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1.发明申请Film of SP3-bonded boron nitride having a self-organized surface texture capable of promoting field electron emission 审中-公开具有能够促进场电子发射的自组织表面纹理的SP3键合氮化硼的膜公开(公告)号：US20100151193A1
公开(公告)日：2010-06-17
申请号：US12379723
申请日：2009-02-27
IPC分类号： B32B3/30
CPC分类号： H01J1/304 , C23C16/342 , C23C16/482 , H01J9/025 , H01J2201/30446 , Y10T428/24355
摘要： A membrane body of sp3-bonded boron nitride has excellent field electron emission. The membrane body can withstand high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use. The membrane body includes a surface texture in a self-organized manner by vapor-phase deposition.
摘要翻译： sp3键合氮化硼的膜体具有优异的场电子发射。 膜体可以承受高强度的电场，允许电子的增强的发射导致高的电流密度，并且在长时间使用中不会降解。 膜体通过气相沉积以自组织的方式包括表面纹理。
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2.发明申请Sp3 bonding boron nitride nitride thin film having self-forming surface shape being advantageous in exhibiting property of emitting electric field electrons, method for preparation thereof and use thereof 审中-公开具有自发成形表面形状的Sp 3键氮化硼氮化物薄膜有利于显示发射电场电子的性质，其制备方法及其用途公开(公告)号：US20070017700A1
公开(公告)日：2007-01-25
申请号：US10569545
申请日：2004-08-27
IPC分类号： H05K9/00
CPC分类号： H01J1/304 , C23C16/342 , C23C16/482 , H01J9/025 , H01J2201/30446 , Y10T428/24355
摘要： The object of the present invention is to provide a material excellent in field electron emission which can withstand the high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use. The solving means consists of providing a membrane body of sp3-bonded boron nitride excellent in field electron emission obtained by a method comprising the steps of introducing a reactive gas including a boron source and a nitrogen source into a reaction system; adjusting the temperature of a substrate in the reaction chamber to fall between room temperature to 1300° C.; radiating a UV beam onto the substrate with or without the concomitant existence of plasma; and forming via vapor-phase reaction a membrane on the substrate in which a surface texture allowing excellent field electron emission is formed in a self-organized manner.
摘要翻译： 本发明的目的是提供一种能够承受高强度电场的场致电子发射的材料，能够增强电子发射，从而产生高密度电流，并且在长期使用中不会降解。 解决方案包括提供通过包括以下步骤的方法获得的场致电子发射极好的sp 3+氮化硼的膜体，所述方法包括以下步骤：将包含硼源和氮源的反应性气体引入到 反应体系; 调节反应室中的基板的温度在室温至1300℃之间。 在有或没有同时存在等离子体的情况下将UV光束照射到衬底上; 并且通过气相反应在基板上形成膜，其中以自组织的方式形成允许优异的场电子发射的表面纹理。
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3.发明申请Sp3 bond boron nitride emitting light in ultraviolet region, its producing method, and functional material using same 失效Sp3键氮化硼在紫外线区域发射光，其制备方法和使用其的功能材料公开(公告)号：US20060163527A1
公开(公告)日：2006-07-27
申请号：US10518644
申请日：2003-07-01
CPC分类号： C09K11/63 , C09K11/0883 , C23C14/0026 , C23C14/0647 , C23C14/28 , C23C16/342 , C23C16/482 , C23C16/50 , C23C16/513
摘要： The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.
摘要翻译： 本发明提供由通式BN代表的具有六方晶5H或6H多型形式并具有紫外区发光特性的sp 3键合氮化硼。 其制备方法包括：将含有稀释气稀释的硼和氮的反应混合气引入反应室; 并且照射放置在所述室中的基板的表面，所述基板上的生长表面以及围绕所述生长表面的紫外线的生长间隔区域以引起气相反应，从而在所述基板上产生，沉积或生长所述氮化硼 。
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4.发明申请Boron Nitride Thin-Film Emitter and Production Method Thereof, and Electron Emitting Method Using Boron Nitride Thin-Film Emitter 失效氮化硼薄膜发射体及其制造方法以及使用氮化硼薄膜发射体的电子发射方法公开(公告)号：US20080030152A1
公开(公告)日：2008-02-07
申请号：US11665250
申请日：2005-12-21
IPC分类号： H01J11/04 , C01B21/064 , H05H1/24 , C23C8/00
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.
摘要翻译： 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每一个都包括结合氮化硼的sp 3+，sp 2+结合的硼 氮化物或其混合物，并且各自表现出场电子发射性优异的锐端形状; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。
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5.发明授权Field electron emission element, a method of manufacturing the same and a field electron emission method using such an element as well as an emission/display device employing such a field electron emission element and a method of manufacturing the same 失效场致电子发射元件，其制造方法和使用这种元件的场电子发射方法以及采用这种场致电子发射元件的发射/显示装置及其制造方法公开(公告)号：US07759662B2
公开(公告)日：2010-07-20
申请号：US11792995
申请日：2005-12-13
IPC分类号： G21K5/02
CPC分类号： H01J1/3044 , H01J9/025 , H01J2201/30446
摘要： In an electron emission method, a voltage is applied to a field electron emission element that has a boron nitride material containing crystal, formed on an element substrate to show a conical projection of the boron nitride material and shows a stable electron emitting property in an atmosphere when a voltage is applied thereto to emit electrons. An electron emission threshold of the field electron emission element falls due to formation of a surface electric dipolar layer by bringing it into contact with an operating atmosphere containing polar solvent gas when applying a voltage to the field electron emission element so as to emit electrons.
摘要翻译： 在电子发射方法中，将电压施加到具有包含晶体的氮化硼材料的场致电子发射元件，所述场致电子元件形成在元件基板上，以显示氮化硼材料的圆锥形突起并且在大气中显示出稳定的电子发射特性 当施加电压以发射电子时。 场电子发射元件的电子发射阈值由于通过在向场致发射元件施加电压而与含有极性溶剂气体的操作气氛接触时形成表面电偶极层而下降，以发射电子。
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6.发明授权Sp3 bond boron nitride emitting light in ultraviolet region, its producing method, and functional material using same 失效Sp3键氮化硼在紫外线区域发射光，其制备方法和使用其的功能材料公开(公告)号：US07419572B2
公开(公告)日：2008-09-02
申请号：US10518644
申请日：2003-07-01
IPC分类号： B01J19/08 , B01J19/12 , C01B21/064
CPC分类号： C09K11/63 , C09K11/0883 , C23C14/0026 , C23C14/0647 , C23C14/28 , C23C16/342 , C23C16/482 , C23C16/50 , C23C16/513
摘要： The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.
摘要翻译： 本发明提供由通式BN代表的具有六方晶5H或6H多型形式并具有紫外区发光特性的sp 3键合氮化硼。 其制备方法包括：将含有稀释气稀释的硼和氮的反应混合气引入反应室; 并且照射放置在所述室中的基板的表面，所述基板上的生长表面以及围绕所述生长表面的紫外线的生长间隔区域以引起气相反应，从而在所述基板上产生，沉积或生长所述氮化硼 。
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7.发明授权Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitter 失效氮化硼薄膜发射体及其制造方法以及使用氮化硼薄膜发射体的电子发射方法公开(公告)号：US07947243B2
公开(公告)日：2011-05-24
申请号：US11665250
申请日：2005-12-21
IPC分类号： C01B35/00 , C01B21/064 , C01B25/00 , C01D3/02 , H01J11/04 , C23C14/28 , C23C16/00 , B05D3/02 , B05D3/00 , H05H1/24 , B01J19/12 , H01L21/4763
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission.In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.
摘要翻译： 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每个都包含sp 3键合的氮化硼，sp2结合的氮化硼或其混合物，并且每个都显示出急剧的形状 场电子发射特性优异; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。
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8.发明申请Field Electron Emission Element, a Method of Manufacturing the Same and a Field Electron Emission Method Using Such an Element as Well as an Emission/Display Device Employing Such a Field Electron Emission Element and a Method of Manufacturing the Same 失效场电子发射元件，其制造方法和使用这种元件的场电子发射方法以及使用这种场致电子发射元件的发射/显示装置及其制造方法公开(公告)号：US20080122370A1
公开(公告)日：2008-05-29
申请号：US11792995
申请日：2005-12-13
IPC分类号： G09G3/10
CPC分类号： H01J1/3044 , H01J9/025 , H01J2201/30446
摘要： There are provided an electron emission element that operates stably in the atmosphere, a method of manufacturing the same and a method of emitting field electrons using such an element as well as an emission/display device realized by using a cold cathode electron source having a surface profile showing an excellent field electron characteristic and showing a low electron emission threshold value, a high output level and a long service life.A dilute material gas of rare gas such as argon and/or helium, hydrogen or a mixture gas thereof is used. An electron emission element substrate (4) is held to a temperature level between room temperature and 1,300° C. in an atmosphere where boron source material gas and nitride source material gas are introduced to 0.0001 to 100 volume % relative to the dilute material gas under pressure of 0.001 to 760 Torr, causing plasma to be generated typically by means of a plasma torch (7) or without causing plasma to be generated, and irradiated with ultraviolet rays by means of an excimer ultraviolet laser (6) or the like to make the material gas to react so as to form a boron nitride material containing crystal that has a pointed profile and is expressed by BN on the element substrate in a self-forming manner. The produced boron nitride material operates as field electron emission element that emits electrons stably in the atmosphere when a voltage is applied thereto. The reaction product is taken out from the reaction vessel (1) with the substrate after the end of the reaction and a cold cathode type emission/display device is assembled by using the reaction product as field electron emission source.
摘要翻译： 提供了在大气中稳定运行的电子发射元件，其制造方法和使用这种元件发射场电子的方法以及通过使用具有表面的冷阴极电子源实现的发射/显示装置 表现出优异的场电子特性，显示出低电子发射阈值，高输出电平和长使用寿命。 使用诸如氩和/或氦，氢气或其混合气体的稀有气体的稀材料气体。 在硼源材料气体和氮化物源材料气体引入的气氛中相对于稀释材料气体将电子发射元件基板（4）保持在室温至1300℃的温度水平， 压力为0.001至760托，通常通过等离子体焰炬（7）产生等离子体，或不产生等离子体，并通过受激准分子紫外线激光（6）等照射紫外线， 所述材料气体反应以形成含有尖锐轮廓的含有晶体的氮化硼材料，并且以自形成方式在BN上在元件基板上表示。 所产生的氮化硼材料作为场电子发射元件工作，当施加电压时，其在大气中稳定地发射电子。 在反应结束后，用反应容器（1）从反应容器（1）中取出反应产物，并使用反应产物作为场电子发射源组装冷阴极发射/显示装置。
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9.发明授权Bus interface structure and system for controlling the bus interface structure 失效总线接口结构和系统，用于控制总线接口结构
公开(公告)号：US5594878A
公开(公告)日：1997-01-14
申请号：US392604
申请日：1995-02-22
CPC分类号： G06F13/1678
摘要： A bus interface system has a bus interface, a common memory, a local bus, and a memory controller for use in a memory control. The memory controller has a buffer and is connected to the local bus. The bus interface has a burst disassembling control circuit which disassembles burst transfer data into one or a plurality of block transfers and one or a plurality of one-word transfers, which are supplied to the memory controller so that when the bus interface receives all requested data received from the common memory during a read access, the bus interface adds information on a destination device, connected to a system bus, to all the requested data and sends all the requested data with that information to the destination device via the system bus.
摘要翻译： 总线接口系统具有总线接口，公共存储器，本地总线和用于存储器控制的存储器控制器。 存储器控制器具有缓冲器并连接到本地总线。 总线接口具有突发分解控制电路，其将突发传输数据分解成一个或多个块传输和一个或多个单字传输，其被提供给存储器控制器，使得当总线接口接收到所有请求的数据时 在读取访问期间从公共存储器接收到总线接口，将连接到系统总线的目的地设备上的信息添加到所有所请求的数据，并且通过该系统总线将具有该信息的所有请求的数据发送到目的地设备。
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公开(公告)号：US06151893A
公开(公告)日：2000-11-28
申请号：US155646
申请日：1998-10-02
CPC分类号： F01N13/1816 , F01N13/1811 , F16L27/1004 , F16L27/11 , F16L27/111 , F16L51/027
摘要： A flexible tube for an automobile exhaust system which has a bellow assembly to absorb the first exhaust pipe and the second exhaust pipe for the an exhaust system having a cylindrical outer cover (5) made of plate to cover the outer periphery of the bellows (3)1 the first collar (7') and the second collar (7") with the risers (7a', 7a") bent toward the inner surface (5a) of the outer cover (5); the first elongation displacement stopper member (6') and the second elongation member displacement stopper member (6") respectively formed by bending the inner side of the outer cover (5); and the first elastic stopper member (8') and the second elastic stopper member (8") provided at the risers (7a', 7a") of both collars (7', 7"). As a further modification, the second outer cover (9) may be provided inside of the outer cover (5) to form displacement stoppers (9a, 9b) by bending the both end portions of the second outer cover.
摘要翻译： PCT No.PCT / JP97 / 00263 Sec。 371日期：1998年10月2日 102（e）日期1998年10月2日PCT 1997年2月3日提交PCT公布。 第WO97 / 28359号公报 日期1997年8月7日用于汽车排气系统的柔性管，其具有用于吸收第一排气管的波纹管组件和用于排气系统的第二排气管，该排气系统具有由板制成的圆柱形外盖（5）以覆盖外周 波纹管（3）1具有朝着外盖（5）的内表面（5a）弯曲的第一凸缘（7'）和第二凸缘（7“），第二凸缘（7'）和第二凸缘（7”）。 分别通过弯曲外盖（5）的内侧而形成的第一伸长位移止挡构件（6'）和第二延伸构件位移限制构件（6“）; 以及设置在两个轴环（7'，7“）的立管（7a'，7a”）的第一弹性止动构件（8'）和第二弹性止动构件（8“）。 作为进一步的改进，第二外盖（9）可以设置在外盖（5）的内部，以通过弯曲第二外盖的两个端部而形成位移限制器（9a，9b）。
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