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    Semiconductor laser device
    2.
    发明申请
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US20060018358A1

    公开(公告)日：2006-01-26

    申请号：US11144772

    申请日：2005-06-06

    申请人： Tomoko Kadowaki ,  Tohru Takiguchi ,  Toshio Tanaka ,  Yutaka Mihashi

    发明人： Tomoko Kadowaki ,  Tohru Takiguchi ,  Toshio Tanaka ,  Yutaka Mihashi

    IPC分类号： H01S3/097 ,  H01S5/00

    CPC分类号： H01S5/0425 ,  H01S5/0021 ,  H01S5/2214 ,  H01S5/2231

    摘要： A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.

    摘要翻译： 半导体激光器件包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。 电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形刮削，每个顶点具有小于180度的内角。 由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

    Long wavelength transmitter opto-electronic integrated circuit
    3.
    发明授权
    Long wavelength transmitter opto-electronic integrated circuit 失效
    长波长发射机光电集成电路

    公开(公告)号：US5311046A

    公开(公告)日：1994-05-10

    申请号：US757803

    申请日：1991-09-11

    申请人： Yutaka Mihashi

    发明人： Yutaka Mihashi

    IPC分类号： H01L21/338 ,  H01L27/15 ,  H01L29/778 ,  H01L29/812 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/062 ,  H01L33/00

    CPC分类号： H01S5/06203 ,  H01L27/15 ,  H01S5/0424 ,  H01S5/026

    摘要： A long wavelength transmitter OEIC includes a transverse direction current injection type semiconductor laser and a high electron mobility transistor which are integrated on a semi-insulating substrate. The semiconductor laser includes at least an AlGaInAs lower cladding layer, a quantum well active layer and a high resistivity AlGaInAs upper cladding layer successively grown on the semi-insulating substrate, disordered regions formed in the quantum well active layer by diffusions of p type and n type dopants, and an active region sandwiched by the disordered regions. The transistor includes an operating layer and a carrier supplying layer both including AlGaInAs series material and formed on the high resistivity AlGaInAs upper cladding layer. This transistor uses the upper cladding layer as a leakage current preventing layer. This structure can be formed by only one epitaxial growth, resulting in low cost. In addition, since the above layers are successively grown on a flat substrate, photolithography processes for forming a gate of HEMT are performed on a flat surface, so that a fine gate pattern can be formed with high precision. As a result, a transmitter OEIC performing high speed modulation are produced.

    摘要翻译： 长波长发射器OEIC包括集成在半绝缘衬底上的横向电流注入型半导体激光器和高电子迁移率晶体管。 半导体激光器至少包括在半绝缘基板上连续生长的AlGaInAs下包层，量子阱活性层和高电阻率AlGaInAs上包层，通过p型和n型扩散形成在量子阱活性层中的无序区域 型掺杂剂和由无序区域夹持的有源区域。 该晶体管包括工作层和载流子供应层，其两者都包括AlGaInAs系列材料并形成在高电阻率AlGaInAs上覆层上。 该晶体管使用上覆层作为防漏电流层。 这种结构只能通过一个外延生长形成，导致低成本。 此外，由于上述层在平坦基板上连续生长，因此在平坦表面上进行用于形成HEMT的栅极的光刻处理，从而可以高精度地形成精细的栅极图案。 结果，产生执行高速调制的发射机OEIC。

    Method of producing a semiconductor laser
    5.
    发明授权
    Method of producing a semiconductor laser 失效
    半导体激光器的制造方法

    公开(公告)号：US4829023A

    公开(公告)日：1989-05-09

    申请号：US126501

    申请日：1987-11-30

    申请人： Yutaka Nagai ,  Yutaka Mihashi ,  Tetsuya Yagi ,  Yoichiro Ota

    发明人： Yutaka Nagai ,  Yutaka Mihashi ,  Tetsuya Yagi ,  Yoichiro Ota

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/32308 ,  H01S5/2232 ,  H01S5/2237 ,  Y10S148/017 ,  Y10S148/056 ,  Y10S148/095 ,  Y10S148/118

    摘要： A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.

    摘要翻译： 一种半导体激光器的制造方法，包括在基板上同时连续生长至少两个半导体层，最终生长层不含铝和在含有铝的最终生长层之前生长的层，在最终生长层上蚀刻条纹槽 露出包含铝的半导体层的一部分，在最终生长层上生长不包括铝的第二半导体层和含有铝的半导体层的暴露表面，并且在不含铝的第二半导体层上生长包括铝的半导体层。

    Substrate for producing semiconductor wafer
    8.
    发明授权
    Substrate for producing semiconductor wafer 失效
    用于生产半导体晶片的基板

    公开(公告)号：US5439723A

    公开(公告)日：1995-08-08

    申请号：US150879

    申请日：1993-11-12

    申请人： Motoharu Miyashita ,  Norio Hayafuji ,  Yutaka Mihashi

    发明人： Motoharu Miyashita ,  Norio Hayafuji ,  Yutaka Mihashi

    IPC分类号： H01L21/02 ,  B28D5/00 ,  C30B33/00 ,  H01L21/68 ,  B32B3/02

    CPC分类号： B28D5/0005 ,  B28D5/0011 ,  C30B33/00 ,  Y10T428/219 ,  Y10T428/24273 ,  Y10T428/24298 ,  Y10T428/24306 ,  Y10T428/24314 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24777

    摘要： A semiconductor wafer includes a notch or a hole used in preparing an orientation flat on the wafer. The notch in the wafer includes a side that is perpendicular to the surfaces of the wafer and aligned along a cleavage plane of the wafer for forming the orientation flat by cleaving. A hole in a wafer preferably includes an axis aligned along the cleaving plane. A sharp, non-rounded cleavage is formed by preparing the notch or hole after the completion of any etching processes or other steps that may round the edges of the flat. The sharp edges aid in achieving a precision alignment using the orientation flat.

    摘要翻译： 半导体晶片包括用于制备晶片上的定向平面的凹口或孔。 晶片中的凹口包括垂直于晶片表面并沿着晶片的解理平面排列的一侧，用于通过切割形成取向平面。 晶片中的孔优选地包括沿着切割平面对准的轴。 通过在完成任何蚀刻工艺之后制备凹口或孔而形成尖锐的非圆形裂纹，或者可以在平面边缘周围的其它步骤。 锋利的边缘有助于使用定向平板实现精确对准。

    Method of fabricating an integrated semiconductor light modulator and laser
    9.
    发明授权
    Method of fabricating an integrated semiconductor light modulator and laser 失效
    制造集成半导体光调制器和激光器的方法

    公开(公告)号：US5436195A

    公开(公告)日：1995-07-25

    申请号：US292203

    申请日：1994-08-18

    申请人： Tadashi Kimura ,  Yutaka Mihashi ,  Katuhiko Goto ,  Takushi Itagaki

    发明人： Tadashi Kimura ,  Yutaka Mihashi ,  Katuhiko Goto ,  Takushi Itagaki

    IPC分类号： H01L27/15 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/20 ,  H01L21/20

    CPC分类号： H01S5/0265 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/2077 ,  Y10S117/902

    摘要： In a method of fabricating an integrated semiconductor light modulator and laser device, a semiconductor layer having first and second regions of different crystal compositions is produced on each chip region of a semiconductor wafer by a selective crystal growth using, as a mask, a dielectric film having a prescribed pattern. Thereafter, a semiconductor laser and a light modulator that modulates laser light emitted from the semiconductor layer are produced in a first semiconductor region and a second semiconductor region, respectively, of each chip region. In this method, the shape of the dielectric mask pattern and the shape of the opening of the mask pattern on each chip region is symmetrical with the dielectric mask pattern and opening of an adjacent chip region along the optical waveguide direction of the semiconductor laser. The semiconductor layer is grown on the wafer so that the first and second semiconductor regions of different crystal compositions on each chip region are in contact with semiconductor regions having the same crystal composition of an adjacent chip region. As the result, at opposite edges of the chip region in the optical waveguide direction, the crystal compositions of the first and second semiconductor regions are the same.

    摘要翻译： 在制造集成半导体光调制器和激光器件的方法中，通过选择性晶体生长，在半导体晶片的每个芯片区域上制造具有不同晶体组成的第一和第二区域的半导体层，使用作为掩模的电介质膜 具有规定的图案。 此后，分别在每个芯片区域的第一半导体区域和第二半导体区域中产生调制从半导体层发射的激光的半导体激光器和光调制器。 在该方法中，电介质掩模图案的形状和每个芯片区域上的掩模图案的开口的形状与电介质掩模图案对准，并且沿着半导体激光器的光波导方向打开相邻的芯片区域。 半导体层在晶片上生长，使得在每个芯片区域上具有不同晶体组成的第一和第二半导体区域与具有相邻芯片区域的相同晶体组成的半导体区域接触。 结果，在光波导方向的芯片区域的相对边缘处，第一和第二半导体区域的晶体组成相同。

    Semiconductor laser device
    10.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5218614A

    公开(公告)日：1993-06-08

    申请号：US858020

    申请日：1992-03-26

    申请人： Yutaka Mihashi

    发明人： Yutaka Mihashi

    IPC分类号： H01L29/74 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/227

    CPC分类号： H01S5/227 ,  H01S5/0425 ,  H01S5/2205 ,  H01S5/2275

    摘要： A semiconductor laser device has a thyristor current confinement structure at both sides of an active region. A p-n junction in the current confinement structure is forward biased during laser operation and is short-circuited by a metal layer or a low resistance material layer. Therefore, injection of holes from the p layer into the n layer of the short-circuited junction during laser operation is suppressed whereby the thyristor current confinement structure is not likely to be turned on. In addition, the current flowing through the blocking layer is decreased. As a result, current blocking is significantly improved, preventing a reduction in the laser output power and a reduction in the linearity of the light output versus current characteristic of the laser.