公开(公告)号：US20130077818A1

公开(公告)日：2013-03-28

申请号：US13241207

申请日：2011-09-23

申请人： TONG-TEE TAN ,  SRINIVASAN LAKSHMANAN CHETTIAR

发明人： TONG-TEE TAN ,  SRINIVASAN LAKSHMANAN CHETTIAR

IPC分类号： G06K9/00

CPC分类号： G01C21/20

摘要： A detection method of an optical navigation device is disclosed. The device is used for determining whether an object is lifted from the optical navigation device or not. The method includes steps of reading the detection image detected by the optical navigation device, calculating the image signal value thereof during non-lift status, and integrating a historical threshold value with the image signal value according to adaptive factors for generating an adjustment threshold value serving as the navigation threshold of the detection image. The historical threshold value is the navigation threshold of a former detection image of the detection image. A step of comparing the adjustment threshold with the image signal value for determining whether the image signal value passes the navigation threshold or not may also be included. If the image signal value does not pass the navigation threshold, the object is determined as in the lift status.

摘要翻译： 公开了一种光学导航装置的检测方法。 该装置用于确定物体是否从光学导航装置提升。 该方法包括以下步骤：读取由光学导航装置检测到的检测图像，在非提升状态期间计算其图像信号值，并根据用于生成调整阈值的适应性因子将历史阈值与图像信号值进行积分 作为检测图像的导航阈值。 历史阈值是检测图像的前检测图像的导航阈值。 还可以包括将调整阈值与用于确定图像信号值是否通过导航阈值的图像信号值进行比较的步骤。 如果图像信号值未通过导航阈值，则该对象被确定为在升降状态。

公开(公告)号：US08067992B2

公开(公告)日：2011-11-29

申请号：US12134323

申请日：2008-06-06

申请人： Alex Jianzhong Chen ,  Gim Eng Chew ,  Tong Tee Tan ,  Kok Chin Pan

发明人： Alex Jianzhong Chen ,  Gim Eng Chew ,  Tong Tee Tan ,  Kok Chin Pan

IPC分类号： H03K3/26

CPC分类号： H03K3/011 ,  H03K3/0231

摘要： Disclosed are various embodiments of temperature-compensated relaxation oscillator circuits that may be fabricated using conventional CMOS manufacturing techniques. The relaxation oscillator circuits described herein exhibit superior low temperature coefficient performance characteristics, and do not require the use of expensive off-chip high precision resistors to effect temperature compensation. Positive and negative temperature coefficient resistors arranged in a resistor array offset one another to provide temperature compensation in the relaxation oscillator circuit.

摘要翻译： 公开了可以使用常规CMOS制造技术制造的温度补偿张弛振荡器电路的各种实施例。 本文描述的张弛振荡器电路表现出优异的低温系数性能特性，并且不需要使用昂贵的片外高精度电阻器来实现温度补偿。 布置在电阻器阵列中的正和负温度系数电阻彼此偏移以在张弛振荡器电路中提供温度补偿。

公开(公告)号：US20060071345A1

公开(公告)日：2006-04-06

申请号：US10954630

申请日：2004-09-30

申请人： Anthony Chiu ,  Tong Tee

发明人： Anthony Chiu ,  Tong Tee

IPC分类号： H01L23/52

CPC分类号： H01L25/0657 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/92225 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/0401

摘要： A stacked die integrated circuit assembly comprising: 1) a substrate; 2) a first integrated circuit die mounted on the substrate; 3) a copper interposer mounted on the first integrated circuit die; and 4) a second integrated circuit die mounted on the copper interposer. The copper interposer significantly reduces the warping of the stacked die IC assembly caused by the warping of the substrate due to thermal changes in the substrate. The copper interposer has a significantly higher coefficient of thermal expansion than a conventional silicon (Si) interposer. The higher CTE enables the copper interposer to counteract the substrate warping.

摘要翻译： 1.一种堆叠管芯集成电路组件，包括：1）衬底; 2）安装在基板上的第一集成电路管芯; 3）安装在第一集成电路管芯上的铜插入件; 和4）安装在铜插入件上的第二集成电路管芯。 铜插入器显着地减少了由于衬底的热变化引起的衬底的翘曲引起的堆叠的芯片IC组件的翘曲。 铜插入器具有比常规硅（Si）插入件显着更高的热膨胀系数。 较高的CTE使得铜插入件能够抵消衬底翘曲。

公开(公告)号：US20050139972A1

公开(公告)日：2005-06-30

申请号：US10746745

申请日：2003-12-24

申请人： Anthony Chiu ,  Tong Tee

发明人： Anthony Chiu ,  Tong Tee

IPC分类号： H01L23/50 ,  H01L23/31 ,  H01L23/495 ,  H05K3/34 ,  H01L23/02

CPC分类号： H01L21/4821 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49582 ,  H01L2224/32245 ,  H01L2924/00014 ,  H05K3/341 ,  H05K3/3442 ,  H05K2201/0373 ,  H05K2201/09745 ,  H05K2201/10727 ,  H05K2201/10969 ,  Y02P70/613 ,  H01L2224/45099

摘要： A system and method is disclosed for improving solder joint reliability in an integrated circuit package. Each terminal of a quad, flat, non-leaded integrated circuit package is formed having portions that define a solder slot in the bottom surface of the terminal. An external surface of the die pad of the integrated circuit package is also formed having portions that define a plurality of solder slots on the periphery of the die pad. When solder is applied to the die pad and to the terminals, the solder that fills the solder slots increases the solder joint reliability of the integrated circuit package.

摘要翻译： 公开了一种用于提高集成电路封装中的焊点可靠性的系统和方法。 四边形，平坦的，非引线的集成电路封装的每个端子形成有在端子的底表面中限定焊料槽的部分。 集成电路封装的管芯焊盘的外表面也形成有在管芯焊盘的周边上限定多个焊料槽的部分。 当焊料施加到管芯焊盘和端子时，填充焊料槽的焊料增加了集成电路封装的焊点可靠性。

公开(公告)号：US20130076693A1

公开(公告)日：2013-03-28

申请号：US13241204

申请日：2011-09-23

申请人： TONG-TEE TAN ,  SRINIVASAN LAKSHMANAN CHETTIAR

发明人： TONG-TEE TAN ,  SRINIVASAN LAKSHMANAN CHETTIAR

IPC分类号： G06F3/042

CPC分类号： G06F3/0354 ,  G06F3/042

摘要： A tapping detection method of an optical navigation module is disclosed. The module includes an optical sensor and a processor. The method includes steps of calculating a displacement quantity of an object contacting with the optical navigation module according to a sense image sensed by the optical sensor, and comparing the displacement quantity with a displacement threshold value. When the displacement quantity is smaller than the displacement threshold value, the method further includes steps of calculating a brightness difference value of the sense image, and comparing the brightness difference value with a brightness threshold value. When the brightness difference value is smaller than the brightness threshold value, the optical navigation module may be determined to be tapped by the object.

摘要翻译： 公开了一种光学导航模块的敲击检测方法。 该模块包括光学传感器和处理器。 该方法包括根据由光学传感器感测到的感测图像计算与光学导航模块接触的物体的位移量，并将位移量与位移阈值进行比较的步骤。 当位移量小于位移阈值时，该方法还包括以下步骤：计算感测图像的亮度差值，并将亮度差值与亮度阈值进行比较。 当亮度差值小于亮度阈值时，可以确定光学导航模块被物体挖掘。

公开(公告)号：US20090302954A1

公开(公告)日：2009-12-10

申请号：US12134323

申请日：2008-06-06

申请人： Alex Jianzhong Chen ,  Gim Eng Chew ,  Tong Tee Tan ,  Kok Chin Pan

发明人： Alex Jianzhong Chen ,  Gim Eng Chew ,  Tong Tee Tan ,  Kok Chin Pan

IPC分类号： G05D23/20 ,  H03K3/26

CPC分类号： H03K3/011 ,  H03K3/0231

摘要： Disclosed are various embodiments of temperature-compensated relaxation oscillator circuits that may be fabricated using conventional CMOS manufacturing techniques. The relaxation oscillator circuits described herein exhibit superior low temperature coefficient performance characteristics, and do not require the use of expensive off-chip high precision resistors to effect temperature compensation. Positive and negative temperature coefficient resistors arranged in a resistor array offset one another to provide temperature compensation in the relaxation oscillator circuit.

摘要翻译： 公开了可以使用常规CMOS制造技术制造的温度补偿张弛振荡器电路的各种实施例。 本文描述的张弛振荡器电路表现出优异的低温系数性能特性，并且不需要使用昂贵的片外高精度电阻器来实现温度补偿。 布置在电阻器阵列中的正和负温度系数电阻彼此偏移以在张弛振荡器电路中提供温度补偿。

公开(公告)号：US20130076880A1

公开(公告)日：2013-03-28

申请号：US13241459

申请日：2011-09-23

申请人： KULDEEP KUMAR SAXENA ,  TONG TEE TAN ,  NELSON YII KON

发明人： KULDEEP KUMAR SAXENA ,  TONG TEE TAN ,  NELSON YII KON

IPC分类号： H04N7/18 ,  G06K9/00

CPC分类号： G06K9/00026

摘要： An image processing method includes the following steps. The first step is utilizing a linear image capturing apparatus with odd number of image capturing units to capture image portions of object. Next step is taking the image portions which are captured by the first-end and the right-end image capturing units as the reference and comparing the image portions which are captured by the central image capturing units with the reference so as to correct and eliminate the overlapped noise. Next step is interlacing and re-constructing the processed image portions which have no overlapped portions as the integrated image.

摘要翻译： 图像处理方法包括以下步骤。 第一步是利用具有奇数个图像捕获单元的线性图像捕获装置来捕获对象的图像部分。 下一步是将由第一端和右端图像捕获单元捕获的图像部分作为参考，并将由中央图像捕获单元捕获的图像部分与参考进行比较，以便校正和消除 重叠噪声。 下一步是将没有重叠部分的经处理的图像部分交织并重新构造为集成图像。

公开(公告)号：US07881323B2

公开(公告)日：2011-02-01

申请号：US11627458

申请日：2007-01-26

申请人： King Wai Wong ,  Tong Tee Tan

发明人： King Wai Wong ,  Tong Tee Tan

IPC分类号： H04L12/28 ,  H04J3/02

CPC分类号： H03K19/177

摘要： An application-specific integrated circuit (ASIC) for use with a programmable I/O module includes programmable circuitry that enables the ASIC to be configured to support various different I/O functions. The ASIC includes a pin interface, a data interface, a digital section, and an analog section. The pin interface supports analog and digital signal communication and the data interface supports digital data communication. The digital section includes registers for storing digital data such as configuration commands, signal control commands, and digital signal information. The analog section is in electrical signal communication with pin interface and digital data communication with the registers. The analog section includes multiple function-specific elements for processing an electrical signal that is communicated via the pin interface such that the analog section can be configured to establish one of multiple different function-specific processing paths in response to a configuration command received via the data interface.

摘要翻译： 与可编程I / O模块一起使用的专用集成电路（ASIC）包括可编程电路，使ASIC能够配置为支持各种不同的I / O功能。 ASIC包括引脚接口，数据接口，数字部分和模拟部分。 引脚接口支持模拟和数字信号通信，数据接口支持数字数据通信。 数字部分包括用于存储诸如配置命令，信号控制命令和数字信号信息的数字数据的寄存器。 模拟部分与引脚接口进行电信号通信，并与寄存器进行数字数据通信。 模拟部分包括用于处理通过引脚接口传送的电信号的多个功能特定元件，使得模拟部分可以被配置为响应于经由数据接收到的配置命令来建立多个不同的功能特定处理路径中的一个 接口。

公开(公告)号：US20070210455A1

公开(公告)日：2007-09-13

申请号：US11715260

申请日：2007-03-07

申请人： Shanzhong Wang ,  Valeriy Nosik ,  Tong Tee ,  Xueren Zhang

发明人： Shanzhong Wang ,  Valeriy Nosik ,  Tong Tee ,  Xueren Zhang

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for use in an integrated circuit is provided. The interconnect structure includes a first low-K dielectric material. The first low-K material may be modified with a first group of carbon nanotubes (CNTs) and disposed on a metal line. The first low-K material is modified by dispersing the first group of CNTs in a solution, spinning the solution onto a silicon wafer and curing the solution to form the first low-K material modified with the first CNTs. The metal line includes a top layer and a bottom layer connected by a metal via. The interconnect structure also includes a second low-K dielectric material modified with a second group of CNTs and disposed on the bottom layer. Accordingly, embodiments the present disclosure could help to increase the mechanical strength of the low-K material or the entire interconnect structure.

摘要翻译： 提供了一种用于集成电路的互连结构。 互连结构包括第一低K电介质材料。 第一低K材料可以用第一组碳纳米管（CNT）进行改性并设置在金属线上。 通过将第一组CNT分散在溶液中来将第一低K材料进行改性，将溶液旋转到硅晶片上并固化该溶液以形成用第一CNT改性的第一低K材料。 金属线包括由金属通孔连接的顶层和底层。 互连结构还包括用第二组CNT修饰并设置在底层上的第二低K电介质材料。 因此，本公开的实施例可以有助于增加低K材料或整个互连结构的机械强度。

公开(公告)号：US20070216032A1

公开(公告)日：2007-09-20

申请号：US11715261

申请日：2007-03-07

申请人： Tong Tee ,  Xueren Zhang ,  Shanzhong Wang ,  Valeriy Nosik ,  Jijie Zhou ,  Sridhar Idapalapati ,  Subodh Mhaisalkar ,  Zhi Yuan Loo

发明人： Tong Tee ,  Xueren Zhang ,  Shanzhong Wang ,  Valeriy Nosik ,  Jijie Zhou ,  Sridhar Idapalapati ,  Subodh Mhaisalkar ,  Zhi Yuan Loo

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/785 ,  H01L2924/00

摘要： A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

摘要翻译： 在互连结构上涂覆或以其它方式形成保护层。 互连结构包括金属线（例如通过金属通孔连接的顶部和底部金属层）和低K材料。 保护层包括垂直排列的电介质或分散有碳纳米管的其它材料。 保护层可以包括一层或多层碳纳米管，并且碳纳米管可以在保护层的每个层中具有任何合适的分散体，取向和图案。 除其他之外，碳纳米管有助于减少或防止互连结构的损坏，例如通过减少或防止低K材料的塌陷或金属线与低K材料之间的分层。