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公开(公告)号:US12185433B2
公开(公告)日:2024-12-31
申请号:US18197657
申请日:2023-05-15
Applicant: Applied Materials, Inc.
Inventor: Denis Martin Koosau , Suresh Gupta , Martin Perez-Guzman , Ashish Goel
IPC: H05B3/26 , H01L21/67 , H01L21/683
Abstract: A substrate support assembly includes a plate structure and an insulator structure. The plate structure includes an upper plate and a lower plate. The lower plate includes a lower plate structure surface. The insulator structure is disposed beneath the plate structure. The insulator structure includes a lower insulator structure surface and an upper insulator structure surface. A first portion of the upper insulator structure surface is recessed with respect to a second portion of the upper insulator structure surface. The first portion of the upper insulator structure surface forms an interior volume with the lower plate structure surface.
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公开(公告)号:US11600476B2
公开(公告)日:2023-03-07
申请号:US17503994
申请日:2021-10-18
Applicant: Applied Materials, Inc.
Inventor: Anantha K. Subramani , Deepak Jadhav , Ashish Goel , Hanbing Wu , Prashanth Kothnur , Chi Hong Ching
Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
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公开(公告)号:US20190352774A1
公开(公告)日:2019-11-21
申请号:US16395015
申请日:2019-04-25
Applicant: Applied Materials, Inc.
Inventor: Kelvin Chan , Yang Guo , Ashish Goel , Anantha Subramani , Philip Allan Kraus
Abstract: Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.
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公开(公告)号:US20180163306A1
公开(公告)日:2018-06-14
申请号:US15839018
申请日:2017-12-12
Applicant: Applied Materials, Inc.
Inventor: Bharath Swaminathan , John Mazzocco , Hanbing Wu , Ashish Goel , Anantha K. Subramani
IPC: C23C16/46 , H01L21/687 , H01L21/67 , C23C16/455
CPC classification number: C23C16/466 , C23C16/45527 , C23C16/4586 , H01L21/67098 , H01L21/67109 , H01L21/67167 , H01L21/67184 , H01L21/67201 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H01L21/68785
Abstract: A cooling chamber comprising a support plate connected to a cryo pump and turbo pump, a clamp ring with a plurality of clamp pads on the bottom thereof where each clamp pad has a beveled surface directed downward and a lift plate to move the clamp ring from a clamp position to a loading position are described. Cluster tools incorporating the cooling chamber and methods of using the cooling chamber are also described.
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公开(公告)号:US11183375B2
公开(公告)日:2021-11-23
申请号:US14606367
申请日:2015-01-27
Applicant: Applied Materials, Inc.
Inventor: Anantha K. Subramani , Deepak Jadhav , Ashish Goel , Hanbing Wu , Prashanth Kothnur , Chi Hong Ching
Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
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公开(公告)号:US11101117B2
公开(公告)日:2021-08-24
申请号:US16573265
申请日:2019-09-17
Applicant: APPLIED MATERIALS, INC.
Inventor: Anantha K. Subramani , Hanbing Wu , Wei W. Wang , Ashish Goel , Srinivas Guggilla , Lavinia Nistor
Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.
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公开(公告)号:US10957565B2
公开(公告)日:2021-03-23
申请号:US16941405
申请日:2020-07-28
Applicant: Applied Materials, Inc.
Inventor: Shimin Mao , Simon Huang , Ashish Goel , Anantha Subramani , Philip Allan Kraus
Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.
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公开(公告)号:US12012652B2
公开(公告)日:2024-06-18
申请号:US16395015
申请日:2019-04-25
Applicant: Applied Materials, Inc.
Inventor: Kelvin Chan , Yang Guo , Ashish Goel , Anantha Subramani , Philip Allan Kraus
CPC classification number: C23C16/4402 , C23C14/34 , C23C16/402 , C23C16/405 , C23C16/4409 , C23C28/042 , H01J37/3244 , H01J37/32715 , H01J37/32871 , H01L21/02164 , H01L21/02271 , H01L21/28568 , H01J2237/20235 , H01J2237/3321 , H01L21/02274 , H01L21/0228
Abstract: Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.
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公开(公告)号:US20230380016A1
公开(公告)日:2023-11-23
申请号:US18197658
申请日:2023-05-15
Applicant: Applied Materials, Inc.
Inventor: Denis Martin Koosau , Suresh Gupta , Martin Perez-Guzman , Ashish Goel
IPC: H05B3/26
CPC classification number: H05B3/265
Abstract: A substrate support assembly includes a puck, comprising a heating element, a power distribution assembly, and an insulator comprising at least one of alumina or thermoplastic disposed between the puck and the power distribution assembly, wherein an electrical connection between the heating element and the power distribution assembly comprises a terminal and a conical washer.
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公开(公告)号:US10468238B2
公开(公告)日:2019-11-05
申请号:US15240927
申请日:2016-08-18
Applicant: APPLIED MATERIALS, INC.
Inventor: Anantha K. Subramani , Hanbing Wu , Wei W. Wang , Ashish Goel , Srinivas Guggilla , Lavinia Nistor
Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.
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