公开(公告)号：US08640968B2

公开(公告)日：2014-02-04

申请号：US12662756

申请日：2010-05-03

Applicant: Tzu Cheng Lin ,  Yu Kuang Lee ,  Wei Cheng Chou ,  Hsin Ju Wu

Inventor： Tzu Cheng Lin ,  Yu Kuang Lee ,  Wei Cheng Chou ,  Hsin Ju Wu

IPC: F24F11/053

CPC classification number: H05B1/0227

Abstract: This specification discloses a device of controlling temperature gain and the method thereof. The invention detects the temperature of work environment and uses it to generate a control signal and a PWM signal for dynamically controlling the heaters around electronic elements to heat up. When the temperature of work environment is too low, the invention can increase the stability of the electronic elements.

Abstract translation: 本说明书公开了一种控制温度增益的装置及其方法。 本发明检测工作环境的温度，并用它来产生控制信号和PWM信号，用于动态地控制电子元件周围的加热器加热。 当工作环境温度太低时，本发明可以提高电子元件的稳定性。

公开(公告)号：US20130023065A1

公开(公告)日：2013-01-24

申请号：US13189287

申请日：2011-07-22

Applicant: Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

Inventor： Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

IPC: H01L21/66

CPC classification number: H01J37/32963

Abstract: Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.

Abstract translation: 执行终点确定的方法和装置。 一种方法包括将晶片接收到用于进行RIE蚀刻的蚀刻工具室中; 开始RIE蚀刻以在晶片中形成通孔; 接收与RIE蚀刻工艺相关的蚀刻工具室的一个或多个物理参数的原位测量; 为腔室中的RIE蚀刻提供虚拟计量模型; 将接收到的原位测量值输入到腔室中的RIE蚀刻的虚拟测量模型; 执行虚拟计量模型以通过深度估计电流; 将经过深度的估计电流与目标深度进行比较; 并且当比较指示当前经过深度在目标深度的预定阈值内时; 输出停止信号。 公开了一种用于该方法实施例的装置。

公开(公告)号：US20110266356A1

公开(公告)日：2011-11-03

申请号：US12662756

申请日：2010-05-03

Applicant: Tzu Cheng Lin ,  Yu Kuang Lee ,  Wei Cheng Chou ,  Hsin Ju Wu

Inventor： Tzu Cheng Lin ,  Yu Kuang Lee ,  Wei Cheng Chou ,  Hsin Ju Wu

IPC: B60H1/00

CPC classification number: H05B1/0227

Abstract: This specification discloses a device of controlling temperature gain and the method thereof. The invention detects the temperature of work environment and uses it to generate a control signal and a PWM signal for dynamically controlling the heaters around electronic elements to heat up. When the temperature of work environment is too low, the invention can increase the stability of the electronic elements.

Abstract translation: 本说明书公开了一种控制温度增益的装置及其方法。 本发明检测工作环境的温度，并用它来产生控制信号和PWM信号，用于动态地控制电子元件周围的加热器加热。 当工作环境温度太低时，本发明可以提高电子元件的稳定性。

公开(公告)号：US20100097769A1

公开(公告)日：2010-04-22

申请号：US12288702

申请日：2008-10-21

Applicant: Tzu Cheng Lin

Inventor： Tzu Cheng Lin

IPC: H05K7/20

CPC classification number: H05K7/20409 ,  G06F1/20

Abstract: A heat-dissipating structure for the expansion board architecture is provided. A fixing element disposed on the heat-absorbing substrate fixes the motherboard and the first expansion board. The heat-generating elements on the motherboard or the first expansion board are directly in touch with the heat-absorbing surface of the heat-absorbing substrate to absorb their heat. The heat-dissipating board extended from the side of the heat-absorbing substrate then dissipates the heat absorbed by the heat-absorbing substrate. The structure thus solves the problems that existing heat-dissipating structures occupy larger space and therefore cannot be effectively used in an expansion board architecture to dissipate heat produced by the heat-generating elements between the motherboard and the expansion board and that it is likely to have assembly tolerance. Using the structure can reduce the space and the assembly tolerance, but effectively enhance heat dissipation in the expansion board architecture.

公开(公告)号：US20140016261A1

公开(公告)日：2014-01-16

申请号：US13545971

申请日：2012-07-10

Applicant: Tzu Cheng Lin ,  Wei Cheng Chou

Inventor： Tzu Cheng Lin ,  Wei Cheng Chou

IPC: H05K7/20 ,  G06F1/20

CPC classification number: H05K1/0209 ,  G06F1/20 ,  G06F1/206 ,  H01L23/34 ,  H01L23/3677 ,  H01L2924/0002 ,  H05K1/0212 ,  H05K2201/10151 ,  H05K2201/10416 ,  H05K2203/1115 ,  H05K2203/165 ,  H01L2924/00

Abstract: A heating and heat dissipating multi-layer circuit board structure for keeping operating temperatures of electronic components is provided. The outer layer of the multi-layer printed circuit board is in contact with electronic components. The operating temperatures of electronic components are measured through by a temperature measuring circuit. When the operating temperature of at least one electronic component is lower than a default temperature, the heating circuits corresponding to the electronic components are enabled respectively to heat the electronic components through corresponding heat conduction elements. When the operating temperature of at least one electronic component is higher than another default temperature, the heating circuits corresponding to the electronic components are disabled to transfer the heat from the electronic components to the heat conduction elements automatically. Therefore, the structure achieves the goal of keeping the operating temperature of each electronic component in the corresponding environment.

Abstract translation: 提供了用于保持电子部件的工作温度的加热和散热多层电路板结构。 多层印刷电路板的外层与电子部件接触。 通过温度测量电路测量电子部件的工作温度。 当至少一个电子部件的工作温度低于默认温度时，对应于电子部件的加热电路分别启用，以通过相应的导热元件加热电子部件。 当至少一个电子部件的工作温度高于另一个默认温度时，对应于电子部件的加热电路被禁止，以将热量从电子部件传递到热传导元件。 因此，该结构实现了将各电子部件的工作温度保持在相应环境中的目标。

公开(公告)号：US20130024019A1

公开(公告)日：2013-01-24

申请号：US13285679

申请日：2011-10-31

Applicant: Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

Inventor： Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

IPC: G05B13/04

CPC classification number: G05B19/41875 ,  G05B2219/32201 ,  G05B2219/32205 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22

Abstract: Methods and apparatus for performing end point determination are disclosed. An embodiment includes an apparatus comprising a process tool and a programmable processor. The process tool has an output for signaling in-situ measurements of physical parameters during processing of a wafer in the process tool, and the process tool has an input for receiving a signal indicating a modification of a recipe for the processing. The programmable processor is for executing a virtual metrology model of the process tool to estimate an estimated characteristic of the wafer achieved during the processing. The estimated characteristic is based on the in-situ measurements and the virtual metrology model. The programmable processor has an output for transmitting the signal when the estimated characteristic exceeds a predetermined threshold based on a target characteristic.

Abstract translation: 公开了用于执行终点确定的方法和装置。 实施例包括一种包括处理工具和可编程处理器的装置。 处理工具具有用于在处理工具中的晶片处理期间信号化物理参数的原位测量的输出，并且处理工具具有用于接收指示用于处理的配方的修改的信号的输入。 可编程处理器用于执行处理工具的虚拟计量模型以估计在处理期间实现的晶片的估计特性。 估计的特征是基于原位测量和虚拟计量模型。 可编程处理器具有用于当估计特性基于目标特性超过预定阈值时发送信号的输出。

公开(公告)号：US07773378B2

公开(公告)日：2010-08-10

申请号：US12288702

申请日：2008-10-21

Applicant: Tzu Cheng Lin

Inventor： Tzu Cheng Lin

IPC: H05K7/20

CPC classification number: H05K7/20409 ,  G06F1/20

Abstract: A heat-dissipating structure for the expansion board architecture is provided. A fixing element disposed on the heat-absorbing substrate fixes the motherboard and the first expansion board. The heat-generating elements on the motherboard or the first expansion board are directly in touch with the heat-absorbing surface of the heat-absorbing substrate to absorb their heat. The heat-dissipating board extended from the side of the heat-absorbing substrate then dissipates the heat absorbed by the heat-absorbing substrate. The structure thus solves the problems that existing heat-dissipating structures occupy larger space and therefore cannot be effectively used in an expansion board architecture to dissipate heat produced by the heat-generating elements between the motherboard and the expansion board and that it is likely to have assembly tolerance. Using the structure can reduce the space and the assembly tolerance, but effectively enhance heat dissipation in the expansion board architecture.

Abstract translation: 提供了用于扩展板结构的散热结构。 设置在吸热基板上的固定元件固定母板和第一扩展板。 主板或第一扩展板上的发热元件与吸热基板的吸热表面直接接触以吸收其热量。 从吸热基板一侧延伸的散热板然后消散吸热基板所吸收的热量。 因此，该结构解决了现有散热结构占用较大空间的问题，因此不能有效地用于扩展板结构中，以散发由主板和扩展板之间的发热元件产生的热量，并且可能具有 组装公差。 使用结构可以减少空间和组装公差，但有效增强了扩展板架构的散热。

公开(公告)号：US20090197354A1

公开(公告)日：2009-08-06

申请号：US12144488

申请日：2008-06-23

Applicant: Tzu-Cheng Lin ,  Yun-Zong Tian ,  Chun-Chi Chen ,  Yi-Feng Lee

Inventor： Tzu-Cheng Lin ,  Yun-Zong Tian ,  Chun-Chi Chen ,  Yi-Feng Lee

IPC: H01L21/66 ,  G06T11/20

CPC classification number: G05B19/41875 ,  G05B2219/32196 ,  G05B2219/45031 ,  Y02P90/22

Abstract: A system and method for monitoring a manufacturing process are provided. A wafer is provided. Process parameters of a manufacturing machine are in-situ measured and recorded if the wafer is processed in the manufacturing machine. A wafer measured value of the wafer is measured after the wafer has been processed. The process parameters are transformed into a process summary value. A two dimensional orthogonal chart with a first axis representing the wafer measured value and a second axis representing the process summary value is provided. The two dimensional orthogonal chart includes a close-loop control limit. A visualized point representing the wafer measured value and the process summary value is displayed on the two dimensional orthogonal chart.

Abstract translation: 提供了一种用于监视制造过程的系统和方法。 提供晶片。 如果在制造机器中处理晶片，则原位测量和记录制造机器的工艺参数。 在晶片处理后测量晶片的晶圆测量值。 过程参数被转换为过程摘要值。 提供具有表示晶片测量值的第一轴的二维正交图和表示处理总结值的第二轴。 二维正交图包括闭环控制极限。 表示晶圆测量值和过程总结值的可视化点显示在二维正交图上。

公开(公告)号：US08445296B2

公开(公告)日：2013-05-21

申请号：US13189287

申请日：2011-07-22

Applicant: Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

Inventor： Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

IPC: H01L21/02

CPC classification number: H01J37/32963

Abstract: Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.

Abstract translation: 执行终点确定的方法和装置。 一种方法包括将晶片接收到用于进行RIE蚀刻的蚀刻工具室中; 开始RIE蚀刻以在晶片中形成通孔; 接收与RIE蚀刻工艺相关的蚀刻工具室的一个或多个物理参数的原位测量; 为腔室中的RIE蚀刻提供虚拟计量模型; 将接收到的原位测量值输入到腔室中的RIE蚀刻的虚拟测量模型; 执行虚拟计量模型以通过深度估计电流; 将经过深度的估计电流与目标深度进行比较; 并且当比较指示当前经过深度在目标深度的预定阈值内时; 输出停止信号。 公开了一种用于该方法实施例的装置。

公开(公告)号：US08010212B2

公开(公告)日：2011-08-30

申请号：US12241568

申请日：2008-09-30

Applicant: Yi Feng Lee ,  Tzu-Cheng Lin ,  Chun Chi Chen ,  Yun-Zong Tian

Inventor： Yi Feng Lee ,  Tzu-Cheng Lin ,  Chun Chi Chen ,  Yun-Zong Tian

IPC: G05B13/02

CPC classification number: G05B13/0275 ,  G06N99/005 ,  Y10S706/904

Abstract: A method of fuzzy control for adjusting a semiconductor machine comprising: providing measurement values from first the “parameter of a pre-semiconductor manufacturing process”, second the “parameter of the semiconductor manufacturing process”, and third the “operation parameter of the semiconductor manufacturing process”; performing a fuzzy control to define two inputs and one output corresponding to the measurement values, wherein the difference between the first and third values, and the difference between the second and third values, forms the two inputs, then from the two inputs one target output is calculated by fuzzy inference; finally, determining if the target output is in or out of an acceptable range. Whereby the target output is the “machine control parameter of the semiconductor manufacturing process” and when within an acceptable range is used for adjusting the semiconductor machine.

Abstract translation: 一种用于调整半导体机器的模糊控制方法，包括：首先从“半导体制造工艺的参数”提供测量值，第二个“半导体制造工艺的参数”，第三个“半导体制造的操作参数 处理”; 执行模糊控制以定义对应于测量值的两个输入和一个输出，其中第一和第三值之间的差异以及第二和第三值之间的差异形成两个输入，然后从两个输入一个目标输出 通过模糊推理计算; 最后，确定目标输出是否在可接受的范围之内。 由此，目标输出是“半导体制造工序的机器控制参数”，并且在可接受范围内用于调整半导体机器时。