公开(公告)号：US07740705B2

公开(公告)日：2010-06-22

申请号：US11369883

申请日：2006-03-08

申请人： Yicheng Li

发明人： Yicheng Li

IPC分类号： C23C16/505 ,  H01L21/363

CPC分类号： C23C16/4412

摘要： A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.

摘要翻译： 一种用于在衬底上气相沉积的方法和系统，其将衬底设置在与处理系统的传送空间隔离的处理系统的处理空间中，在该过程中的第一位置或第二位置处理基板 同时保持与传送空间的隔离，并且在第一位置或第二位置处将材料沉积在所述基板上。 此外，该系统包括配置为耦合到处理空间的高电导排气装置，由此在沉积系统中处理的基板的颗粒污染最小化。 排气装置包括位于基板上方的泵送系统和排气管，其中排气管道具有位于基板平面下方的入口。

公开(公告)号：USD593969S1

公开(公告)日：2009-06-09

申请号：US29278809

申请日：2007-04-10

申请人： Yicheng Li

设计人： Yicheng Li

公开(公告)号：US20080127895A1

公开(公告)日：2008-06-05

申请号：US12023149

申请日：2008-01-31

申请人： Shou-Qian SHAO ,  Yicheng Li

发明人： Shou-Qian SHAO ,  Yicheng Li

IPC分类号： C23C16/452

CPC分类号： H01L21/67115 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/482 ,  H01L21/31662 ,  H01L21/31683

摘要： An ultraviolet-ray-assisted processing apparatus (10) for a semiconductor process includes a window disposed in a wall defining the process chamber (12) and to face a worktable (11), and configured to transmit ultraviolet rays. A light source (15) is disposed outside the process chamber (12) to face the window (20), and configured to emit ultraviolet rays. A supply system configured to supply a process gas in the process chamber (12) includes a head space (21) formed in the window (20) and which the process gas passes through, and a plurality of discharge holes (22) for discharging the process gas.

摘要翻译： 一种用于半导体工艺的紫外线辅助处理设备（10）包括设置在限定处理室（12）并且面向工作台（11）的壁中并被配置为透射紫外线的窗口。 光源（15）设置在处理室（12）的外面以面对窗口（20），并被配置为发射紫外线。 构造成在处理室（12）中供应处理气体的供应系统包括形成在窗口（20）中并且处理气体通过的顶部空间（21）和用于排出处理气体的多个排出孔（22） 工艺气体。

公开(公告)号：US20070209590A1

公开(公告)日：2007-09-13

申请号：US11369939

申请日：2006-03-08

申请人： Yicheng Li

发明人： Yicheng Li

IPC分类号： C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/4409

摘要： A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.

摘要翻译： 描述了一种用于处理处理系统的处理空间中的衬底的方法，计算机可读介质和系统，该处理系统与处理系统的传送空间是真空隔离的。 密封装置设置在构造成限定处理空间的第一室组件和被配置为限定传送空间的第二室组件之间。 当密封装置接合时，在处理空间和传送空间之间提供真空隔离。 密封装置包括两个或更多个接触脊，其间形成有一个或多个凹穴。 当密封装置接合在第一室组件和第二室组件之间时，气体被捕获在一个或多个袋中。 当密封装置在第一室组件和第二室组件之间脱离时，该被捕获的气体有助于释放密封装置。

公开(公告)号：US06403926B2

公开(公告)日：2002-06-11

申请号：US09849348

申请日：2001-05-07

申请人： Yicheng Li

发明人： Yicheng Li

IPC分类号： F27B514

CPC分类号： H01L21/67109 ,  C30B25/10 ,  C30B31/12

摘要： A thermal processing apparatus includes a cooling water passage in a circumferential wall of a processing vessel such that the cooling water passage extends from a water inlet port to a turn-around point along the circumferential wall in a first direction and further from the turn-around point to a water exit port in a second, opposite direction.

摘要翻译： 热处理装置包括在处理容器的周壁中的冷却水通道，使得冷却水通道沿着第一方向沿着圆周壁从进水口延伸到转向点，并且远离转向 在第二个相反的方向指向出水口。

公开(公告)号：US08454749B2

公开(公告)日：2013-06-04

申请号：US11305036

申请日：2005-12-19

申请人： Yicheng Li

发明人： Yicheng Li

IPC分类号： C23C16/06

CPC分类号： C23C16/4401 ,  C23C16/4409 ,  H01J37/32623 ,  H01L21/67126 ,  Y10T70/5765

摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

摘要翻译： 一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度， 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

公开(公告)号：US20070209588A1

公开(公告)日：2007-09-13

申请号：US11369754

申请日：2006-03-08

申请人： Yicheng Li

发明人： Yicheng Li

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4412

摘要： A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

摘要翻译： 描述了一种在真空处理系统的处理空间中处理基板的方法，计算机可读介质和系统。 真空泵与真空处理系统流体连通并且构造成抽空处理空间，同时过程材料供应系统气动地耦合到真空处理系统并且被配置为将处理气体供应到处理空间。 此外，真空泵气动地联接到过程供应系统并且构造成有时抽真空处理气体供应系统。

公开(公告)号：US20070116873A1

公开(公告)日：2007-05-24

申请号：US11281376

申请日：2005-11-18

申请人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

发明人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

IPC分类号： H05H1/24 ,  C23C16/00 ,  G06F19/00

CPC分类号： C23C16/45517 ,  C23C16/4401 ,  C23C16/4412 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32522

摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

摘要翻译： 一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度， 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

公开(公告)号：US20060130757A1

公开(公告)日：2006-06-22

申请号：US11017643

申请日：2004-12-22

申请人： YiCheng Li

发明人： YiCheng Li

IPC分类号： C23C16/00

CPC分类号： C23C16/5096 ,  C23C16/16 ,  C23C16/45565 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449

摘要： An apparatus for controlling precursor chemistry. The apparatus includes a chamber including a mixing space, at least one input coupled to the mixing space; and at least one output coupled to the mixing space. A motor subassembly coupled to the chamber and coupled to a mixing element in the mixing space. A controller coupled to the motor subassembly and to the chamber.

摘要翻译： 用于控制前体化学的装置。 该装置包括一个包括一个混合空间的腔室，至少一个与混合空间相连的输入口; 以及耦合到混合空间的至少一个输出。 耦合到所述室并且耦合到所述混合空间中的混合元件的马达子组件。 耦合到电动机子组件和室的控制器。

公开(公告)号：US20050260835A1

公开(公告)日：2005-11-24

申请号：US10466113

申请日：2001-11-27

申请人： Lin Sha ,  Shou-Qian Shao ,  Yicheng Li

发明人： Lin Sha ,  Shou-Qian Shao ,  Yicheng Li

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/56 ,  F27B5/04 ,  F27B5/06 ,  F27B5/13 ,  F27B5/14 ,  F27B5/16 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  H01L21/316 ,  H01L21/477

CPC分类号： C23C16/45565 ,  C23C16/481 ,  H01L21/67115 ,  Y10T29/41

摘要： The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.

摘要翻译： 单个基板热处理装置（2）包括处理室（5），其布置成容纳目标基板（W）并设置有设置在其天花板上的喷头（10）。 当目标衬底（W）进行半导体处理时，支撑构件（28）设置成支撑目标衬底（W）以使其面向喷头（10）。 加热灯（30）设置在支撑部件（28）的下方，用于照射光以加热目标基板（W）。 支撑构件（28）和加热灯（30）通过电梯机构（20）相对于喷头（10）一起上下移动。 电梯机构（20）根据不同的处理温度设定喷头（30）和加热灯（10）之间的不同距离，从而使喷头（10）的底面的温度变化下降到预定范围 。