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公开(公告)号：US20240322075A1
公开(公告)日：2024-09-26
申请号：US18732430
申请日：2024-06-03
发明人： Ling-Yuan HONG , Qing WANG , Dazhong CHEN , Quanyang MA , Su-Hui LIN , Chung-Ying CHANG
CPC分类号： H01L33/08 , H01L27/156 , H01L33/44 , H01L33/382 , H01L33/42 , H01L33/62
摘要： A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.
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公开(公告)号：US20240274774A1
公开(公告)日：2024-08-15
申请号：US18644133
申请日：2024-04-24
发明人： Jenlung YANG , Feng ZUO , Liming ZHANG , Weipeng LIN , Chung-Ying CHANG
CPC分类号： H01L33/62 , H01L27/0248 , H01L27/15 , H01L33/38
摘要： A light emitting device and a light emitting diode structure are provided. The light emitting diode structure includes a light emitting diode, a protection diode, an insulating layer, two pads, and a conductive structure. The protection diode is connected in antiparallel to the light emitting diode. Each diode includes an epitaxial structure and electrodes located on the epitaxial structure. The insulating layer covers the epitaxial structure of each diode. A first pad is located on the insulating layer and electrically connected to a first electrode and a fourth electrode. A second pad is located on the insulating layer and electrically connected to a second electrode. The conductive structure is connected to the second pad and electrically connected to the N-type semiconductor layer of the protection diode. A material of the conductive structure and a material of the first electrode are different.
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公开(公告)号：US20240113254A1
公开(公告)日：2024-04-04
申请号：US18541090
申请日：2023-12-15
发明人： Yung-Ling LAN , Chan-Chan LING , Chi-Ming TSAI , Chia-Hung CHANG
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US11848401B2
公开(公告)日：2023-12-19
申请号：US18096628
申请日：2023-01-13
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai , Chia-Hung Chang
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US20230395757A1
公开(公告)日：2023-12-07
申请号：US18089391
申请日：2022-12-27
发明人： QIHUA LIAO , ZHENDONG WEI , ZHIYING ZHENG , CHUNHSIEN LEE
CPC分类号： H01L33/44 , H01L33/405
摘要： A light-emitting device includes a light-emitting laminated structure, an electrode structure that is disposed on the light-emitting laminated structure, an insulation layer that is disposed on the light-emitting laminated structure, and a blocking layer structure that is interposed between the electrode structure and the insulation layer. The light-emitting laminated structure includes a first type semiconductor layer, a second type semiconductor layer, and an active layer that is interposed between the first type semiconductor layer and the second type semiconductor layer and is configured to emit light. The blocking layer structure has a first section and a second section that forms a continuous structure with the first section. The first section is interposed between a side wall of the electrode structure and the insulation layer, and the second section is interposed between the insulation layer and the light-emitting laminated structure.
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6.发明公开公开(公告)号：US20230395749A1
公开(公告)日：2023-12-07
申请号：US18450440
申请日：2023-08-16
发明人： Zheng WU , Chia-en LEE
CPC分类号： H01L33/22 , H01L33/0093 , H01L33/62 , H01L33/08
摘要： A micro light-emitting element, a micro light-emitting array, a transfer method, and a display are provided. The micro light-emitting element has a side surface, a bottom surface and a top surface opposite to the bottom surface, and the top surface is a light-emitting surface. The micro light-emitting element includes a substrate arranged below the bottom surface and a transfer adhesive film covering the top surface. The transfer adhesive film does not exceed an edge of the top surface. During the laser removal of the transfer adhesive film, the adhesive adheres to the top surface and does not fall onto the substrate, thereby avoiding the generation of substrate dirt.
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公开(公告)号：US20230253376A1
公开(公告)日：2023-08-10
申请号：US18189374
申请日：2023-03-24
发明人： Shao-Ying TING , Junfeng FAN , Chia-En LEE , Chen-Ke HSU
IPC分类号： H01L25/075 , H01L27/15 , H01L33/46
CPC分类号： H01L25/0753 , H01L27/156 , H01L33/46
摘要： Disclosed is a micro light-emitting component, a micro light-emitting diode, and a transfer layer. The transfer layer has a recess for receiving the micro light-emitting diode to permit the micro light-emitting diode to be retained by the transfer layer, and is transformable from a first state, in which the transfer layer is deformed by the micro light-emitting diode to form the recess, to a second state, in which the micro light-emitting diode received in the recess is retained by the transfer layer. Also disclosed are micro light-emitting component matrix and a method for manufacturing the micro light-emitting component matrix.
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公开(公告)号：US20230024651A1
公开(公告)日：2023-01-26
申请号：US17835368
申请日：2022-06-08
发明人： XIUSHAN ZHU , YAN LI
摘要： A light-emitting diode includes a light-emitting structure, a first insulating layer and a first electrode layer. The first electrode layer is formed on the first insulating layer and in the first opening, and is electrically connected to the first semiconductor layer through the first opening. The first electrode layer includes a first metal reflective layer and a stress adjustment layer. The first metal reflective layer in the first opening is in contact with the first semiconductor layer, and located between the first semiconductor layer and the stress adjustment layer. The first metal reflective layer and the stress adjustment layer contain a same metal element, and a content of the same metal element in the first metal reflective layer is greater than that in the stress adjustment layer.
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公开(公告)号：US20230014850A1
公开(公告)日：2023-01-19
申请号：US17852365
申请日：2022-06-29
发明人： QING WANG , MINYOU HE , JIANGBIN ZENG , SHIWEI LIU , JIN XU , XIAOLIANG LIU , ZHANGGEN XIA , LINGYUAN HONG , BAOJUN SHI , SHUIJIE WANG , KE LIU , DAZHONG CHEN , CHUNGYING CHANG
摘要： A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.
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公开(公告)号：US11522106B2
公开(公告)日：2022-12-06
申请号：US16949639
申请日：2020-11-09
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai
摘要： A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer that is disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer in such order, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.
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