公开(公告)号：US20030116427A1

公开(公告)日：2003-06-26

申请号：US10202778

申请日：2002-07-25

申请人： Applied Materials, Inc.

发明人： Peijun Ding ,  Zheng Xu ,  Roderick C. Mosely ,  Suraj Rengarajan ,  Nirmalya Maity ,  Daniel A. Carl ,  Barry Chin ,  Paul F. Smith ,  Darryl Angelo ,  Anish Tolia ,  Jianming Fu ,  Fusen Chen ,  Praburam Gopalraja ,  Xianmin Tang ,  John C. Forster

IPC分类号： C23C014/32 ,  C23C014/34

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在同一个房间。 此外，底部覆盖可以通过ICP再溅射而变薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。

公开(公告)号：US20020084181A1

公开(公告)日：2002-07-04

申请号：US10037172

申请日：2001-11-07

申请人： Applied Materials, Inc.

发明人： Praburam Gopalraja ,  Sergio Edelstein ,  Avi Tepman ,  Peijun Ding ,  Debabrata Ghosh ,  Nirmalya Maity

IPC分类号： C23C014/35 ,  C23C014/44

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408

摘要： The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

摘要翻译： 本发明提供一种通过PVD在衬底上实现适形步骤覆盖的方法和装置。 目标物提供用等离子体溅射然后电离的材料源。 通过使用例如感应线圈维持足够密集的等离子体来促进离子化。 然后将电离材料沉积在衬底上，其被偏压到负电压。 在处理期间提供给目标的信号包括负电压部分和零电压部分。 在负电压部分期间，离子被吸引到靶以引起溅射。 在零电压部分期间，终止来自靶的溅射，同时衬底上的偏压导致反溅射。 因此，负电压部分和零电压部分交替地在溅射步骤和反向溅射步骤之间循环。 可以通过调节信号的频率，室压力，提供给每个支撑构件的功率和其他工艺参数来控制膜的质量和均匀性。

公开(公告)号：US20030216035A1

公开(公告)日：2003-11-20

申请号：US10439021

申请日：2003-05-14

申请人： Applied Materials, Inc.

发明人： Suraj Rengarajan ,  Michael Miller ,  Darryl Angelo ,  Nirmalya Maity ,  Peijun Ding

IPC分类号： C23C014/00 ,  C23C014/32 ,  H01L021/4763

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/185 ,  C23C14/5873 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76865

摘要： A physical vapor deposition chamber is employed to sputter-deposit a layer of material, such as a tantalum or tantalum nitride barrier layer, in a via formed on a semiconductor substrate. After the sputter-deposition step, a second processing step is performed in which material from the barrier layer is back-sputtered from the bottom wall of the via. The second step is performed at a high pedestal bias and with substantial power applied to the sputtering target. The power applied to the sputtering target in the second step may be at a higher level than the power applied to the sputtering target in the first step. Numerous other aspects are provided.

摘要翻译： 物理气相沉积室用于在半导体衬底上形成的通孔中溅射沉积诸如钽或氮化钽阻挡层的材料层。 在溅射沉积步骤之后，执行第二处理步骤，其中来自阻挡层的材料从通孔的底壁反溅射。 第二步是在高基座偏压下进行，并且施加到溅射靶的大量功率。 在第二步骤中施加到溅射靶的功率可以处于比在第一步骤中施加到溅射靶的功率更高的水平。 提供了许多其他方面。

公开(公告)号：US20030217913A1

公开(公告)日：2003-11-27

申请号：US10152494

申请日：2002-05-21

申请人： APPLIED MATERIALS, INC.

发明人： Ilyoung Richard Hong ,  James Tsung ,  Daniel Clarence Lubben ,  Peijun Ding ,  Nirmalya Maity

IPC分类号： C23C014/35

CPC分类号： H01J37/3455 ,  C23C14/345 ,  C23C14/35 ,  C23C14/355 ,  H01J37/3405 ,  H01J37/3408

摘要： A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

摘要翻译： 小型磁体组件在逆行星行星或行星路径周围围绕目标物的背面进行扫描，等离子体溅射包括围绕靶的中心轴线的轨道旋转和围绕目标中心轴线旋转的另一轴线的行星旋转。 磁铁组件通过目标中心，从而允许全目标覆盖。 相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。 齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。 带式行星机构包括固定中心绞盘，支撑磁体组件的从动轮和缠绕在其上的带。