METHOD AND APPARATUS FOR FORMING POROUS ADVANCED POLISHING PADS USING AN ADDITIVE MANUFACTURING PROCESS

    公开(公告)号:US20170203408A1

    公开(公告)日:2017-07-20

    申请号:US15287665

    申请日:2016-10-06

    CPC classification number: B24B37/24

    Abstract: Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, addition polymer precursor compounds, catalysts, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one polymer precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions. Embodiments of the disclosure further provide a polishing pad with polymeric layers that may be interpenetrating polymer networks.

    METHOD AND APPARATUS FOR CMP CONDITIONING
    7.
    发明申请
    METHOD AND APPARATUS FOR CMP CONDITIONING 审中-公开
    用于CMP调节的方法和装置

    公开(公告)号:US20140295742A1

    公开(公告)日:2014-10-02

    申请号:US14301910

    申请日:2014-06-11

    Inventor: Rajeev BAJAJ

    CPC classification number: B24B53/017 B23K26/3576 B24B53/095

    Abstract: A CMP system has a polishing table for supporting a CMP pad which a semiconductor wafer is polished. The CMP system has a laser source configured to regenerate the CMP pad through a conditioning process while the CMP pad is disposed on the polishing table.

    Abstract translation: CMP系统具有用于支撑抛光半导体晶片的CMP焊盘的抛光台。 CMP系统具有被配置为通过调节过程再生CMP垫的激光源,同时将CMP垫设置在抛光台上。

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