Method and apparatus for providing thermal wear leveling

    公开(公告)号:US11551990B2

    公开(公告)日:2023-01-10

    申请号:US15674607

    申请日:2017-08-11

    摘要: Exemplary embodiments provide thermal wear spreading among a plurality of thermal die regions in an integrated circuit or among dies by using die region wear-out data that represents a cumulative amount of time each of a number of thermal die regions in one or more dies has spent at a particular temperature level. In one example, die region wear-out data is stored in persistent memory and is accrued over a life of each respective thermal region so that a long term monitoring of temperature levels in the various die regions is used to spread thermal wear among the thermal die regions. In one example, spreading thermal wear is done by controlling task execution such as thread execution among one or more processing cores, dies and/or data access operations for a memory.

    DEFENSE MECHANISM FOR NON-VOLATILE MEMORY BASED MAIN MEMORY

    公开(公告)号:US20210191797A1

    公开(公告)日:2021-06-24

    申请号:US16723855

    申请日:2019-12-20

    摘要: A method includes receiving a write request for writing incoming data to a target memory line and, in response to the write request, comparing the incoming data with existing data in the target memory line to determine a number of a first type of state transition. The method further includes, in response to determining that the number of the first type of state transition for the write request exceeds a threshold, prior to writing the incoming data to the target memory line, storing adjacent data from each of a set of memory lines adjacent to the target memory line, and after writing the incoming data to the target memory line, writing the stored data to the set of adjacent memory lines.

    METHOD AND APPARATUS FOR PROVIDING THERMAL WEAR LEVELING

    公开(公告)号:US20190051576A1

    公开(公告)日:2019-02-14

    申请号:US15674607

    申请日:2017-08-11

    摘要: Exemplary embodiments provide thermal wear spreading among a plurality of thermal die regions in an integrated circuit or among dies by using die region wear-out data that represents a cumulative amount of time each of a number of thermal die regions in one or more dies has spent at a particular temperature level. In one example, die region wear-out data is stored in persistent memory and is accrued over a life of each respective thermal region so that a long term monitoring of temperature levels in the various die regions is used to spread thermal wear among the thermal die regions. In one example, spreading thermal wear is done by controlling task execution such as thread execution among one or more processing cores, dies and/or data access operations for a memory.

    Method and apparatus for providing thermal wear leveling

    公开(公告)号:US12068215B2

    公开(公告)日:2024-08-20

    申请号:US18152022

    申请日:2023-01-09

    摘要: Exemplary embodiments provide thermal wear spreading among a plurality of thermal die regions in an integrated circuit or among dies by using die region wear-out data that represents a cumulative amount of time each of a number of thermal die regions in one or more dies has spent at a particular temperature level. In one example, die region wear-out data is stored in persistent memory and is accrued over a life of each respective thermal region so that a long term monitoring of temperature levels in the various die regions is used to spread thermal wear among the thermal die regions. In one example, spreading thermal wear is done by controlling task execution such as thread execution among one or more processing cores, dies and/or data access operations for a memory.

    Defense mechanism for non-volatile memory based main memory

    公开(公告)号:US11416323B2

    公开(公告)日:2022-08-16

    申请号:US16723855

    申请日:2019-12-20

    摘要: A method includes receiving a write request for writing incoming data to a target memory line and, in response to the write request, comparing the incoming data with existing data in the target memory line to determine a number of a first type of state transition. The method further includes, in response to determining that the number of the first type of state transition for the write request exceeds a threshold, prior to writing the incoming data to the target memory line, storing adjacent data from each of a set of memory lines adjacent to the target memory line, and after writing the incoming data to the target memory line, writing the stored data to the set of adjacent memory lines.