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1.
公开(公告)号:US20190276934A1
公开(公告)日:2019-09-12
申请号:US15917224
申请日:2018-03-09
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Todd Dunn , John Kevin Shugrue
IPC: C23C16/455 , C23C16/46 , C23C16/52
Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.
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2.
公开(公告)号:US20150096973A1
公开(公告)日:2015-04-09
申请号:US14563044
申请日:2014-12-08
Applicant: ASM IP Holding B.V.
Inventor: Todd Dunn , Fred Alokozai , Jerry Winkler , Michael Halpin
IPC: H01L21/67 , F28D15/00 , H01L21/687
CPC classification number: H01L21/67103 , F28D15/00 , H01L21/67109 , H01L21/68714 , H01L21/68742
Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.
Abstract translation: 晶片处理装置可以包括具有顶侧和背面的基座,具有间隔构件和加热构件的基座加热器,可移除地安装在基座和基座加热器之间的垫片,由基座背面形成的空腔,基座 加热器和垫片,与空腔连通的流体入口以及与空腔连通的多个流体出口。
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公开(公告)号:US12234552B2
公开(公告)日:2025-02-25
申请号:US18131170
申请日:2023-04-05
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Todd Dunn , John Kevin Shugrue
IPC: C23C16/455 , C23C16/46 , C23C16/52
Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.
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4.
公开(公告)号:US20230243033A1
公开(公告)日:2023-08-03
申请号:US18131170
申请日:2023-04-05
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Todd Dunn , John Kevin Shugrue
IPC: C23C16/455 , C23C16/52 , C23C16/46
CPC classification number: C23C16/45544 , C23C16/52 , C23C16/46
Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.
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公开(公告)号:US20230175127A1
公开(公告)日:2023-06-08
申请号:US18074629
申请日:2022-12-05
Applicant: ASM IP Holding B.V.
IPC: C23C16/448 , C23C16/455 , C23C16/52
CPC classification number: C23C16/4481 , C23C16/45561 , C23C16/52
Abstract: Herein disclosed are systems and methods related to remote delivery systems using solid source chemical bulk fill vessels. The delivery system can include a vapor deposition reactor, two or more bulk fill vessels remote from the vapor deposition reactor, an interconnect line, a line heater, and a gas panel comprising one or more valves. Each bulk fill vessel is configured to hold solid source chemical reactant therein. The bulk fill vessels can each include fluid outlets. The interconnect line can fluidly connect the vapor deposition reactor with each bulk fill vessel. The line heater can heat at least a portion of the interconnect line to at least a minimum line temperature. The one or more valves of the gas panel can switch a flow of vaporized chemical reactant through the interconnect line from being from one fluid outlet to being from another fluid outlet.
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公开(公告)号:US11629406B2
公开(公告)日:2023-04-18
申请号:US15917224
申请日:2018-03-09
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Todd Dunn , John Kevin Shugrue
IPC: C23C16/455 , C23C16/52 , C23C16/46
Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.
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公开(公告)号:US20180130652A1
公开(公告)日:2018-05-10
申请号:US15861418
申请日:2018-01-03
Applicant: ASM IP Holding B.V.
Inventor: Fred Pettinger , Carl White , Dave Marquardt , Sokol Ibrani , Eric Shero , Todd Dunn , Kyle Fondurulia , Mike Halpin
IPC: H01L21/02 , C23C16/455 , C23C16/44 , H01J37/32
CPC classification number: H01L21/02104 , C23C16/4409 , C23C16/4411 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32532
Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.
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公开(公告)号:US20230203654A1
公开(公告)日:2023-06-29
申请号:US18147631
申请日:2022-12-28
Applicant: ASM IP Holding, B.V.
Inventor: Paridhi Gupta , Taku Omori , Cheuk Li , Aadil Vora , Todd Dunn
IPC: C23C16/455 , C23C16/52
CPC classification number: C23C16/45544 , C23C16/52 , C23C16/45587
Abstract: Apparatus and method for semiconductor substrate processing are presented. For devices such as valves used for semiconductor substrate processing especially a process like ALD, there is a need to monitor and control the exact time taken from the signal to open and close the valves so that delay times may be controlled. In an embodiment, an apparatus comprising a reactor, a valve, a process controller and a valve monitor system is presented. The process controller may be operationally connected to the valve and may be provided with a memory. The sensors may be either electrical or optical sensors.
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公开(公告)号:US20220403516A1
公开(公告)日:2022-12-22
申请号:US17842007
申请日:2022-06-16
Applicant: ASM IP Holding B.V.
Inventor: Paul Ma , Eric Shero , Todd Dunn , Jonathan Bakke , Jereld Winkler , Xingye Wang , Eric Jen Cheng Liu
IPC: C23C16/455 , C23C16/02 , C23C16/40 , C23C16/56
Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.
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公开(公告)号:US10714315B2
公开(公告)日:2020-07-14
申请号:US13651144
申请日:2012-10-12
Applicant: ASM IP Holding B.V.
Inventor: Carl White , Todd Dunn , Eric Shero , Kyle Fondurulia
IPC: H01J37/32 , C23C16/455
Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.
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