SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING
    2.
    发明申请
    SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING 审中-公开
    用于纳米图案和制造的阴影边缘图

    公开(公告)号:US20110151190A1

    公开(公告)日:2011-06-23

    申请号:US12599286

    申请日:2008-05-08

    IPC分类号: B32B5/16 G03F7/20 B82Y30/00

    摘要: An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm±1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated. A technique is disclosed for smoothing edge roughness of the nanostructures.

    摘要翻译: 公开了先进的高分辨率和高通量阴影边缘(116)光刻(SEL)方法,用于在衬底上形成均匀的零一维和二维纳米结构。 该方法需要高真空倾斜气相沉积和预图案化层(100)的补偿阴影效应。 还公开了补偿交叉衬底变化的方法。 补偿方法可以实现均匀纳米尺度特征或10nm±1nm量级的纳米角(110)的常规,低成本制造,其可用于蚀刻纳米孔(196)或形成纳米结构,例如纳米线(169) ,使用选择性金属剥离过程。 提出了一种晶片级分析模型,用于预测通过阴影效应制作的预先图案化边缘的纳米光栅(110)的宽度。 通过将补偿和图案反转技术与多个阴影图案组合,可以产生诸如交叉纳米线的二维结构。 公开了一种用于平滑纳米结构的边缘粗糙度的技术。