08L55/02 ,  C08L2666/24 ,  C08L2666/02

    Abstract: Disclosed is a resin composition comprising (A) 100 parts by weight of a base resin comprising a rubber-modified styrene-containing graft copolymer and a styrene-containing copolymer; (B) 0.5-8 parts by weight of an acrylic rubber graft copolymer resin having an average particle size of 0.1-0.5 μm; and (C) 0.5-8 parts by weight of a graft copolymer resin comprising an ethylene α-olefinic copolymer rubber having an average particle size of 0.1-0.8 μm. The thermoplastic resin composition of the present invention greatly improves chemical resistance to insulating materials, such as urethane foam, or foaming agent compounds, such as freon (CFC-11, HCFC-141b, HFC-245fa, HFC-245eb, HFC-245ca, HFC-356mffm) and cyclopentane and offers superior impact strength, whiteness and processability. It can be useful for extrusion sheets of refrigerator interiors.

    Abstract translation: 公开了一种树脂组合物，其包含（A）100重量份的包含橡胶改性的含苯乙烯的接枝共聚物和含苯乙烯的共聚物的基础树脂; （B）0.5-8重量份平均粒径为0.1-0.5μm的丙烯酸橡胶接枝共聚物树脂; 和（C）0.5-8重量份的包含平均粒径为0.1-0.8μm的乙烯α-烯烃共聚物橡胶的接枝共聚物树脂。 本发明的热塑性树脂组合物大大提高了对聚氨酯泡沫等绝缘材料的耐化学性，或氟利昂（CFC-11，HCFC-141b，HFC-245fa，HFC-245eb，HFC-245ca， HFC-356mffm）和环戊烷，具有优异的冲击强度，白度和加工性能。 它可用于冰箱内部的挤出片材。

    Manufacturing method for a semiconductor isolation region
    9.
    发明授权
    Manufacturing method for a semiconductor isolation region 失效
    半导体隔离区域的制造方法

    公开(公告)号：US5360753A

    公开(公告)日：1994-11-01

    申请号：US127155

    申请日：1993-09-27

    Applicant: Tai-seo Park ,  Yun-gi Kim ,  Dong-chul Park ,  Sung-tae Ahn ,  Byeong-yeol Kim

    Inventor： Tai-seo Park ,  Yun-gi Kim ,  Dong-chul Park ,  Sung-tae Ahn ,  Byeong-yeol Kim

    IPC: H01L21/762 ,  H01L21/763 ,  H01L21/76

    CPC classification number: H01L21/76235 ,  H01L21/76202 ,  H01L21/7621 ,  H01L21/76221 ,  H01L21/763

    Abstract: In an element isolation method of a semiconductor device which can form an element isolation region having a flat surface without regard to the width of the element isolation region, and whose width is below the resolution limit, an insulating film having an aperture in order to define the element isolation region is formed on the semiconductor wafer, wherein an oxidizable material layer is deposited and then first spacers are formed on the sidewalls of the aperture. Then, a thermal oxide film is formed over the entire semiconductor wafer, excluding a first-spacer-formed region, and the first spacer is removed. The wafer surface is exposed to the lower part of the removed first spacer region, and then the portion of the semiconductor wafer below the exposed region is etched to thereby form a trench. After that, an element isolation region is formed by filling up the trench and removing the insulating film around tile trench. Additionally, a second spacer is formed on the sidewalls of the first spacer so as to further reduce the element isolation region. Accordingly, a highly integrated semiconductor device can be accomplished by forming an element isolation region whose size is below the resolution limit and whereby good element isolation characteristics are provided.

    Abstract translation: 在能够形成具有平坦表面的元件隔离区域而不考虑元件隔离区域的宽度并且其宽度低于分辨率极限的半导体器件的元件隔离方法中，具有孔径的绝缘膜以便限定 元件隔离区形成在半导体晶片上，其中沉积可氧化材料层，然后在孔的侧壁上形成第一间隔物。 然后，除了第一间隔物形成区域之外，在整个半导体晶片上形成热氧化膜，并且去除第一间隔物。 将晶片表面暴露于去除的第一间隔区域的下部，然后蚀刻暴露区域下方的半导体晶片的部分，从而形成沟槽。 之后，通过填充沟槽并去除瓷砖沟槽周围的绝缘膜来形成元件隔离区域。 此外，在第一间隔件的侧壁上形成第二间隔件，以进一步减小元件隔离区域。 因此，可以通过形成尺寸低于分辨率极限的元件隔离区域并由此提供良好的元件隔离特性来实现高度集成的半导体器件。

Patent Agency Ranking