公开(公告)号：US20030211244A1

公开(公告)日：2003-11-13

申请号：US10409887

申请日：2003-04-08

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Y. Yieh ,  Son Van Nguyen ,  Lester A. D'Cruz ,  Troy Kim ,  Dian Sugiarto ,  Peter Wai-Man Lee ,  Hichem M'Saad ,  Melissa M. Tam ,  Yi Zheng ,  Srinivas D. Nemani

IPC: B05D005/12 ,  C23C016/00 ,  B05D003/00

CPC classification number: C09D4/00 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02351 ,  H01L21/3122 ,  C08G77/00

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.

Abstract translation: 通过使包含一种或多种有机硅化合物和一种或多种氧化性气体的气体混合物反应，提供介电常数为约3.0以下，优选约2.5以下的低介电常数膜的方法。 一方面，有机硅化合物包含具有一个或多个不饱和碳 - 碳键的烃组分，另一方面，气体混合物还包含一种或多种具有一个或多个不饱和碳 - 碳键的脂族烃化合物。 沉积后对低介电常数膜进行后处理。 一方面，后处理是电子束处理，另一方面，后处理是退火处理。

公开(公告)号：US20030186000A1

公开(公告)日：2003-10-02

申请号：US10115832

申请日：2002-04-02

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC: H05H001/24

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of the film.

Abstract translation: 提供了一种沉积具有改进的硬度和弹性模量的低介电常数膜的方法。 一方面，该方法包括沉积具有硅，碳和氢的低介电常数膜，然后在足以提高膜硬度的条件下用氦，氢或其混合物的等离子体处理沉积膜。

公开(公告)号：US20040157453A1

公开(公告)日：2004-08-12

申请号：US10745344

申请日：2003-12-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

Abstract: A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

Abstract translation: 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US20030194880A1

公开(公告)日：2003-10-16

申请号：US10124655

申请日：2002-04-16

Applicant: Applied Materials, Inc.

Inventor： Vinita Singh ,  Srinivas D. Nemani ,  Yi Zheng ,  Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

Abstract translation: 通过混合一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物和一种或多种低分子量脂族烃化合物，提供介电常数为约3.5或更低的低介电常数膜的沉积方法。 一方面，包含一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物，一种或多种脂族烃化合物，一种或多种氧化性气体和载气的气体混合物在足以沉积低介电常数的条件下反应 薄膜在基材表面上。

公开(公告)号：US20030194495A1

公开(公告)日：2003-10-16

申请号：US10121284

申请日：2002-04-11

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li Qun Xia ,  Ellie Yieh

IPC: C23C016/00 ,  B05D003/02

CPC classification number: H01L21/3122 ,  C09D4/00 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  C08G77/00

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by using one or more cyclic organic precursors and one or more aliphatic precursors. In one aspect, a cyclic organosilicon compound, an aliphatic organosilicon, and an aliphatic hydrocarbon compound are reacted with an oxidizing gas at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. The cyclic organosilicon compound includes at least one silicon-carbon bond. The aliphatic organosilicon compound includes a silicon-hydrogen bond or a silicon-oxygen bond.

Abstract translation: 通过使用一种或多种环状有机前体和一种或多种脂肪族前体，提供介电常数为约3.0或更小，优选约2.5或更小的低介电常数膜的方法。 一方面，环状有机硅化合物，脂肪族有机硅和脂族烃化合物在足以在半导体衬底上沉积低介电常数膜的条件下与氧化性气体反应。 环状有机硅化合物包括至少一个硅 - 碳键。 脂族有机硅化合物包括硅 - 氢键或硅 - 氧键。

公开(公告)号：US20030162410A1

公开(公告)日：2003-08-28

申请号：US10375852

申请日：2003-02-25

Applicant: Applied Materials, Inc.

Inventor： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

Abstract translation: 氧化硅层通过有机硅化合物的等离子体增强分解产生，以沉积碳原子量至少为1％的膜。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US20040137757A1

公开(公告)日：2004-07-15

申请号：US10342085

申请日：2003-01-13

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Juan C. Rocha-Alvarez ,  Li-Qun Xia

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76826

Abstract: One embodiment of the present invention is a method for depositing low-k dielectric films that includes steps of: (a) CVD-depositing a low-k dielectric film; and (b) plasma treating the CVD-deposited, low-k dielectric film.

Abstract translation: 本发明的一个实施例是一种用于沉积低k电介质膜的方法，包括以下步骤：（a）CVD沉积低k电介质膜; 和（b）等离子体处理CVD沉积的低k电介质膜。

公开(公告)号：US20040101632A1

公开(公告)日：2004-05-27

申请号：US10302375

申请日：2002-11-22

Applicant: Applied Materials, Inc.

Inventor： Wen H. Zhu ,  Tzu-Fang Huang ,  Lihua Li ,  Li-Qun Xia ,  Ellie Y. Yieh

IPC: C23C016/00 ,  B05D003/00

CPC classification number: C23C16/401 ,  C23C16/56

Abstract: A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen in a chemical vapor deposition chamber. The method further includes exposing the low dielectric constant film to an electron beam having an exposure dose less than about 400 nullC/cm2 at conditions sufficient to increase the hardness of the low dielectric constant film.

Abstract translation: 一种在基板上沉积低介电常数膜的方法。 该方法包括在化学气相沉积室中沉积包含硅，碳，氧和氢的低介电常数膜。 该方法还包括在足以增加低介电常数膜的硬度的条件下将低介电常数膜暴露于曝光量小于约400μC/ cm 2的电子束。

公开(公告)号：US20040137758A1

公开(公告)日：2004-07-15

申请号：US10342077

申请日：2003-01-13

Applicant: Applied Materials,Inc.

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Juan Carlos Rocha-Alvarez ,  Maosheng Zhao

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.

Abstract translation: 一种在基板上沉积低介电常数膜的方法。 该方法包括在设置在化学气相沉积室中的衬底上沉积包含硅，碳，氧和氢的低介电常数膜，将包含含氢气体的气体混合物引入化学气相沉积室，形成等离子体 使用射频功率接近低介电常数膜的气体混合物，并且将至少一个基板或气体分布板施加直流偏压以固化低介电常数膜。

公开(公告)号：US20040137756A1

公开(公告)日：2004-07-15

申请号：US10342079

申请日：2003-01-13

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia

IPC: H01L021/4763

CPC classification number: H01L21/76829 ,  C23C16/325 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for processing a substrate including providing a processing gas comprising hydrogen gas and an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract translation: 提供了一种处理衬底的方法，包括向处理室提供包括氢气和包含苯基的有机硅化合物的处理气体，并使处理气体反应沉积用作大马士革中的阻挡层的低k碳化硅阻挡层 或具有低k电介质材料的双镶嵌应用。