公开(公告)号：US06929700B2

公开(公告)日：2005-08-16

申请号：US10397678

申请日：2003-03-25

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  C23C16/00

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.

摘要翻译： 一种衬底处理设备，包括衬底处理室，可操作地耦合到腔室的气体分配系统，高密度等离子体电源，可操作地耦合到气体分配系统和高密度等离子体电源的控制器以及耦合到控制器的存储器 。 存储器包括以计算机可读格式体现的计算机指令。 计算机指令包括（i）控制气体分配系统以使包含硅烷气体，含氧源，惰性气体和含氢源（其为分子氢或氢化物气体）的工艺气体流动的指令 不包括硅，硼或磷和（ii）控制高密度等离子体源以形成离子密度为至少1×10 11个/ cm 3的等离子体的说明书 从工艺气体将氧化硅层沉积在衬底上。

公开(公告)号：US06596653B2

公开(公告)日：2003-07-22

申请号：US09854406

申请日：2001-05-11

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

IPC分类号： H01L21469

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1×1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.

公开(公告)号：US07196021B2

公开(公告)日：2007-03-27

申请号：US11095704

申请日：2005-03-30

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： H01L21/31

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。

公开(公告)号：US20050181632A1

公开(公告)日：2005-08-18

申请号：US11095704

申请日：2005-03-30

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  H01L21/314 ,  H01L21/316 ,  H01L21/762 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

公开(公告)号：US06914016B2

公开(公告)日：2005-07-05

申请号：US10763018

申请日：2004-01-21

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  H01L21/314 ,  H01L21/316 ,  H01L21/762 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。

公开(公告)号：US06740601B2

公开(公告)日：2004-05-25

申请号：US09854083

申请日：2001-05-11

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： H01L2131

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

公开(公告)号：US06682603B2

公开(公告)日：2004-01-27

申请号：US10141391

申请日：2002-05-07

申请人： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

发明人： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

IPC分类号： C23C1600

CPC分类号： C23C16/45563 ,  C23C16/4583 ,  C23C16/466 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32532 ,  H01L21/28556 ,  H01L21/67069

摘要： A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface is portion, without interfering with positioning of the substrate.

摘要翻译： 用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。 基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。 当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。 支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。 由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会妨碍定位 的基底。

公开(公告)号：US20050136684A1

公开(公告)日：2005-06-23

申请号：US10746695

申请日：2003-12-23

申请人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

发明人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76837

摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

摘要翻译： 可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。 在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层， 。 在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。 在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

公开(公告)号：US20080067068A1

公开(公告)日：2008-03-20

申请号：US11523782

申请日：2006-09-19

申请人： Dongqing Li

发明人： Dongqing Li

IPC分类号： C07K1/26 ,  G01N27/00

CPC分类号： C07K1/26 ,  B03C5/005 ,  B03C5/026

摘要： The present invention relates to an apparatus and methods of separating particles or cells according to their sizes, wherein the size of each of the particles or cells is characterized by a corresponding diameter. In one embodiment, the method includes the steps of providing a microchannel structure having at least one channel that is defined by a first sidewall and a second, opposite sidewall and has an insulating protrusion formed on one of the first sidewall and the second, opposite sidewall, introducing a plurality of particles or cells in a liquid medium into the at least one channel, and generating a non-uniform electrical field in the at least one channel such that when the plurality of particles or cells passes by the insulating protrusion, the plurality of particles or cells each receives a dielectrophoretic force proportional to its diameters, thereby being separable according to their sizes. The method further has the step of collecting particles or cells after the separation of particles or cells.

摘要翻译： 本发明涉及根据其尺寸分离颗粒或细胞的装置和方法，其中每个颗粒或细胞的尺寸的特征在于相应的直径。 在一个实施例中，该方法包括以下步骤：提供具有由第一侧壁和第二相对侧壁限定的至少一个通道的微通道结构，并具有形成在第一侧壁和第二相对侧壁之一上的绝缘突起 将液体介质中的多个颗粒或细胞引入到所述至少一个通道中，并且在所述至少一个通道中产生不均匀的电场，使得当所述多个颗粒或细胞通过所述绝缘突起时，所述多个 的颗粒或细胞各自接收与其直径成比例的介电电泳力，从而根据其尺寸可分离。 该方法还具有在分离颗粒或细胞之后收集颗粒或细胞的步骤。

公开(公告)号：US07795014B2

公开(公告)日：2010-09-14

申请号：US12535526

申请日：2009-08-04

申请人： Dongqing Li

发明人： Dongqing Li

IPC分类号： C12M1/22 ,  B01J19/00

CPC分类号： B01L3/50851 ,  B01L2200/0684 ,  B01L2200/12 ,  B01L2300/0819 ,  B01L2300/0829 ,  B01L2300/0887 ,  G01N21/6428 ,  G01N21/6452 ,  G01N2021/6484

摘要： A disposable reactor module, monitoring/optical detection system and related hardware for, inter alia, chemical reactions including Polymerase Chain Reactions.

摘要翻译： 一次性反应器模块，监测/光学检测系统以及用于尤其是化学反应（包括聚合酶链反应）的相关硬件。