公开(公告)号：US20110186982A1

公开(公告)日：2011-08-04

申请号：US13016239

申请日：2011-01-28

申请人： Tomoyuki KITANI ,  Akira TOJO ,  Takao NOGI ,  Kazuhito HIGUCHI ,  Tomohiro IGUCHI ,  Masako FUKUMITSU ,  Susumu OBATA ,  Yusaku ASANO

发明人： Tomoyuki KITANI ,  Akira TOJO ,  Takao NOGI ,  Kazuhito HIGUCHI ,  Tomohiro IGUCHI ,  Masako FUKUMITSU ,  Susumu OBATA ,  Yusaku ASANO

IPC分类号： H01L23/48 ,  H01L21/782

CPC分类号： H01L21/782 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a surface mount diode including a diode chip including a first main surface and a second main surface, a cathode electrode including a first internal electrode portion on the first main surface and a first external electrode portion on the first internal electrode portion, an anode electrode including a second internal electrode portion on the second main surface and a second external electrode portion on the second internal electrode portion, a thickness of the second external electrode portion being the same as a thickness of the first external electrode portion, a first covering member covering a periphery surface of one of the internal electrode portions and a periphery surface of the diode chip, and a second covering member covering a periphery surface of the other of the internal electrode portions, the second covering member being different in color from the first covering member.

摘要翻译： 根据一个实施例，一种表面贴装二极管，其包括具有第一主表面和第二主表面的二极管芯片，在第一主表面上包括第一内部电极部分的第一内部电极部分和第一内部电极部分上的第一外部电极部分 包括第二主表面上的第二内部电极部分和第二内部电极部分上的第二外部电极部分的阳极电极，第二外部电极部分的厚度与第一外部电极部分的厚度相同， 覆盖所述内部电极部分中的一个的周边表面和所述二极管芯片的外围表面的第一覆盖部件和覆盖所述另一个所述内部电极部分的周边表面的第二覆盖部件，所述第二覆盖部件的颜色不同于 第一个覆盖成员。

公开(公告)号：US20130078766A1

公开(公告)日：2013-03-28

申请号：US13676696

申请日：2012-11-14

申请人： Takao NOGI ,  Tomoyuki KITANI ,  Akira TOJO ,  Kentaro SUGA

发明人： Takao NOGI ,  Tomoyuki KITANI ,  Akira TOJO ,  Kentaro SUGA

IPC分类号： H01L21/78

CPC分类号： H01L23/051 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; and forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在形成于半导体晶片的多个半导体装置的半导体晶片顶面侧的各电极上形成由导体构成的突起， 在所述多个半导体器件之间的顶面中形成沟槽; 将绝缘体填充到突起之间的间隙中并进入沟槽中以形成密封构件; 研磨与顶面相对的半导体晶片的底面，直到暴露出密封构件，以将半导体晶片分成每个半导体器件; 在每个突起上形成由导体制成的第一引线，所述第一引线形成第一外部电极的一部分; 以及直接形成导电材料层以在所述多个半导体器件的底面上形成第二引线。

公开(公告)号：US20100233856A1

公开(公告)日：2010-09-16

申请号：US12694534

申请日：2010-01-27

申请人： Takao NOGI ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

发明人： Takao NOGI ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

IPC分类号： H01L21/78

CPC分类号： H01L23/051 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separate the plurality of semiconductor devices from each other.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在形成于半导体晶片的多个半导体装置的半导体晶片顶面侧的各电极上形成由导体构成的突起， 在所述多个半导体器件之间的顶面中形成沟槽; 将绝缘体填充到突起之间的间隙中并进入沟槽中以形成密封构件; 研磨与顶面相对的半导体晶片的底面，直到暴露出密封构件，以将半导体晶片分成每个半导体器件; 在每个突起上形成由导体制成的第一引线，所述第一引线形成第一外部电极的一部分; 直接形成导电材料层以在所述多个半导体器件的底面上形成第二引线，所述第二引线形成所述第二外部电极; 以及切割所述多个半导体器件之间的所述密封构件以将所述多个半导体器件彼此分离。

公开(公告)号：US20110121463A1

公开(公告)日：2011-05-26

申请号：US12880053

申请日：2010-09-10

申请人： John Clarimer Vicente CONCEPCION ,  Takao Nogi

发明人： John Clarimer Vicente CONCEPCION ,  Takao Nogi

IPC分类号： H01L23/48 ,  H01L21/58

CPC分类号： H01L24/27 ,  H01L21/6835 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/82 ,  H01L24/83 ,  H01L2224/24227 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/85205 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/13091 ,  H01L2924/15156 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to one embodiment, a semiconductor package is disclosed. The semiconductor package can include an insulative substrate having a first surface and a second surface opposed to the first surface, a first through hole formed in the insulative substrate from the first surface to the second surface, and a second through hole formed near the first through hole in the insulative substrate from the first surface to the second surface, a conductive body formed in the vicinity of the second through hole and penetrating into the insulative substrate, a first outer electrode formed on the first surface and connected to an one end of the conductive body, and a second outer electrode formed on the second surface and connected to the other end of the conductive body.

摘要翻译： 根据一个实施例，公开了半导体封装。 半导体封装可以包括具有第一表面和与第一表面相对的第二表面的绝缘衬底，形成在绝缘衬底中的从第一表面到第二表面的第一通孔，以及形成在第一通孔 在所述绝缘基板上从所述第一表面到所述第二表面的孔，形成在所述第二通孔附近并且穿透到所述绝缘基板中的导电体，形成在所述第一表面上并连接到所述第二通孔的一端的第一外部电极 导电体和形成在第二表面上并连接到导电体的另一端的第二外电极。

公开(公告)号：US07888180B2

公开(公告)日：2011-02-15

申请号：US12130110

申请日：2008-05-30

申请人： Takao Nogi ,  Kentaro Suga

发明人： Takao Nogi ,  Kentaro Suga

IPC分类号： H01L21/78

CPC分类号： H01L23/051 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/27 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2518 ,  H01L2224/274 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor apparatus includes a semiconductor device having electrodes on its opposed frontside and backside, respectively, a first external electrode connected to the electrode at the frontside, the first external electrode having a first major surface generally parallel to the frontside of the semiconductor device, and a first side surface generally perpendicular to the first major surface, and a second external electrode having a second major surface generally parallel to the backside of the semiconductor device, a second side surface generally perpendicular to the second major surface, and a projection protruding perpendicular to the second major surface and connected to the electrode at the backside, The first side surface of the first external electrode and the second side surface of the second external electrode serve as mount surfaces. The semiconductor device is located between the first external electrode and the second external electrode.

摘要翻译： 半导体装置包括分别在其前侧和后侧具有电极的半导体器件，在前侧连接到电极的第一外部电极，第一外部电极具有大致平行于半导体器件的前侧的第一主表面，以及 大致垂直于第一主表面的第一侧表面和第二外部电极，其具有大致平行于半导体器件的背面的第二主表面，大体上垂直于第二主表面的第二侧表面，以及垂直于 第二主表面并且在背面连接到电极。第一外部电极的第一侧表面和第二外部电极的第二侧表面用作安装表面。 半导体器件位于第一外部电极和第二外部电极之间。

公开(公告)号：US20080296760A1

公开(公告)日：2008-12-04

申请号：US12130110

申请日：2008-05-30

申请人： Takao NOGI ,  Kentaro Suga

发明人： Takao NOGI ,  Kentaro Suga

IPC分类号： H01L23/48 ,  H01L21/304

CPC分类号： H01L23/051 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/27 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2518 ,  H01L2224/274 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor apparatus includes a semiconductor device having electrodes on its opposed frontside and backside, respectively, a first external electrode connected to the electrode at the frontside, the first external electrode having a first major surface generally parallel to the frontside of the semiconductor device, and a first side surface generally perpendicular to the first major surface, and a second external electrode having a second major surface generally parallel to the backside of the semiconductor device, a second side surface generally perpendicular to the second major surface, and a projection protruding perpendicular to the second major surface and connected to the electrode at the backside, The first side surface of the first external electrode and the second side surface of the second external electrode serve as mount surfaces. The semiconductor device is located between the first external electrode and the second external electrode.

摘要翻译： 半导体装置包括分别在其前侧和后侧具有电极的半导体器件，在前侧连接到电极的第一外部电极，第一外部电极具有大致平行于半导体器件的前侧的第一主表面，以及 大致垂直于第一主表面的第一侧表面和第二外部电极，其具有大致平行于半导体器件的背面的第二主表面，大体上垂直于第二主表面的第二侧表面，以及垂直于 第二主表面并且在背面连接到电极。第一外部电极的第一侧表面和第二外部电极的第二侧表面用作安装表面。 半导体器件位于第一外部电极和第二外部电极之间。

公开(公告)号：US08334173B2

公开(公告)日：2012-12-18

申请号：US12694534

申请日：2010-01-27

申请人： Takao Nogi ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

发明人： Takao Nogi ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

IPC分类号： H01L21/00

CPC分类号： H01L23/051 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separate the plurality of semiconductor devices from each other.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在形成于半导体晶片的多个半导体装置的半导体晶片顶面侧的各电极上形成由导体构成的突起， 在所述多个半导体器件之间的顶面中形成沟槽; 将绝缘体填充到突起之间的间隙中并进入沟槽中以形成密封构件; 研磨与顶面相对的半导体晶片的底面，直到暴露出密封构件，以将半导体晶片分成每个半导体器件; 在每个突起上形成由导体制成的第一引线，所述第一引线形成第一外部电极的一部分; 直接形成导电材料层以在所述多个半导体器件的底面上形成第二引线，所述第二引线形成所述第二外部电极; 以及切割所述多个半导体器件之间的所述密封构件以将所述多个半导体器件彼此分离。