公开(公告)号：US20160258055A1

公开(公告)日：2016-09-08

申请号：US15157936

申请日：2016-05-18

Applicant: Asahi Glass Company, Limited

Inventor： Hiroaki IWAOKA ,  Atsushi SEKI ,  Kousuke CHONAN ,  Reo USUI ,  Toshio SUZUKI ,  Tomomi ABE

IPC: C23C16/40 ,  C09D1/00 ,  C03C17/34

CPC classification number: C23C16/405 ,  C03C17/2456 ,  C03C17/3417 ,  C03C2217/212 ,  C03C2217/73 ,  C03C2217/77 ,  C03C2218/1525 ,  C09D1/00

Abstract: The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).

Abstract translation: 本发明涉及通过使用大气压CVD法在基板上形成TiO 2薄膜的方法，其中原料气体含有四异丙醇钛（TTIP）和在100℃的温度范围内可汽化的金属M的氯化物 （TTIP）（金属M（mol％）/ TTIP（摩尔％））的氯化物的浓度比，金属M的氯化物的量为0.01〜0.18。

公开(公告)号：US20180122838A1

公开(公告)日：2018-05-03

申请号：US15835030

申请日：2017-12-07

Applicant: Asahi Glass Company, Limited

Inventor： Kazutaka ONO ,  Takatoshi YAOITA ,  Reo USUI ,  Kenichi EBATA ,  Jun AKIYAMA

IPC: H01L27/12 ,  B32B43/00 ,  B32B17/00 ,  B32B7/12 ,  C03C3/091 ,  H01L29/786 ,  H01L21/683

CPC classification number: H01L27/1266 ,  B32B7/06 ,  B32B7/12 ,  B32B17/00 ,  B32B17/06 ,  B32B38/10 ,  B32B43/006 ,  B32B2307/30 ,  B32B2307/308 ,  B32B2307/546 ,  B32B2307/734 ,  B32B2315/08 ,  B32B2457/00 ,  C03C3/091 ,  C03C27/10 ,  G02F1/133516 ,  G02F1/1341 ,  G02F1/1368 ,  G02F2001/13415 ,  G02F2202/104 ,  H01L21/6835 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/78672 ,  H01L2221/6835 ,  H01L2221/68386

Abstract: A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

公开(公告)号：US20170330913A1

公开(公告)日：2017-11-16

申请号：US15666038

申请日：2017-08-01

Applicant: Asahi Glass Company, Limited

Inventor： Takeshi TOMIZAWA ,  Yuki AOSHIMA ,  Reo USUI ,  Hidefumi ODAKA

IPC: H01L27/146 ,  C08G63/183 ,  C08F14/26 ,  C01G19/02 ,  C01G15/00 ,  C08G64/02 ,  C01G9/02

CPC classification number: H01L27/14696 ,  B32B7/02 ,  B32B9/00 ,  C01G9/02 ,  C01G15/00 ,  C01G19/02 ,  C08F14/26 ,  C08G63/183 ,  C08G64/02 ,  H01B5/14 ,  H01L51/0021 ,  H01L2251/306 ,  H05K1/02

Abstract: A substrate with conductive film includes a base material; and a film of a conductive metal oxide arranged on an upper part of the base material. The film includes, by a top plan view, a first region and a second region, the second region is configured of a same material as the first region, and an electric resistance of the second region is higher than an electric resistance of the first region. The second region includes a part configured by a plurality of cellular sections surrounded by a plurality of fine cracks. In the part, each fine crack has a width of 1 nm to 50 nm, and each cellular section has a largest measure of less than 10 μm.

公开(公告)号：US20130233386A1

公开(公告)日：2013-09-12

申请号：US13867490

申请日：2013-04-22

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Yu HANAWA ,  Yutaka KUROIWA ,  Tetsuya NAKASHIMA ,  Reo USUI

IPC: H01L31/02 ,  H01L31/0272

CPC classification number: H01L31/02 ,  C03C3/087 ,  C03C3/093 ,  H01L31/022433 ,  H01L31/03923 ,  H01L31/046 ,  H01L31/0488 ,  H01L31/0749 ,  Y02E10/541

Abstract: A glass substrate for a Cu—In—Ga—Se solar cell. The glass substrate contains specific oxides with the specific amounts, respectively. The glass substrate has a glass transition temperature of from 650 to 750° C., an average coefficient of thermal expansion within a range of from 50 to 350° C. of from 75×10−7 to 95×10−7/° C., a relationship between a temperature (T4), at which a viscosity reaches 104 dPa·s, and a devitrification temperature (TL) of T4−TL≧−30° C., a density of 2.6 g/cm3 or less, and a brittleness index of less than 7,000 m−1/2.

Abstract translation: 一种用于Cu-In-Ga-Se太阳能电池的玻璃基板。 玻璃基板分别含有特定量的特定氧化物。 玻璃基板的玻璃化转变温度为650〜750℃，平均热膨胀系数为50〜350℃，为75×10-7〜95×10-7 /℃ ，粘度达到104dPa·s的温度（T4）与T4-TL> = -30℃的失透温度（TL），2.6g / cm 3以下的密度之间的关系， 脆性指数小于7,000 m-1/2。