公开(公告)号：US20170098549A1

公开(公告)日：2017-04-06

申请号：US15279058

申请日：2016-09-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Ankur AGARWAL

IPC: H01L21/3065 ,  H01L21/311 ,  C23C16/458 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/30655 ,  B05D1/62 ,  B05D5/083 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32715 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/67069

Abstract: Methods and apparatus for processing substrates are provided. In some embodiments, methods of processing substrates includes: (a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

公开(公告)号：US20180254171A1

公开(公告)日：2018-09-06

申请号：US15449456

申请日：2017-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： WONSEOK LEE ,  KARTIK RAMASWAMY ,  Ankur AGARWAL ,  Haitao WANG

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833

Abstract: Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.