公开(公告)号：US20240291234A1

公开(公告)日：2024-08-29

申请号：US18572645

申请日：2023-05-29

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Jun WANG ,  Wuling LIU ,  Shaoyang TAN ,  Bangguo WANG ,  Wu ZHAO ,  Xinsheng LIAO

IPC: H01S5/042 ,  H01S5/024

CPC classification number: H01S5/04254 ,  H01S5/02476

Abstract: The present invention discloses a lateral-optical-mode-controlled high-power semiconductor device, a manufacturing method thereof and a semiconductor packaging structure. The lateral-optical-mode-controlled high-power semiconductor device comprises a semiconductor substrate layer; an active layer arranged upon the semiconductor substrate layer; a front electrode layer arranged on a side of the active layer away from the semiconductor substrate layer, the front electrode layer including an electrode injection region; wherein thickness of the electrode injection region decreases progressively from a central part of the electrode injection region to an edge part of the electrode injection region along a slow axis direction of the lateral-optical-mode-controlled high-power semiconductor device. The semiconductor device has high light-output brightness, high beam quality, as well as low cost and high degree of integration.

公开(公告)号：US20240327980A1

公开(公告)日：2024-10-03

申请号：US17924293

申请日：2022-07-20

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Yang CHENG ,  Jun WANG ,  Xiao XIAO ,  Yintao GUO

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/52 ,  H01L21/02

CPC classification number: C23C16/45512 ,  C23C16/301 ,  C23C16/45561 ,  C23C16/45587 ,  C23C16/52 ,  H01L21/02546 ,  H01L21/0262

Abstract: The present application provides a method for a manufacturing semiconductor structure and a semiconductor growth device. The semiconductor growth device includes: a reaction chamber; a growth main pipe, where an end of the growth main pipe is connected to the reaction chamber; a vent main pipe; a first mixing main pipe to an Mth mixing main pipe, where M is an integer greater than or equal to 1; a first reaction gas source group to an Nth reaction gas source group, where N is an integer greater than or equal to 2; a first switching valve group to an Nth switching valve group, where a kth switching valve group is adapted for controlling transport of gas from a kth reaction gas source group to a jth mixing main pipe, k is an integer greater than or equal to 1 and less than or equal to N, and j is an integer greater than or equal to 1 and less than or equal to M; and a first growth vent switching valve to an Mth growth vent switching valve, where a jth growth vent switching valve is adapted for switching the gas in the jth mixing main pipe to be transported to the growth main pipe or the vent main pipe. The use of the semiconductor growth device helps to improve the steepness of an interface in a growth process of a semiconductor structure.

公开(公告)号：US11646548B2

公开(公告)日：2023-05-09

申请号：US17762887

申请日：2021-05-24

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Jun Wang ,  Yao Xiao ,  Shaoyang Tan ,  Heng Liu ,  Quanling Li

IPC: H01S5/183 ,  H01S5/028 ,  H01S5/34

CPC classification number: H01S5/18397 ,  H01S5/028 ,  H01S5/3416

Abstract: The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains. The barrier layer connection does not have the property of introducing a new pn junction, so the layer will not increase the turn-on voltage for device operation, and meanwhile the epitaxial growth is much simpler than that of the tunnel junction.

公开(公告)号：US20240332910A1

公开(公告)日：2024-10-03

申请号：US18572689

申请日：2023-05-29

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Jun WANG ,  Shaoyang TAN ,  Li ZHOU ,  Yang CHENG ,  Xiao XIAO ,  Yintao GUO ,  Hao YU ,  Quanling LI ,  Xinsheng LIAO ,  Dayong MIN

IPC: H01S5/34 ,  H01S5/343

CPC classification number: H01S5/3403 ,  H01S5/3407 ,  H01S5/3434 ,  H01S5/34353 ,  H01S5/3436

Abstract: A high-efficiency active layer includes a strained quantum well layer and, at one side thereof, a first strained barrier layer configured to transport electrons. The first strained barrier layer and the strained quantum well layers are configured to form strain compensation. A second barrier layer is positioned on the other side of the strained quantum well layer and is configured to transport holes. A band offset between conduction bands of the first strained barrier layer and of the strained quantum well layer is less than a band offset between valence bands of the strained quantum well layer and of the first strained barrier layer. A band offset between valence bands of the strained quantum well layer and of the second barrier layer is less than a band offset between conduction bands of the second barrier layer and of the strained quantum well layer. Light-emitting efficiency and reliability are improved.

公开(公告)号：US20220344904A1

公开(公告)日：2022-10-27

申请号：US17762887

申请日：2021-05-24

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Jun WANG ,  Yao XIAO ,  Shaoyang TAN ,  Heng LIU ,  Quanling LI

IPC: H01S5/183 ,  H01S5/34 ,  H01S5/028

Abstract: The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains. The barrier layer connection does not have the property of introducing a new pn junction, so the layer will not increase the turn-on voltage for device operation, and meanwhile the epitaxial growth is much simpler than that of the tunnel junction.

公开(公告)号：US20240222939A1

公开(公告)日：2024-07-04

申请号：US17924311

申请日：2022-07-20

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Jun WANG ,  Shaoyang TAN ,  Li ZHOU ,  Bangguo WANG ,  Yintao GUO ,  Xinsheng LIAO ,  Quanling LI

IPC: H01S5/20 ,  H01S5/343

CPC classification number: H01S5/2018 ,  H01S5/3434 ,  H01S5/34353

Abstract: A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a semiconductor substrate layer; an N-type waveguide structure arranged on the semiconductor substrate layer; and an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer. The N-type waveguide structure includes a first N-type waveguide layer and a second N-type waveguide layer that are stacked. The second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer. A conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer. A valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer. The semiconductor structure increases light emitting efficiency.

公开(公告)号：US20240222931A1

公开(公告)日：2024-07-04

申请号：US17924291

申请日：2022-07-20

Applicant: Suzhou Everbright Photonics Co., Ltd.

Inventor： Jun WANG ,  Shaoyang Tan ,  Lichen Zhang ,  Yiwen Hu ,  Wu Zhao ,  Bo Li ,  Quanling Li

IPC: H01S5/042 ,  H01S5/02 ,  H01S5/16 ,  H01S5/20

CPC classification number: H01S5/0421 ,  H01S5/0202 ,  H01S5/168 ,  H01S5/2018 ,  H01S5/2086

Abstract: A high-reliability low-defect semiconductor light-emitting device and a method for manufacturing same. The high-reliability low-defect semiconductor light-emitting device includes: a semiconductor substrate layer; an active layer arranged on the semiconductor substrate layer; a doped semiconductor contact layer arranged on a side of the active layer away from the semiconductor substrate layer, where the doped semiconductor contact layer includes a first area and an edge area surrounding the first area; a protection layer arranged on a side of the edge area of the doped semiconductor contact layer away from the active layer; and a front electrode layer, arranged on a side of the first area away from the active layer, where an upper surface of the front electrode layer in the first area is lower than an upper surface of the protection layer. The semiconductor light-emitting device has both high reliability and reduced process control costs.

公开(公告)号：US20240218559A1

公开(公告)日：2024-07-04

申请号：US17924306

申请日：2022-07-20

Applicant: Suzhou Everbright Photonics Co., Ltd. ,  Everbright Institute of Semiconductor Photonics Co., Ltd.

Inventor： Jun WANG ,  Yang Cheng ,  Xiao Xiao ,  Yintao Guo ,  Yudan Cuo

IPC: C30B25/14 ,  C30B25/10 ,  C30B29/40

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present application provides a semiconductor growth device and an operation method thereof. The semiconductor growth device includes: a reaction chamber; a heating base arranged in the reaction chamber, where the heating base includes a first heating area and a second heating area arranged around a periphery of the first heating area, a heating temperature of the first heating area is greater than a heating temperature of the second heating area, and a surface of the second heating area is adapted for placing a substrate; and a first spray unit and a second spray unit arranged at a top of the reaction chamber, where the first spray unit is arranged above the first heating area, and the second spray unit is arranged above the second heating area, where the first spray unit includes at least a first pipe, the first pipe is adapted for introducing a first gas source, the second spray unit includes at least a second pipe, the second pipe is adapted for introducing a second gas source, and a decomposition temperature of the first gas source is greater than a decomposition temperature of the second gas source. The optimal growth temperature range of the semiconductor growth device is reduced, and the use range of the device is expanded.

公开(公告)号：US20240222930A1

公开(公告)日：2024-07-04

申请号：US17924290

申请日：2022-07-27

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Yao XIAO ,  Jun WANG ,  Pei MIAO ,  Heng LIU ,  Quanling LI ,  Xinsheng LIAO ,  Dayong MIN

IPC: H01S5/026 ,  H01S5/183

CPC classification number: H01S5/026 ,  H01S5/183

Abstract: A high-brightness high-power semiconductor light-emitting device and a method for manufacturing same. The high-brightness high-power semiconductor light-emitting device includes: a semiconductor substrate layer; a modulation structure arranged on the semiconductor substrate layer, where the modulation structure includes: a carrier modulation active layer; a modulation tunnel junction arranged on a side of the carrier modulation active layer away from the semiconductor substrate layer; and a cavity extension layer arranged on a side of the modulation tunnel junction away from the carrier modulation active layer; a first active layer arranged on a side of the modulation structure away from the semiconductor substrate layer, where a carrier concentration in the carrier modulation active layer is less than a carrier concentration in the first active layer; and a first current-limiting layer arranged on a side of the first active layer away from the modulation structure. The high-brightness high-power semiconductor light-emitting device can have a high level of integration, high reliability, and low costs while implementing high brightness and high power.

公开(公告)号：US11631966B2

公开(公告)日：2023-04-18

申请号：US17622964

申请日：2020-05-29

Applicant: Suzhou Everbright Photonics Co., Ltd. ,  Everbright Institute of Semiconductor Photonics Co., Ltd.

Inventor： Hao Yu ,  Shujuan Sun ,  Jun Wang ,  Huadong Pan ,  Dayong Min

IPC: H01S5/14 ,  H01S5/065 ,  H01S5/02251 ,  H01S5/024 ,  H01S5/40

Abstract: A beam combining device and method for a Bragg grating external-cavity laser module has a plurality of side by side light-emitting modules that use a Bragg grating to perform wavelength locking. Output light of the modules is incident to a beam combining element after passing through a focusing optical element for beam combining, and light subjected to beam combining is reflected partially and transmitted partially under the effect of a light splitting element. A part is incident into a dispersion element at a diffraction angle of the element. Parallel light is formed under the effect of a conversion optical element. Spots of the light beams of corresponding wavelengths of the light-emitting modules are formed on an image acquisition mechanism. Whether the wavelengths of the corresponding light-emitting modules are locked is determined by whether there is a deviation between preset spots and spots formed by the module on the acquisition mechanism.