METHOD AND APPARATUS FOR REAL-TIME MEASUREMENT OF TRACE METAL CONCENTRATION IN CHEMICAL MECHANICAL POLISHING (CMP) SLURRY
    1.
    发明申请
    METHOD AND APPARATUS FOR REAL-TIME MEASUREMENT OF TRACE METAL CONCENTRATION IN CHEMICAL MECHANICAL POLISHING (CMP) SLURRY 失效
    在化学机械抛光(CMP)浆料中实时测量金属浓度的方法和装置

    公开(公告)号:US20080080669A1

    公开(公告)日:2008-04-03

    申请号:US11936863

    申请日:2007-11-08

    IPC分类号: G01N23/223

    摘要: A system (and method) for real-time measurement of trace metal concentration in a chemical mechanical polishing (CMP) slurry, includes an electromagnetic radiation flow cell carrying a CMP slurry, a slurry pickup head coupled to the flow cell, and an analyzer for measuring properties of the slurry flowing through the flow cell.

    摘要翻译: 用于在化学机械抛光(CMP)浆料中实时测量痕量金属浓度的系统(和方法)包括携带CMP浆料的电磁辐射流动池,耦合到流动池的浆料拾取头和用于 测量流过流动池的浆料的性质。

    HIGH TURBULENCE HEAT EXCHANGER
    3.
    发明申请
    HIGH TURBULENCE HEAT EXCHANGER 审中-公开
    高温热交换器

    公开(公告)号:US20070295014A1

    公开(公告)日:2007-12-27

    申请号:US11849725

    申请日:2007-09-04

    IPC分类号: F25D17/02

    摘要: The present invention is a method and apparatus for cooling a heat source. In one embodiment a heat exchanger is provided and includes a channel for receiving a coolant, the channel having a first surface and an opposing second surface. A mesh plug is disposed in the channel for turbulently mixing the coolant within the channel. The first surface of the channel is disposed proximate a semiconductor heat source. In one embodiment the first surface comprises plastic. In one embodiment, the second surface comprises metal, for example, copper. In one embodiment the mesh plug comprises a nickel-coated copper mesh.

    摘要翻译: 本发明是用于冷却热源的方法和装置。 在一个实施例中,提供了热交换器,并且包括用于接收冷却剂的通道,该通道具有第一表面和相对的第二表面。 通道中布置网状塞,用于在通道内湍流地混合冷却剂。 通道的第一表面靠近半导体热源设置。 在一个实施例中,第一表面包括塑料。 在一个实施例中,第二表面包括金属,例如铜。 在一个实施例中,网孔包括镀镍铜网。

    ACTIVE LIQUID METAL THERMAL SPREADER
    4.
    发明申请
    ACTIVE LIQUID METAL THERMAL SPREADER 有权
    活性液体金属热膨胀器

    公开(公告)号:US20070215338A1

    公开(公告)日:2007-09-20

    申请号:US11751334

    申请日:2007-05-21

    IPC分类号: F28F7/00

    摘要: The present invention is a method and apparatus for cooling a semiconductor heat source. In one embodiment a thermal spreader is provided and includes a substrate for supporting the semiconductor heat source and a heat sink coupled to the substrate. A channel is disposed between the heat sink and substrate. The channel has at least one wall defined by the heat sink. The surface area of the channel wall defined by the heat sink is about 10 to about 100 times the surface area of a bottom surface of the semiconductor heat source. A coolant, for example liquid metal, circulates within the channel.

    摘要翻译: 本发明是用于冷却半导体热源的方法和装置。 在一个实施例中,提供了散热器,并且包括用于支撑半导体热源的衬底和耦合到衬底的散热器。 通道设置在散热器和基板之间。 该通道具有至少一个由散热器限定的壁。 由散热器限定的通道壁的表面积为半导体热源的底面的表面积的约10至约100倍。 冷却剂,例如液态金属,在通道内循环。

    MEASUREMENT SYSTEM FOR DETERMINING THE THICKNESS OF A LAYER DURING A PLATING PROCESS
    5.
    发明申请
    MEASUREMENT SYSTEM FOR DETERMINING THE THICKNESS OF A LAYER DURING A PLATING PROCESS 审中-公开
    用于确定镀层工艺过程中层厚度的测量系统

    公开(公告)号:US20050168750A1

    公开(公告)日:2005-08-04

    申请号:US10905583

    申请日:2005-01-12

    IPC分类号: G01B11/06 G03F7/09 G01B9/02

    摘要: A method and a measurement system to provide an in situ measurement of the thickness of a layer deposited on a substrate is described. The measurement system includes the optical sensor integrated into a movable element hovering over the substrate in close proximity to the layer. The optical sensor element is adapted to emit and detect optical signals. The measurement system provides an optical, and thus contactless approach to determine the thickness of the layer during the growth of the layer. The inventive measurement system is particularly suited for an electroplating system and process.

    摘要翻译: 描述了提供沉积在基底上的层的厚度的原位测量的方法和测量系统。 该测量系统包括集成在可靠元件上的光学传感器,该可移动元件在该层附近盘旋在基板上。 光学传感器元件适于发射和检测光学信号。 测量系统提供光学且因此非接触的方法来确定层生长过程中层的厚度。 本发明的测量系统特别适用于电镀系统和工艺。