公开(公告)号：US20030186000A1

公开(公告)日：2003-10-02

申请号：US10115832

申请日：2002-04-02

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC: H05H001/24

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of the film.

Abstract translation: 提供了一种沉积具有改进的硬度和弹性模量的低介电常数膜的方法。 一方面，该方法包括沉积具有硅，碳和氢的低介电常数膜，然后在足以提高膜硬度的条件下用氦，氢或其混合物的等离子体处理沉积膜。

公开(公告)号：US20030077857A1

公开(公告)日：2003-04-24

申请号：US10293096

申请日：2002-11-12

Applicant: Applied Materials, Inc.

Inventor： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC: H01L021/8238

CPC classification number: H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

Abstract translation: 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US20030013295A1

公开(公告)日：2003-01-16

申请号：US10236800

申请日：2002-09-06

Applicant: Applied Materials, Inc.

Inventor： Li-Qun Xia ,  Paul Fisher ,  Margaret Lynn Gotuaco ,  Frederic Gaillard ,  Ellie Yieh

IPC: H01L021/4763

CPC classification number: H01L21/02126 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76813 ,  H01L21/76828 ,  H01L21/76829

Abstract: A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.

公开(公告)号：US20040157453A1

公开(公告)日：2004-08-12

申请号：US10745344

申请日：2003-12-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

Abstract: A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

Abstract translation: 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US20030194880A1

公开(公告)日：2003-10-16

申请号：US10124655

申请日：2002-04-16

Applicant: Applied Materials, Inc.

Inventor： Vinita Singh ,  Srinivas D. Nemani ,  Yi Zheng ,  Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

Abstract translation: 通过混合一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物和一种或多种低分子量脂族烃化合物，提供介电常数为约3.5或更低的低介电常数膜的沉积方法。 一方面，包含一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物，一种或多种脂族烃化合物，一种或多种氧化性气体和载气的气体混合物在足以沉积低介电常数的条件下反应 薄膜在基材表面上。

公开(公告)号：US20030104320A1

公开(公告)日：2003-06-05

申请号：US10006563

申请日：2001-11-30

Applicant: Applied Materials, Inc.

Inventor： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC: G03C005/00

CPC classification number: H01L21/02063 ,  G03F7/427 ,  H01L21/31138

Abstract: A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150null C. and about 450null C., preferably about 250null C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

Abstract translation: 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US20020164429A1

公开(公告)日：2002-11-07

申请号：US09791989

申请日：2001-02-22

Applicant: Applied Materials, Inc.

Inventor： Frederic Gaillard ,  Li-Qun Xia ,  Jen Shu ,  Ellie Yieh ,  Tian-Hoe Lim

IPC: C23C016/00 ,  B05D003/02 ,  H05H001/24

CPC classification number: B05D1/60 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633

Abstract: An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.

Abstract translation: 本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。 一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。 转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。 含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。 另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。 此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。 还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。 另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。 此外，提供了沉积在转化和氢等离子体处理层上的覆盖层。

公开(公告)号：US20040029400A1

公开(公告)日：2004-02-12

申请号：US10632179

申请日：2003-07-31

Applicant: Applied Materials, Inc.

Inventor： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

IPC: H01L021/31

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76828

Abstract: A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.

公开(公告)号：US20030207033A1

公开(公告)日：2003-11-06

申请号：US10140324

申请日：2002-05-06

Applicant: Applied Materials, Inc.

Inventor： Kang Sub Yim ,  Soovo Sen ,  Dian Sugiarto ,  Peter Lee ,  Ellie Yieh

IPC: C23F001/00 ,  C23C016/00 ,  C23C016/40

CPC classification number: C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

Abstract: A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

Abstract translation: 通常提供适于将气体分配到处理室中的喷头以及在基板上形成电介质层的方法。 在一个实施例中，用于在处理室中分配气体的喷头包括联接在盘和安装凸缘之间的环形体。 盘具有穿过其中形成的多个孔。 唇缘从盘的与环形体相对的一侧延伸并远离安装法兰。 喷头可以用于在基底上沉积电介质材料。 在一个实施例中，氮化硅和氧化硅层形成在衬底上，而不用利用本发明的喷头从处理室中移除衬底。

公开(公告)号：US20030129827A1

公开(公告)日：2003-07-10

申请号：US10196498

申请日：2002-07-15

Applicant: Applied Materials, Inc.

Inventor： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC: H01L021/4763

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Abstract translation: 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。