公开(公告)号：US20150303871A1

公开(公告)日：2015-10-22

申请号：US13569815

申请日：2012-08-08

Applicant: Keith A. Jenkins ,  Yu-ming Lin

Inventor： Keith A. Jenkins ,  Yu-ming Lin

IPC: H03B5/12 ,  H01L29/16 ,  H01L29/786

CPC classification number: H03B5/1228 ,  H01L29/1606 ,  H01L29/78684 ,  H03B5/1203 ,  H03B7/06 ,  H03B2200/0084

Abstract: An oscillator circuit includes a field effect transistor and a resonant circuit having a first terminal connected to the field effect transistor. The resonant circuit includes an inductance and a capacitance and has a second terminal for connecting to a radiator. The field effect transistor includes a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto. The graphene channel is disposed relative to the gate electrode for being biased by the gate electrode into a negative differential resistance region of operation. The oscillator circuit is capable of generating a continuous wave THz frequency signal, and is further capable of being enabled and disabled by the bias applied to the gate electrode.

Abstract translation: 振荡器电路包括场效应晶体管和具有连接到场效应晶体管的第一端子的谐振电路。 谐振电路包括电感和电容，并且具有用于连接到散热器的第二端子。 场效应晶体管包括耦合到栅极电压源的栅电极，源电极，漏电极和设置在源电极和漏电极之间并与其电连接的石墨烯通道。 石墨烯通道相对于栅电极设置，以便被栅电极偏压成负的差分电阻区域。 振荡器电路能够产生连续波THz频率信号，并且还能够通过施加到栅电极的偏置使能和禁止。

公开(公告)号：US20150128862A1

公开(公告)日：2015-05-14

申请号：US14076289

申请日：2013-11-11

Applicant: Xuesong LI ,  Yu-Ming LIN ,  Chun-Yung SUNG

Inventor： Xuesong LI ,  Yu-Ming LIN ,  Chun-Yung SUNG

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/26

CPC classification number: C23C16/458 ,  C23C16/01 ,  C23C16/26 ,  C23C16/545

Abstract: An apparatus for processing a substrate contains a processing chamber and a substrate support assembly. The substrate support assembly is disposed within said processing chamber and adapted to support the substrate thereon while said processing is carried out, the substrate support assembly comprising at least two selectively joinable and interdigitable substrate support fixtures.

Abstract translation: 用于处理基板的装置包括处理室和基板支撑组件。 衬底支撑组件设置在所述处理室内并且适于在执行所述处理的同时在其上支撑衬底，所述衬底支撑组件包括至少两个可选择性地连接和相互交叉的衬底支撑夹具。

公开(公告)号：US08728575B2

公开(公告)日：2014-05-20

申请号：US13475167

申请日：2012-05-18

Applicant: Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

Inventor： Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

IPC: C23C16/26 ,  C23C16/34

CPC classification number: C23C16/26 ,  B82Y30/00 ,  C01B32/186 ,  C23C16/342 ,  C23C16/458 ,  C23C16/545

Abstract: A method for synthesizing a thin film, the method containing the steps of: (a) providing a substrate support assembly containing at least two selectively interdigitable substrate support fixtures; (b) loading a substrate for thin film synthesis onto said at least two fixtures; (c) interdigitating said at least two fixtures; (d) positioning said at least two fixtures in a reaction chamber and forming a thin film on a surface of the substrate; and (e) unloading the substrate from said at least two fixtures.

Abstract translation: 一种用于合成薄膜的方法，所述方法包括以下步骤：（a）提供包含至少两个选择性相互交叉的衬底支撑固定装置的衬底支撑组件; （b）将用于薄膜合成的基底装载到所述至少两个固定装置上; （c）交错所述至少两个固定装置; （d）将所述至少两个固定装置定位在反应室中并在所述基板的表面上形成薄膜; 和（e）从所述至少两个固定装置卸载基板。

公开(公告)号：US08680512B2

公开(公告)日：2014-03-25

申请号：US13614530

申请日：2012-09-13

Applicant: Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

Inventor： Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

IPC: H01L29/76

CPC classification number: H01L29/1606 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684

Abstract: A transistor structure is provided which includes a graphene layer located on an insulating layer, a first metal portion overlying a portion of the graphene layer, a second metal portion contacting and overhanging the first metal portion, a first electrode contacting a portion of the graphene layer and laterally offset from a first sidewall of the first metal portion by a lateral spacing, and a second electrode contacting another portion of the graphene layer and laterally offset from a second sidewall of the first metal portion by the lateral spacing.

Abstract translation: 提供一种晶体管结构，其包括位于绝缘层上的石墨烯层，覆盖石墨烯层的一部分的第一金属部分，与第一金属部分接触并悬垂的第二金属部分，与石墨烯层的一部分接触的第一电极 并且横向间隔地从第一金属部分的第一侧壁偏移，并且第二电极接触石墨烯层的另一部分，并且横向间隔地与第一金属部分的第二侧壁横向偏移。

公开(公告)号：US08680511B2

公开(公告)日：2014-03-25

申请号：US13369901

申请日：2012-02-09

Applicant: Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Yu-Ming Lin ,  Deborah A. Neumayer ,  Dirk Pfeiffer ,  Wenjuan Zhu

Inventor： Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Yu-Ming Lin ,  Deborah A. Neumayer ,  Dirk Pfeiffer ,  Wenjuan Zhu

IPC: H01L29/06

CPC classification number: H01L21/0237 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02617 ,  H01L21/02661 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66045 ,  H01L29/7781 ,  H01L29/78684

Abstract: A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.

Abstract translation: 在石墨烯层的最上表面上设置氮化硅层，然后在氮化硅层的最上表面上设置二氧化铪层。 氮化硅层用作二氧化铪层的润湿剂，从而防止在石墨烯层顶上形成不连续的二氧化铪塔。 共同形成低EOT双层栅极电介质的氮化硅层和二氧化铪层在石墨烯层的顶部呈现连续的形态。

公开(公告)号：US08673703B2

公开(公告)日：2014-03-18

申请号：US12620320

申请日：2009-11-17

Applicant: Yu-Ming Lin ,  Jeng-Bang Yau

Inventor： Yu-Ming Lin ,  Jeng-Bang Yau

IPC: H01L21/84

CPC classification number: H01L29/1606 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78687

Abstract: A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises processing a silicon material to form a buried oxide layer within the silicon material, a silicon substrate below the buried oxide, and a silicon-on-insulator layer on the buried oxide. A graphene layer is transferred onto the silicon-on-insulator layer. Source and drain regions are formed in the silicon-on-insulator layer, and a gate is formed above the graphene. In one embodiment, the processing includes growing a respective oxide layer on each of first and second silicon sections, and joining these silicon sections together via the oxide layers to form the silicon material. The processing, in an embodiment, further includes removing a portion of the first silicon section, leaving a residual silicon layer on the bonded oxide, and the graphene layer is positioned on this residual silicon layer.

Abstract translation: 公开了一种绝缘体上半导体结构和一种形成包括一体化石墨烯层的绝缘体上硅结构的方法。 在一个实施例中，该方法包括处理硅材料以在硅材料内形成掩埋氧化物层，在掩埋氧化物之下形成硅衬底，以及在掩埋氧化物上形成绝缘体上硅层。 将石墨烯层转移到绝缘体上硅层上。 源极和漏极区域形成在绝缘体上硅层中，并且在石墨烯上方形成栅极。 在一个实施例中，该处理包括在第一和第二硅部分中的每一个上生长相应的氧化物层，并且经由氧化物层将这些硅部分连接在一起以形成硅材料。 在一个实施例中，所述处理还包括去除所述第一硅部分的一部分，在所述键合的氧化物上留下残留的硅层，并且所述石墨烯层位于所述剩余硅层上。

公开(公告)号：US20140030636A1

公开(公告)日：2014-01-30

申请号：US13559112

申请日：2012-07-26

Applicant: Xin Zhao ,  Yu-Ming Lin

Inventor： Xin Zhao ,  Yu-Ming Lin

IPC: B32B9/00 ,  B32B15/04 ,  H01L31/0224 ,  B05D5/12 ,  C25F5/00 ,  H01G9/04 ,  H01G9/155 ,  H01M4/66 ,  B32B38/10 ,  B82Y99/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H01M4/667 ,  H01G9/2022 ,  H01G9/2031 ,  H01G9/2059 ,  H01G11/28 ,  H01M4/661 ,  H01M8/0206 ,  H01M8/0228 ,  Y02E60/13 ,  Y10T428/30 ,  Y10T428/31678

Abstract: In general, in one aspect, a graphene film is used as a protective layer for current collectors in electrochemical energy conversion and storage devices. The graphene film inhibits passivation or corrosion of the underlying metals of the current collectors without adding additional weight or volume to the devices. The graphene film is highly conductive so the coated current collectors maintain conductivity as high as that of underlying metals. The protective nature of the graphene film enables less corrosion resistant, less costly and/or lighter weight metals to be utilized as current collectors. The graphene film may be formed directly on Cu or Ni current collectors using chemical vapor deposition (CVD) or may be transferred to other types of current collectors after formation. The graphene film coated current collectors may be utilized in batteries, super capacitors, dye-sensitized solar cells, and fuel and electrolytic cells.

Abstract translation: 通常，在一个方面，石墨烯膜用作电化学能量转换和存储装置中的集电器的保护层。 石墨烯膜抑制集电器底层金属的钝化或腐蚀，而不会对器件增加额外的重量或体积。 石墨烯膜具有高导电性，因此涂层集电体保持与底层金属一样高的导电率。 石墨烯膜的保护性质使得能够使用较少的耐腐蚀性，较低成本和/或较轻重量的金属作为集电器。 石墨烯膜可以使用化学气相沉积（CVD）直接在Cu或Ni集电体上形成，或者可以在形成后转移到其它类型的集电器。 石墨烯膜涂布的集电器可用于电池，超级电容器，染料敏化太阳能电池以及燃料和电解池中。

公开(公告)号：US20140001440A1

公开(公告)日：2014-01-02

申请号：US13615040

申请日：2012-09-13

Applicant: Nestor A. BOJARCZUK ,  Matthew W. COPEL ,  Yu-ming LIN

Inventor： Nestor A. BOJARCZUK ,  Matthew W. COPEL ,  Yu-ming LIN

IPC: H01L29/78 ,  H01L21/336 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L29/66045 ,  B82Y40/00 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02269 ,  H01L21/02527 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/517 ,  H01L29/778 ,  H01L29/7781

Abstract: A carbon-based semiconductor device includes a substrate, source/drain contacts, a graphene channel, a dielectric layer, and a gate. The source/drain contacts are formed on the substrate. The graphene channel is formed on the substrate connecting the source contact and the drain contact. The dielectric layer is formed on the graphene channel with a molecular beam deposition process. The gate contact is formed over the graphene channel and on the dielectric. The gate contact is in a non-overlapping position with the source and drain contacts leaving exposed sections of the graphene channel between the gate contact and the source and drain contacts.

Abstract translation: 碳基半导体器件包括衬底，源/漏接触，石墨烯通道，电介质层和栅极。 源极/漏极触点形成在衬底上。 在连接源极触点和漏极触点的基板上形成石墨烯通道。 介电层通过分子束沉积工艺形成在石墨烯通道上。 栅极接触形成在石墨烯通道和电介质上。 栅极接触处于不重叠的位置，源极和漏极触点留下栅极接触件和源极和漏极接触之间的石墨烯通道的暴露部分。

公开(公告)号：US08617941B2

公开(公告)日：2013-12-31

申请号：US13007644

申请日：2011-01-16

Applicant: Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

Inventor： Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/778 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66045 ,  H01L29/7781 ,  H01L29/78684

Abstract: Graphene or carbon nanotube-based transistor devices and techniques for the fabrication thereof are provided. In one aspect, a transistor is provided. The transistor includes a substrate; a carbon-based material on the substrate, wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor; a patterned organic buffer layer over the portion of the carbon-based material that serves as the channel region of the transistor; a conformal high-k gate dielectric layer disposed selectively on the patterned organic buffer layer; metal source and drain contacts formed on the portions of the carbon-based material that serve as the source and drain regions of the transistor; and a metal top-gate contact formed on the high-k gate dielectric layer.

Abstract translation: 提供了石墨烯或碳纳米管的晶体管器件及其制造技术。 在一个方面，提供晶体管。 晶体管包括衬底; 在基板上的碳基材料，其中一部分碳基材料用作晶体管的沟道区，碳基材料的其它部分用作晶体管的源极和漏极区; 在用作晶体管的沟道区域的碳基材料的部分上的图案化有机缓冲层; 选择性地设置在图案化的有机缓冲层上的保形高k栅介质层; 形成在用作晶体管的源极和漏极区域的碳基材料的部分上的金属源极和漏极接触; 以及形成在高k栅极电介质层上的金属顶栅极接触。

公开(公告)号：US20130280427A1

公开(公告)日：2013-10-24

申请号：US13454113

申请日：2012-04-24

Applicant: Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

Inventor： Xuesong Li ,  Yu-Ming Lin ,  Chun-Yung Sung

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/52

Abstract: An apparatus for performing film deposition, comprises an energy source, a plurality of process tubes, and a gas manifold. The energy source is adapted to direct energy into a cylindrical space. The plurality of process tubes, in turn, pass through this cylindrical space. To perform the film deposition, the gas manifold is operative to introduce a respective gas flow into each of the plurality of process tubes.

Abstract translation: 一种用于进行膜沉积的设备，包括能量源，多个处理管和气体歧管。 能量源适于将能量引导到圆柱形空间中。 多个处理管又通过该圆柱形空间。 为了执行膜沉积，气体歧管可操作以将相应的气流引入到多个处理管中的每一个中。