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    Semiconductor laser device
    1.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5034954A

    公开(公告)日：1991-07-23

    申请号：US492838

    申请日：1990-03-13

    申请人： Yoshito Seiwa

    发明人： Yoshito Seiwa

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/18327 ,  H01S5/2063 ,  H01S5/2068

    摘要： A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the side walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.

    摘要翻译： 一种半导体激光器件，包括：衬底，其包含发射激光的沟槽;第一层，设置在所述衬底和活性层之间，所述有源层包括与所述沟槽相对的超晶格区域，并且具有与所述沟槽侧壁中的区域相同的导电类型 所述沟槽和所述第一层中与所述超晶格区域的不同导电类型的超晶格相邻的无序区域，用于限制从所述衬底到所述有源层的电流流动。 制造半导体激光器件的方法包括注入改变导电类型的杂质离子，但是抑制退火后的超晶格区域的混乱。 离子通过沟槽注入并在槽的侧壁中产生所需的导电类型区域。

    Semiconductor laser array
    2.
    发明授权
    Semiconductor laser array 失效
    半导体激光阵列

    公开(公告)号：US4947401A

    公开(公告)日：1990-08-07

    申请号：US304170

    申请日：1989-01-31

    申请人： Susumu Hinata ,  Yoshito Seiwa

    发明人： Susumu Hinata ,  Yoshito Seiwa

    IPC分类号： H01S5/00 ,  H01S5/40

    CPC分类号： H01S5/4031 ,  H01S5/24 ,  H01S5/4081

    摘要： A semiconductor laser array including multiple semiconductor layers serially disposed on each other to form a plurality of laser stripes that are laterally disposed within the layers each of the lasers stripes including a waveguide of a particular width wherein each of the waveguides has either a relatively wide width or a relatively narrow width and the stripes are laterally arranged with alternatingly wide and narrow waveguides.

    摘要翻译： 一种半导体激光器阵列，包括彼此串联设置的多个半导体层，以形成多个激光条纹，该激光条横向设置在每个激光条的层内，包括特定宽度的波导，其中每个波导具有相对较宽的宽度 或相对窄的宽度，并且条纹横向布置有交替宽且窄的波导。

    Semiconductor laser
    3.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4868837A

    公开(公告)日：1989-09-19

    申请号：US235294

    申请日：1988-08-23

    申请人： Yoshito Seiwa ,  Toshitaka Aoyagi

    发明人： Yoshito Seiwa ,  Toshitaka Aoyagi

    IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/223

    CPC分类号： H01S5/16 ,  H01S5/2232

    摘要： A semiconductor laser includes an active region which includes a portion having a refractive index distribution with a relatively samll refractive index difference which allows only the fundamental mode of the transverse modes in the neighborhood of the light output facet. The other region of the active region has a refractive index distribution with a large refractive index difference which allows the fundamental mode as well as higher order modes.

    摘要翻译： 半导体激光器包括有源区，其包括具有相对折射率差的折射率分布的部分，其仅允许光输出小面附近的横模的基本模式。 有源区域的另一区域具有折射率差大的折射率分布，其允许基模和高阶模。

    Method of producing a semiconductor laser by implanting impurities which suppress disordering
    4.
    发明授权
    Method of producing a semiconductor laser by implanting impurities which suppress disordering 失效
    通过植入抑制性疾病产生半导体激光的方法

    公开(公告)号：US5116769A

    公开(公告)日：1992-05-26

    申请号：US673319

    申请日：1991-03-22

    申请人： Yoshito Seiwa

    发明人： Yoshito Seiwa

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/18327 ,  H01S5/2063 ,  H01S5/2068

    摘要： A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the sides walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.

    Laser diode
    7.
    发明授权
    Laser diode 失效
    激光二极管

    公开(公告)号：US4701926A

    公开(公告)日：1987-10-20

    申请号：US837358

    申请日：1986-03-06

    申请人： Yoshito Seiwa ,  Saburo Takamiya

    发明人： Yoshito Seiwa ,  Saburo Takamiya

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/223 ,  H01S5/2232

    摘要： A laser diode in accordance with the present invention comprises: a substrate (11) of p-GaAs; a current constricting layer (12) of n-GaAs formed with a slit (13) over the substrate, wherein the slit is opened through the constricting layer and separates the constricting layer into two areas; a liner(s) (21) of p-GaAs formed on at least both the inner side walls of the slit; a lower clad layer (14) of p-Ga.sub.0.6 Al.sub.0.4 As formed over the constricting layer, burying the slit; an active layer (15) of p-Ga.sub.0.9 Al.sub.0.1 As which is formed over the lower clad layer and has a refractive index higher than that of the lower clad layer; and an upper clad layer of n-Ga.sub.0.6 Al.sub.0.4 As which is formed over the active layer and has a refractive index lower than that of the active layer.

    摘要翻译： 根据本发明的激光二极管包括：p-GaAs的衬底（11）; 在衬底上形成有狭缝（13）的n-GaAs电流收缩层（12），其中狭缝通过收缩层打开并将收缩层分成两个区域; 形成在狭缝的至少两个内侧壁上的p-GaAs的衬垫（21）; 在收缩层上形成的p-Ga0.6Al0.4As的下包层（14），掩埋该狭缝; 形成在下包层上的折射率高于下包层的折射率的p-Ga0.9Al0.1As的有源层（15） 以及在有源层上形成的折射率低于有源层的折射率的n-Ga0.6Al0.4As的上包层。

    Semiconductor laser device
    8.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5010375A

    公开(公告)日：1991-04-23

    申请号：US353029

    申请日：1989-05-17

    申请人： Yoshito Seiwa

    发明人： Yoshito Seiwa

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/223 ,  H01S5/24 ,  H01S5/32 ,  H01S5/323

    CPC分类号： H01S5/24 ,  H01S5/32308 ,  H01S5/021 ,  H01S5/2237 ,  H01S5/3201

    摘要： A semiconductor laser device include a Si substrate, a current confinement layer having an aperture disposed on the substrate, compound semiconductor layers disposed on the current confinement layer and on the Si substrate at the aperture of the current confinement layer, and a buffer layer for relieving the stress caused by the difference in lattice constants disposed between the Si substrate and the compound semiconductor layers. The Si substrate is of a first conductivity type and the current confinement layer is of a second conductivity type, or the current confinement layer comprises a compound semiconductor while the substrate comprises Si. The aperture of the current confinement layer is produced by anodic oxidation and selective etching of the current confinement layer. Therefore, a good re-growth interface at the substrate is obtained. There are no problems from residual oxides at the surface of the substrate, of Si or p type impurities diffusing out of the surface of the substrate, or of non-uniform thermal etching during the subsequent crystal growth processes.

    摘要翻译： 半导体激光器件包括Si衬底，具有设置在衬底上的孔的电流限制层，设置在电流限制层上的化合物半导体层和位于电流限制层的孔径处的Si衬底上，以及缓冲层 由Si衬底和化合物半导体层之间的晶格常数差引起的应力。 Si衬底是第一导电类型，并且电流限制层是第二导电类型，或者电流限制层包含化合物半导体，而衬底包含Si。 电流限制层的孔径通过阳极氧化和电流限制层的选择性蚀刻产生。 因此，获得了在衬底上良好的再生长界面。 在基板表面的残留氧化物，扩散到基板表面之外的Si或p型杂质或在随后的晶体生长过程中不均匀的热蚀刻没有问题。