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    METHODS AND APPARATUS FOR ETCHING SEMICONDUCTOR STRUCTURES
    1.
    发明申请
    METHODS AND APPARATUS FOR ETCHING SEMICONDUCTOR STRUCTURES 有权

    公开(公告)号：US20210142987A1

    公开(公告)日：2021-05-13

    申请号：US17151349

    申请日：2021-01-18

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Daisuke SHIMIZU ,  Taiki HATAKEYAMA ,  Sean S. KANG ,  Katsumasa KAWASAKI ,  Chunlei ZHANG

    IPC: H01J37/32 ,  H01L21/67

    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
    2.
    发明申请
    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 有权

    公开(公告)号：US20220130642A1

    公开(公告)日：2022-04-28

    申请号：US17078728

    申请日：2020-10-23

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Katsumasa KAWASAKI ,  Kartik RAMASWAMY ,  Yue GUO ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Jorge ZANINOVICH ,  Smbat KARTASHYAN

    IPC: H01J37/32 ,  H01J37/244 ,  G01R25/02

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a first voltage/current (V/I) probe configured to connect to an input side of a matching network of the processing chamber and a second V/I probe configured to connect to an output side of the matching network and a processor coupled to the first V/I probe and the second V/I probe and configured to, based on a phase gap between a V and I of an RF signal detected by at least one of the first V/I probe or the second V/I probe at a target frequency, detect a minimum phase gap between the V and I, and control at least one of impedance tuning of the matching network or process control of the processing chamber using at least one of a peak or RMS of V, I and phase measured at the target frequency or under sweeping frequency.

    RF POWER DELIVERY REGULATION FOR PROCESSING SUBSTRATES
    4.
    发明申请
    RF POWER DELIVERY REGULATION FOR PROCESSING SUBSTRATES 审中-公开

    公开(公告)号：US20170358428A1

    公开(公告)日：2017-12-14

    申请号：US15689529

    申请日：2017-08-29

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Katsumasa KAWASAKI ,  Justin PHI ,  Sergio SHOJI

    IPC: H01J37/32

    CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/334

    Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

    METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES
    6.
    发明申请
    METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES 有权
    使用同步RF脉冲蚀刻材料的方法

    公开(公告)号：US20150072530A1

    公开(公告)日：2015-03-12

    申请号：US14020773

    申请日：2013-09-06

    Applicant: Applied Materials, Inc.

    Inventor： Jong Mun KIM ,  Daisuke SHIMIZU ,  Katsumasa KAWASAKI ,  Sergio Fukuda SHOJI

    IPC: H01L21/3065 ,  H01L21/311

    CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/31116

    Abstract: Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

    Abstract translation: 本发明的实施例提供了使用同步RF脉冲来蚀刻材料层的方法。 在一个实施例中，一种方法包括将气体混合物提供到处理室中，在第一时间点将第一RF源功率施加到处理室以在气体混合物中形成等离子体，在第二时间施加第一RF偏置功率 指向处理室，以对基板执行蚀刻处理，在第三时间点关闭第一RF偏置功率，同时从第一时间点到第二时间点和第三时间点持续保持第一RF源功率接通，以及 在第四时间点关闭第一RF源功率，同时从第一时间点到第二，第三和第四时间点连续地将气体混合物提供到处理室。

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
    7.
    发明公开
    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开

    公开(公告)号：US20230343555A1

    公开(公告)日：2023-10-26

    申请号：US17726930

    申请日：2022-04-22

    Applicant: Applied Materials, Inc.

    Inventor： Yue GUO ,  Katsumasa KAWASAKI ,  Kartik RAMASWAMY ,  Yang YANG ,  Nicolas John BRIGHT

    IPC: H01J37/32 ,  H03H7/38

    CPC classification number: H01J37/32146 ,  H01J37/32935 ,  H01J37/32183 ,  H03H7/38 ,  H01J2237/24564 ,  H01J2237/334

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.

    RF PULSE REFLECTION REDUCTION FOR PROCESSING SUBSTRATES
    8.
    发明申请
    RF PULSE REFLECTION REDUCTION FOR PROCESSING SUBSTRATES 有权

    公开(公告)号：US20170103873A1

    公开(公告)日：2017-04-13

    申请号：US15212879

    申请日：2016-07-18

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Katsumasa KAWASAKI

    IPC: H01J37/32

    CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/3299

    Abstract: Methods and systems for RF pulse reflection reduction in process chambers are provided herein. In some embodiments, a method includes (a) providing a plurality of pulsed RF power waveforms from a plurality of RF generators during a first time period, (b) determining an initial reflected power profile for each of the plurality of pulsed RF power waveforms, (c) for each of the plurality of pulsed RF power waveforms, determining a highest level of reflected power, and controlling at least one of a match network or the RF generator to reduce the highest level of reflected power, (d) determining an adjusted reflected power profile for each of the plurality of pulsed RF power waveforms and (e) repeating (c) and (d) until the adjusted reflected power profile for each of the plurality of pulsed RF power waveforms is within a threshold tuning range.

    RF POWER DELIVERY REGULATION FOR PROCESSING SUBSTRATES
    9.
    发明申请
    RF POWER DELIVERY REGULATION FOR PROCESSING SUBSTRATES 有权

    公开(公告)号：US20170098527A1

    公开(公告)日：2017-04-06

    申请号：US14886891

    申请日：2015-10-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Katsumasa KAWASAKI ,  Justin PHI ,  Sergio SHOJI

    IPC: H01J37/32

    CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/334

    Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

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