公开(公告)号：US08399891B2

公开(公告)日：2013-03-19

申请号：US12943933

申请日：2010-11-11

申请人： Po-Lin Lai ,  Ying-Fa Huang ,  Chun-Ming Yang ,  Wen-Bin Wu ,  Wen-Yi Lin

发明人： Po-Lin Lai ,  Ying-Fa Huang ,  Chun-Ming Yang ,  Wen-Bin Wu ,  Wen-Yi Lin

IPC分类号： H01L29/72

CPC分类号： H01L22/20 ,  H01L22/14

摘要： An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.

摘要翻译： 提供一种有源器件阵列衬底及其制造方法。 在衬底上形成包括分离的扫描线图案的第一图案化导电层。 每个扫描线图案包括彼此相邻的第一和第二扫描线。 第一和第二扫描线都具有第一和第二触点。 执行对扫描线图案的公开检查。 沟道层形成在衬底上。 包括与第一和第二扫描线隔开的数据线，位于沟道层上方的源极和漏极以及连接器的第二图案化导电层形成在衬底上。 电源相应地电连接数据线。 至少一个连接器电连接第一和第二扫描线，以便在每个扫描线图案中形成环。 形成与漏极电连接的像素电极。

公开(公告)号：US20120043558A1

公开(公告)日：2012-02-23

申请号：US12943933

申请日：2010-11-11

申请人： Po-Lin Lai ,  Ying-Fa Huang ,  Chun-Ming Yang ,  Wen-Bin Wu ,  Wen-Yi Lin

发明人： Po-Lin Lai ,  Ying-Fa Huang ,  Chun-Ming Yang ,  Wen-Bin Wu ,  Wen-Yi Lin

IPC分类号： H01L27/15 ,  H01L21/66

CPC分类号： H01L22/20 ,  H01L22/14

摘要： An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.

摘要翻译： 提供一种有源器件阵列衬底及其制造方法。 在衬底上形成包括分离的扫描线图案的第一图案化导电层。 每个扫描线图案包括彼此相邻的第一和第二扫描线。 第一和第二扫描线都具有第一和第二触点。 执行对扫描线图案的公开检查。 沟道层形成在衬底上。 包括与第一和第二扫描线隔开的数据线，位于沟道层上方的源极和漏极以及连接器的第二图案化导电层形成在衬底上。 电源相应地电连接数据线。 至少一个连接器电连接第一和第二扫描线，以便在每个扫描线图案中形成环。 形成与漏极电连接的像素电极。

公开(公告)号：US20080251933A1

公开(公告)日：2008-10-16

申请号：US11845746

申请日：2007-08-27

申请人： Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Chia-Cheng Lin

发明人： Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Chia-Cheng Lin

IPC分类号： H01L23/525 ,  H01L23/52

CPC分类号： H01L23/528 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

摘要： A metal interconnect structure includes a plurality of first plugs adjacent to each other, a first metal line extending in a first direction and contacting each first plug to form a first section with a tapered second section in between, and a second plug adjacent to the second section, both in a second direction normal to the first direction.

摘要翻译： 金属互连结构包括彼此相邻的多个第一插塞，第一金属线在第一方向上延伸并接触每个第一插塞以形成第一部分，第一部分之间具有锥形第二部分，第二插头与第二插头相邻 在第一方向垂直的第二方向上。

公开(公告)号：US20080032205A1

公开(公告)日：2008-02-07

申请号：US11513288

申请日：2006-08-31

申请人： Chui-fu Chiu ,  Wen-Bin Wu

发明人： Chui-fu Chiu ,  Wen-Bin Wu

IPC分类号： G03F1/00 ,  G03F9/00 ,  G03C5/00 ,  H01L23/544

CPC分类号： G03F7/70633

摘要： An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.

摘要翻译： 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第三矩形区域的一侧彼此平行，并且所述第二矩形区域的长边和所述第四矩形区域的长边彼此平行，所述第一矩形区域的长边垂直于所述长边 的第二矩形区域; 其中每个图案配置具有至少两个不同的图案元件，当在处理期间衬底上的任何一个图案元件被损坏时，允许其它图案元件被选择以对准。

公开(公告)号：US07304323B2

公开(公告)日：2007-12-04

申请号：US10732370

申请日：2003-12-11

申请人： Wen-Bin Wu

发明人： Wen-Bin Wu

IPC分类号： H01L23/58 ,  H01L29/10

CPC分类号： H01L22/12 ,  G03F1/44 ,  G03F7/70625

摘要： Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.

摘要翻译： 公开了一种测试掩模结构。 本发明的测试掩模结构至少包括与最终产品一定比例的阵列图案区域，其具有按照一定比例的第一图案密度; 以及具有第二图案密度的至少一个测试掩模图案区域。 在本发明的测试掩模结构中，通过根据第一图案密度和第二图案密度调整阵列图案区域的面积和测试掩模图案区域的面积来获得所需的图案密度。

公开(公告)号：US06929902B2

公开(公告)日：2005-08-16

申请号：US10370441

申请日：2003-02-20

申请人： Yuan-Hsun Wu ,  Teng-Yen Huang ,  Wen-Bin Wu ,  Yi-Nan Chen

发明人： Yuan-Hsun Wu ,  Teng-Yen Huang ,  Wen-Bin Wu ,  Yi-Nan Chen

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/311 ,  G03F7/36

CPC分类号： G03F7/427 ,  H01L21/0276 ,  H01L21/31138

摘要： A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.

摘要翻译： 防止再加工的光致抗蚀剂层中的重复塌陷的方法。 首先，施加含氧等离子体以除去塌陷的光致抗蚀剂。 因为含有氧的等离子体与包含SiO x N y Y y的底部防反射层反应，所以在底部防反射层上产生一些酸，导致在 随后再加工光致抗蚀剂。 接下来，在去除塌陷的光致抗蚀剂层之后，在抗反射层上进行碱性溶液处理。 最后，在反射层上形成返工光致抗蚀剂，而没有底切。

公开(公告)号：US06742367B2

公开(公告)日：2004-06-01

申请号：US10222885

申请日：2002-08-19

申请人： Wen bin Wu

发明人： Wen bin Wu

IPC分类号： B60R2502

CPC分类号： E05B13/101 ,  Y10T70/5416 ,  Y10T70/5827 ,  Y10T70/5832 ,  Y10T292/57

摘要： A lock. The lock includes an inner handle assembly, a latch bolt, and an outer handle assembly. The outer handle assembly includes an outer handle, an outer spindle, an actuating sleeve rotatably mounted in the outer spindle and having two guide slots each having an inclined section and a horizontal section, a locking plate mounted in the actuating sleeve and including two wings, and an unlatching member operably connected to the latch bolt. Each wing is extended through an associated guide slot into an associated positioning slot in the outer spindle. When the lock is in an unlocked state, the unlatching member is engaged with the locking plate to allow joint rotation. When the lock is in a locked state, the unlatching member is disengaged from the unlatching member such that the unlatching member is not turned when the outer handle is turned.

摘要翻译： 一个锁 该锁包括内部把手组件，闩锁螺栓和外部手柄组件。 外手柄组件包括外手柄，外心轴，可旋转地安装在外心轴中的致动套筒，具有分别具有倾斜部分和水平部分的两个引导槽，安装在致动套筒中并包括两个翼部的锁定板， 以及可操作地连接到所述闩锁螺栓的解锁构件。 每个机翼通过相关联的引导槽延伸到外主轴中的相关联的定位槽中。 当锁处于解锁状态时，解锁构件与锁定板接合以允许接合旋转。 当锁处于锁定状态时，解锁构件与解锁构件脱离接合，使得解锁构件在外手柄转动时不转动。

公开(公告)号：US20090233448A1

公开(公告)日：2009-09-17

申请号：US12119275

申请日：2008-05-12

申请人： Kuo-Yao CHO ,  Wen-Bin WU ,  Ya-Chih WANG ,  Chiang-Lin SHIH ,  Chao-Wen LAY ,  Chih-Huang WU

发明人： Kuo-Yao CHO ,  Wen-Bin WU ,  Ya-Chih WANG ,  Chiang-Lin SHIH ,  Chao-Wen LAY ,  Chih-Huang WU

IPC分类号： H01L21/306

CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/0338

摘要： A method of improving lithography resolution on a semiconductor, including the steps of providing a substrate on which a protecting layer, a first etching layer and a photoresist layer are sequentially formed; patterning the photoresist layer to form an opening so as to partially reveal the first etching layer; implanting a first ion into the revealed first etching layer to form a first doped area; and implanting a second ion into the revealed first etching layer to form a second doped area, wherein the first doped area is independent from the second doped area is provided.

摘要翻译： 一种改善半导体上的光刻分辨率的方法，包括提供其上依次形成保护层，第一蚀刻层和光致抗蚀剂层的基板的步骤; 图案化光致抗蚀剂层以形成开口，以便部分地露出第一蚀刻层; 将第一离子注入到所揭示的第一蚀刻层中以形成第一掺杂区域; 以及将第二离子注入到所揭示的第一蚀刻层中以形成第二掺杂区域，其中所述第一掺杂区域与所述第二掺杂区域无关。

公开(公告)号：US20070190736A1

公开(公告)日：2007-08-16

申请号：US11616849

申请日：2006-12-27

申请人： An-Hsiung Liu ,  Chiang-Lin Shih ,  Wen-Bin Wu ,  Hui-Min Mao ,  Lin-Chin Su ,  Pei-Ing Lee

发明人： An-Hsiung Liu ,  Chiang-Lin Shih ,  Wen-Bin Wu ,  Hui-Min Mao ,  Lin-Chin Su ,  Pei-Ing Lee

IPC分类号： H01L21/20

CPC分类号： H01L29/66181 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L27/1087 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A small-size (w

摘要翻译： 提出了与“k1工艺”结合的小尺寸（w <0.5微米）对准标记，其特别适用于制造需要高精度AA-DT和GC-DT重叠对准的沟槽电容器DRAM器件。 利用“k1工艺”来蚀刻散布在对准标记沟槽中的多晶硅，并刷新沟槽轮廓，从而提高覆盖对准精度和精度。

公开(公告)号：US06998226B2

公开(公告)日：2006-02-14

申请号：US10193464

申请日：2002-07-10

申请人： Yuan-Hsun Wu ,  Wen-Bin Wu ,  Yung Long Hung ,  Ya Chih Wang

发明人： Yuan-Hsun Wu ,  Wen-Bin Wu ,  Yung Long Hung ,  Ya Chih Wang

IPC分类号： G03F7/38 ,  G03F7/40

CPC分类号： G03F7/168 ,  G03F7/091 ,  G03F7/2022 ,  G03F7/38 ,  Y10S430/151

摘要： A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35 ° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.

摘要翻译： 形成图案化光致抗蚀剂层的方法。 首先，在基板上形成防反射涂层。 接下来，进行第一烘焙。 然后在抗反射涂层上形成光致抗蚀剂层。 曝光进行。 进行第二烘烤，其中第一烘烤和第二烘烤之间的温度差为约35℃〜55℃。最后，进行显影。 图案化的光致抗蚀剂层特征具有根据本发明的完美的轮廓。