摘要:
A semiconductor device receives a command corresponding to a memory access operation and performs the memory access operation after an additive latency period. The additive latency period begins when the command is received. The semiconductor device comprises a phase controller for controlling a phase of a clock signal and outputting a phase-controlled clock signal, and a controller for generating and outputting a control signal for enabling the phase controller that is disabled, at a predetermined time in the additive latency period.
摘要:
A semiconductor memory device that includes a supply voltage pad, a ground voltage pad, and at least two data input/output pads arranged between the supply voltage pad and the ground voltage pad. The semiconductor memory device has a first pull-up driver that is connected to the second data input/output pad located at a first distance from the supply voltage pad, and a first pull-down driver that is connected to the first data input/output pad located at a second distance from the ground voltage pad.
摘要:
A semiconductor device includes a resistor terminal, a reference voltage generator and a detector. The resistor terminal is connected to an external resistor. The reference voltage generator generates at least one reference voltage. The detector generates a detection signal based at least in part on a resistor terminal voltage and the at least one reference voltage. The detection signal indicates a state of an electrical connection to the resistor terminal. The resistor terminal voltage is a voltage at the resistor terminal.
摘要:
Provided is a semiconductor device for performing a calibration operation without an external ZQ calibration command and a calibration method thereof. The semiconductor device includes a calibration circuit for performing a pull-down calibration operation in response to a pull-down calibration enable signal and a command control unit for generating the pull-down calibration enable signal in response to a DLL reset signal. The calibration method includes adjusting an impedance of a first pull-up resistance structure in response to pull-up calibration codes having a default value. A pull-down calibration enable signal may be generated in response to a DLL reset signal. A voltage of the first node and a reference voltage are compared by a comparator. The comparator outputs pull-down calibration codes based on the comparison. An impedance of a pull-down resistance structure is adjusted, so a resistance of the pull-down resistance structure is equal to a resistance of the first pull-up resistance structure.
摘要:
A semiconductor device includes an on-die termination (ODT) latency clock control circuit and an ODT circuit controlled by the ODT latency clock control circuit. The ODT latency clock control circuit includes an ODT enable signal generator receiving an ODT signal input through an ODT pad of the ODT circuit, and generating an ODT enable signal, and an ODT latency clock generator generating a plurality of ODT latency clocks in response to the ODT enable signal. The ODT enable signal includes an enabling period of a first logic level and a disabling period of a second and different logic level, and the ODT enable signal generator generates the ODT enable signal by increasing the width of the enabling period by a predetermined clock cycle and only generating the clocks during the increased enabling period.
摘要:
A semi-dual reference voltage data receiving apparatus includes a first input buffer, a second input buffer, and a phase detector wherein the first input buffer includes a first input receiving unit, a first sense amplifier, and a first current offset controlling unit. The first sense amplifier senses and amplifies the voltage difference between the voltage of a first terminal of a first input transistor and the voltage of a first terminal of a second input transistor. The first current offset controlling unit controls the offset of the current that flows through the second terminal of the second input transistor.
摘要:
A duty cycle correction amplification circuit is disclosed and comprises a first amplifier comprising dual first MOS differential input transistors gated respectively by first and second reference signals, and adapted to generate first and second preliminary signals, a second amplifier comprising dual second MOS differential input transistors respectively gated by first and second preliminary signals and adapted to generate first and second internal signals, and a duty cycle corrector adapted to correct a duty cycle associated with the first and second internal signals, wherein one of the first and second internal signals comprises an amplified output signal having a corrected duty cycle.
摘要:
A phase interpolator includes a delay difference detector and a phase interpolation driver. The delay difference detector receives a delay code to detect a delay difference. The phase interpolation driver includes two or more driver blocks complementarily operating, and the phase interpolation driver interpolate two input signals in response to the delay difference to provide an interpolated output signal. Each of two or more driver blocks includes a plurality of unit drivers, each input of the unit drivers is commonly connected, and each delay of the two or more driver blocks is varied according to the delay difference.
摘要:
A phase interpolator includes a delay difference detector and a phase interpolation driver. The delay difference detector receives a delay code to detect a delay difference. The phase interpolation driver includes two or more driver blocks complementarily operating, and the phase interpolation driver interpolate two input signals in response to the delay difference to provide an interpolated output signal. Each of two or more driver blocks includes a plurality of unit drivers, each input of the unit drivers is commonly connected, and each delay of the two or more driver blocks is varied according to the delay difference.
摘要:
The DLL circuit includes a control circuit which controls bias currents of the unit delay circuits according to an externally input column address strobe writing latency (CWL) signal, and/or a DCC control circuit which adjusts steps of a DCC current of the DCC according to the externally input column address strobe writing latency (CWL) signal. The CWL signal may be input by a semiconductor memory device and may be indicative of a column address strobe writing latency of the semiconductor memory device. The semiconductor memory device may be a double data rate (DDR) synchronous DRAM (SDRAM) device.