摘要:
A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).
摘要:
A PLL comprises a current-controlled oscillator (18) for generating an output clock signal based on a current signal generated based on a phase difference between a reference clock signal and a feedback clock signal, a current source (28), and an initialization switch (26) for performing an open/close operation based on the initialization signal, the initialization switch being inserted in series to an input terminal of the current-controlled oscillator (18) and the current source (28).
摘要:
A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of the metal silicide film is etched away using a dry etching process.
摘要:
A silicon oxide film and a BPSG film are formed on a silicon substrate to serve as insulating films, and a contact hole is selectively formed in the insulating films. An impurity diffusion layer is formed on the surface layer of the semiconductor substrate at the bottom portion of the contact hole. A second metal film serving as a metal electrode is formed to cover the BPSG film and the impurity diffusion layer, and a first metal film serving as a barrier layer is formed between the second metal film and the BPSG film and impurity diffusion layer. The first metal film prevents boron contained in the BPSG film from being diffused in the second metal film, thereby to prevent precipitation of silicon in the contact hole.
摘要:
Conductive layers (5a, 9a) included in a multi-layer structure (30a) are electrically interconnected through a conductive connection wall (13a) provided in a contact hole (12) and contacting the side surface (22) of the multi-layer structure (30a). The upper conductive layer (11a) existing on the multi-layer structure (30a) and the lower conductive layer (3) exisitng under the multi-layer structure (30a) are electrically interconnected through a conductive film (11b) provided in the contact hole (12). These two interconnections are insulated from each other by an insulating film (18) provided on the connection wall (13a).
摘要:
A cord-type mowing tool having a cutter body formed with at least one radially extending bore for receiving a cord serving as a grass cutting blade, and a clamping member fitted in the central bottom opening of the cutter body for forcing against the central portion of the cutter body an end portion of the cord inserted in the radially extending bore to hold the cord in place. The clamping member is threadably connected to the cutter body, so that by loosening and tightening the threadable connection it is possible to readily replace the old cord by a new cord of a predetermined length. The grass cutting tool is simple in construction, light in weight and reliable in performance.
摘要:
An amplitude regulation circuit which includes a maximum detection circuit which outputs a maximum signal MAX that is distorted to some extent during and around a time when a highest-level signal switches between signals V1, V2, and V3. The amplitude regulation circuit also includes a minimum detection circuit which outputs a minimum signal MIN that is distorted to some extent during and around a time when a lowest-level signal switches between signals V1, V2, and V3. Such distortions reduce variations in amplitude detection signal AMP that represents a difference between MAX and MIN. The amplitude regulation circuit amplifies rotor position signals H1 to H3 based on amplitude detection signal AMP according to AGC, thereby maintaining amplitudes of signals V1 to V3 constant while maintaining sinusoidal waveforms.
摘要:
An amplitude regulation circuit which includes a maximum detection circuit which outputs a maximum signal MAX that is distorted to some extent during and around a time when a highest-level signal switches between signals V1, V2, and V3. The amplitude regulation circuit also includes a minimum detection circuit which outputs a minimum signal MIN that is distorted to some extent during and around a time when a lowest-level signal switches between signals V1, V2, and V3. Such distortions reduce variations in amplitude detection signal AMP that represents a difference between MAX and MIN. The amplitude regulation circuit amplifies rotor position signals H1 to H3 based on amplitude detection signal AMP according to AGC, thereby maintaining amplitudes of signals V1 to V3 constant while maintaining sinusoidal waveforms.
摘要:
In a semiconductor memory device having cylindrical capacitors, word lines and a bit line are formed on a semiconductor substrate. A cylindrical storage node is connected to a conductive layer. The cylindrical storage node is provided at its inner wall with protruded conductive conductors which protrudes in a radially inward direction of the cylindrical storage node. A surface of the cylindrical storage node is covered with a capacitor insulating film. The outer surface of the cylindrical storage node is covered with a cell plate with the capacitor insulating film therebetween.
摘要:
The semiconductor memory device includes a semiconductor substrate 1 having a conductive layer 6 formed on its main surface. Word lines 4c, 4d and a bit line 11 is formed on the semiconductor substrate. Insulating films 8, 12 are provided to cover the word lines 4c, 4d and the bit line 11. A barrier film 14 is provided on the insulating films 8, 12 for protecting the insulating films 8, 12 from etchant. A cylindrical storage node 170 is electrically connected to the conductive layer 6. The cylindrical storage node 170 includes a bottom conductive portion 17a and a sidewall conductive portion 17b. An outer surface of the storage node 170 is covered with a capacitor insulating film 112. The outer surface of the cylindrical storage node 170 is covered with a cell plate 22, with the capacitor insulating film 112 interposed therebetween.