公开(公告)号：US08334173B2

公开(公告)日：2012-12-18

申请号：US12694534

申请日：2010-01-27

申请人： Takao Nogi ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

发明人： Takao Nogi ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

IPC分类号： H01L21/00

CPC分类号： H01L23/051 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separate the plurality of semiconductor devices from each other.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在形成于半导体晶片的多个半导体装置的半导体晶片顶面侧的各电极上形成由导体构成的突起， 在所述多个半导体器件之间的顶面中形成沟槽; 将绝缘体填充到突起之间的间隙中并进入沟槽中以形成密封构件; 研磨与顶面相对的半导体晶片的底面，直到暴露出密封构件，以将半导体晶片分成每个半导体器件; 在每个突起上形成由导体制成的第一引线，所述第一引线形成第一外部电极的一部分; 直接形成导电材料层以在所述多个半导体器件的底面上形成第二引线，所述第二引线形成所述第二外部电极; 以及切割所述多个半导体器件之间的所述密封构件以将所述多个半导体器件彼此分离。

公开(公告)号：US07888180B2

公开(公告)日：2011-02-15

申请号：US12130110

申请日：2008-05-30

申请人： Takao Nogi ,  Kentaro Suga

发明人： Takao Nogi ,  Kentaro Suga

IPC分类号： H01L21/78

CPC分类号： H01L23/051 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/27 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2518 ,  H01L2224/274 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor apparatus includes a semiconductor device having electrodes on its opposed frontside and backside, respectively, a first external electrode connected to the electrode at the frontside, the first external electrode having a first major surface generally parallel to the frontside of the semiconductor device, and a first side surface generally perpendicular to the first major surface, and a second external electrode having a second major surface generally parallel to the backside of the semiconductor device, a second side surface generally perpendicular to the second major surface, and a projection protruding perpendicular to the second major surface and connected to the electrode at the backside, The first side surface of the first external electrode and the second side surface of the second external electrode serve as mount surfaces. The semiconductor device is located between the first external electrode and the second external electrode.

摘要翻译： 半导体装置包括分别在其前侧和后侧具有电极的半导体器件，在前侧连接到电极的第一外部电极，第一外部电极具有大致平行于半导体器件的前侧的第一主表面，以及 大致垂直于第一主表面的第一侧表面和第二外部电极，其具有大致平行于半导体器件的背面的第二主表面，大体上垂直于第二主表面的第二侧表面，以及垂直于 第二主表面并且在背面连接到电极。第一外部电极的第一侧表面和第二外部电极的第二侧表面用作安装表面。 半导体器件位于第一外部电极和第二外部电极之间。

公开(公告)号：US20080296760A1

公开(公告)日：2008-12-04

申请号：US12130110

申请日：2008-05-30

申请人： Takao NOGI ,  Kentaro Suga

发明人： Takao NOGI ,  Kentaro Suga

IPC分类号： H01L23/48 ,  H01L21/304

CPC分类号： H01L23/051 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/27 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2518 ,  H01L2224/274 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor apparatus includes a semiconductor device having electrodes on its opposed frontside and backside, respectively, a first external electrode connected to the electrode at the frontside, the first external electrode having a first major surface generally parallel to the frontside of the semiconductor device, and a first side surface generally perpendicular to the first major surface, and a second external electrode having a second major surface generally parallel to the backside of the semiconductor device, a second side surface generally perpendicular to the second major surface, and a projection protruding perpendicular to the second major surface and connected to the electrode at the backside, The first side surface of the first external electrode and the second side surface of the second external electrode serve as mount surfaces. The semiconductor device is located between the first external electrode and the second external electrode.

摘要翻译： 半导体装置包括分别在其前侧和后侧具有电极的半导体器件，在前侧连接到电极的第一外部电极，第一外部电极具有大致平行于半导体器件的前侧的第一主表面，以及 大致垂直于第一主表面的第一侧表面和第二外部电极，其具有大致平行于半导体器件的背面的第二主表面，大体上垂直于第二主表面的第二侧表面，以及垂直于 第二主表面并且在背面连接到电极。第一外部电极的第一侧表面和第二外部电极的第二侧表面用作安装表面。 半导体器件位于第一外部电极和第二外部电极之间。

公开(公告)号：US20100233856A1

公开(公告)日：2010-09-16

申请号：US12694534

申请日：2010-01-27

申请人： Takao NOGI ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

发明人： Takao NOGI ,  Tomoyuki Kitani ,  Akira Tojo ,  Kentaro Suga

IPC分类号： H01L21/78

CPC分类号： H01L23/051 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separate the plurality of semiconductor devices from each other.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在形成于半导体晶片的多个半导体装置的半导体晶片顶面侧的各电极上形成由导体构成的突起， 在所述多个半导体器件之间的顶面中形成沟槽; 将绝缘体填充到突起之间的间隙中并进入沟槽中以形成密封构件; 研磨与顶面相对的半导体晶片的底面，直到暴露出密封构件，以将半导体晶片分成每个半导体器件; 在每个突起上形成由导体制成的第一引线，所述第一引线形成第一外部电极的一部分; 直接形成导电材料层以在所述多个半导体器件的底面上形成第二引线，所述第二引线形成所述第二外部电极; 以及切割所述多个半导体器件之间的所述密封构件以将所述多个半导体器件彼此分离。

公开(公告)号：US07205239B2

公开(公告)日：2007-04-17

申请号：US11203097

申请日：2005-08-15

申请人： Tomohiro Iguchi ,  Kentaro Suga ,  Taizo Tomioka

发明人： Tomohiro Iguchi ,  Kentaro Suga ,  Taizo Tomioka

IPC分类号： H01L21/302

CPC分类号： H01L21/304 ,  H01L21/30604 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/73204 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： According to a method of manufacturing a semiconductor wafer and a semiconductor device, a rear surface of the semiconductor wafer is ground, and is dry- or wet-etched so that rear surfaces of semiconductor chips on the segmented semiconductor wafer have substantially equal surface roughness. The semiconductor chips are bonded onto a lead frame via bumps using thermo-compression and ultrasonic vibrations.

摘要翻译： 根据制造半导体晶片和半导体器件的方法，对半导体晶片的后表面进行研磨，并进行干蚀刻或湿蚀刻，使得分割的半导体晶片上的半导体芯片的后表面具有基本上相等的表面粗糙度。 半导体芯片通过使用热压缩和超声波振动的凸块接合到引线框架上。

公开(公告)号：US08653651B2

公开(公告)日：2014-02-18

申请号：US13405665

申请日：2012-02-27

申请人： Masayuki Uchida ,  Takashi Togasaki ,  Satoru Hara ,  Kentaro Suga

发明人： Masayuki Uchida ,  Takashi Togasaki ,  Satoru Hara ,  Kentaro Suga

IPC分类号： H01L23/34

CPC分类号： H01L23/367 ,  H01L23/42 ,  H01L23/492 ,  H01L24/26 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/26165 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/8314 ,  H01L2224/83815 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor apparatus includes a semiconductor device, a heat spreader, a regulating unit, a containing unit, and a holding unit. The heat spreader is bonded to the semiconductor device with an interposed solder layer. The regulating unit is configured to regulate a dimension between the semiconductor device and the heat spreader. The containing unit is configured to contain melted solder in an interior of the containing unit. The holding unit is configured to allow melted solder held in an interior of the holding unit. The holding unit is configured to replenish the melted solder in the case where an amount of the melted solder contained in the containing unit is insufficient. The holding unit is configured to recover the melted solder in the case where the amount of the melted solder contained in the containing unit is excessive.

摘要翻译： 根据一个实施例，半导体装置包括半导体器件，散热器，调节单元，容纳单元和保持单元。 散热器通过插入的焊料层与半导体器件接合。 调节单元构造成调节半导体器件和散热器之间的尺寸。 容纳单元构造成在容纳单元的内部容纳熔融的焊料。 保持单元被配置为允许保持在保持单元的内部的熔融焊料。 保持单元构造为在容纳单元中所含的熔融焊料的量不足的情况下补充熔融的焊料。 保持单元被配置为在容纳单元中包含的熔融焊料的量过多的情况下回收熔融的焊料。

公开(公告)号：US20060032834A1

公开(公告)日：2006-02-16

申请号：US11203097

申请日：2005-08-15

申请人： Tomohiro Iguchi ,  Kentaro Suga ,  Taizo Tomioka

发明人： Tomohiro Iguchi ,  Kentaro Suga ,  Taizo Tomioka

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： H01L21/304 ,  H01L21/30604 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/73204 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： According to a method of manufacturing a semiconductor wafer and a semiconductor device, a rear surface of the semiconductor wafer is ground, and is dry—or wet—etched so that rear surfaces of semiconductor chips on the segmented semiconductor wafer have substantially equal surface roughness. The semiconductor chips are bonded onto a lead frame via bumps using thermo-compression and ultrasonic vibrations.

摘要翻译： 根据制造半导体晶片和半导体器件的方法，对半导体晶片的后表面进行研磨，并进行干蚀刻或湿蚀刻，使得分割的半导体晶片上的半导体芯片的后表面具有基本上相等的表面粗糙度。 半导体芯片通过使用热压缩和超声波振动的凸块接合到引线框架上。