摘要:
Provided are a level shifter and a semiconductor device having an OFF-chip driver (OCD) using the same. The level shifter includes a plurality of series connected logic gates receiving a first-state input signal having a first power supply voltage level and generating a level-shifted first-state output signal having a second power supply voltage level. The logic gates receive as power supply voltages at least one intermediate power supply voltage having at least one voltage level intermediate between the first power supply voltage level and the second power supply voltage level, and an intermediate power supply voltage applied to the present logic gate is equal to or higher than an intermediate power supply voltage applied to the previous logic gate.
摘要:
A system for providing a reference voltage includes a tester adapted to provide a predetermined current, a first ground pad connected to a ground voltage of the tester, a second ground pad connected between the tester and the first ground pad, the second ground pad being connected to the tester through first and second resistors, a reference voltage pad connected to a node between the first and second resistors, the reference voltage pad adapted to provide a test reference voltage, and a multiplexer connected to the reference voltage pad, the multiplexer configured to output the test reference voltage as a reference voltage during substantial voltage variation.
摘要:
The invention is directed to data input/output organization system and method in a semiconductor memory device. The memory device has a plurality of memory arrays, in one embodiment, an odd number of memory arrays. The arrays are divided into blocks, and the blocks are divided into segments. A control circuit provides control signals to the memory arrays such that data is input and/or output to and from the memory device in multiples of nine bits. The data bits are input or output simultaneously without the need for multiplexing circuitry. This results in reduced power consumption and increased memory processing speed.
摘要:
The invention is directed to data input/output organization system and method in a semiconductor memory device. The memory device has a plurality of memory arrays, in one embodiment, an odd number of memory arrays. The arrays are divided into blocks, and the blocks are divided into segments. A control circuit provides control signals to the memory arrays such that data is input and/or output to and from the memory device in multiples of nine bits. The data bits are input or output simultaneously without the need for multiplexing circuitry. This results in reduced power consumption and increased memory processing speed.
摘要:
Methods and apparatus for performing read and write operations in a semiconductor memory device comprising an I/O (input/output) architecture comprising a separate data input bus and data output bus. Read and write operations are sequentially performed in a same cycle using QDR2 (Quadruple Data Rate 2) wherein each of the input and output modes operate at a 2-bit burst mode and a double data rate (DDR) mode, thereby minimizing cycle time or read and write operations are sequentially performed in a same cycle using QDR4 (Quadruple Data Rate 4), wherein each of the input and output modes operate at a 4-bit burst mode and a DDR mode, thereby minimizing the cycle time. In another aspect, when a read command is input in one cycle, a read operation is performed in synchronization with a rising edge of clock and a write operation is performed in synchronization with a signal that operates during the read operation.
摘要:
An internal clock generating circuit of a synchronous type semiconductor memory device includes a transmission part for transmitting a first clock enable signal in response to applying a first level of a first clock signal. It also includes a latch part for latching the first clock enable signal transmitted from the transmission part. A gating part gates the latched first clock enable signal with the first clock signal to generate a second clock signal as an internal clock signal for the memory device. This reduces a time lag by which the speed of the internal clock is synchronized with the external clock signal.
摘要:
An integrated circuit device includes a pin for receiving a DC voltage component signal. The device includes a signal source for applying an AC signal to the pin, a buffer for converting the AC signal into a digital signal, and a digital detector for detecting a frequency of the digital signal and outputting a predetermined detection signal. The predetermined detection signal is activated when the frequency of the digital signal is greater than or equal to a predetermined frequency. The predetermined detection signal is used as a signal for setting predetermined functional modes. The device further includes registers or a differential amplifier and a decoder for generating a plurality of functional mode signals.
摘要:
Disclosed is a semiconductor integrated circuit device which includes a test element group circuit connected between a first and a second pad. The test element group circuit includes a plurality of semiconductor devices connected in series between the first and second pads. At least two adjacent ones of the semiconductor devices are connected to each other via a signal path that is formed by a multi-layer interconnection structure.
摘要:
A system for providing a reference voltage includes a tester adapted to provide a predetermined current, a first ground pad connected to a ground voltage of the tester, a second ground pad connected between the tester and the first ground pad, the second ground pad being connected to the tester through first and second resistors, a reference voltage pad connected to a node between the first and second resistors, the reference voltage pad adapted to provide a test reference voltage, and a multiplexer connected to the reference voltage pad, the multiplexer configured to output the test reference voltage as a reference voltage during substantial voltage variation.
摘要:
A transmission delay measuring circuit may include a first transmission path, a second transmission path, an inversion circuit, a first multiplexer, and an output terminal. The second transmission path may have the same structure as the structure of the first transmission path and may receive the output of the first transmission path. The inversion circuit may invert the output of the second transmission path. The first multiplexer may output one of the external input signal and an inverted output of the second transmission path to the first transmission path in response to a test mode enable signal. The output terminal may output, as a measuring signal, a signal in an arbitrary node of a closed loop formed of the first transmission path, the second transmission path, the inversion circuit, and the first multiplexer. The transmission delay measuring apparatus may more accurately measure the transmission delay of a transmission path in a semiconductor device in a die-to-die wafer state or a package state.