公开(公告)号：US11069510B2

公开(公告)日：2021-07-20

申请号：US16116708

申请日：2018-08-29

Applicant: ASM IP Holding B.V.

Inventor： Ki Chul Um ,  Hyun Soo Jang ,  Jeong Ho Lee ,  Yong Gyu Han

IPC: H01J37/32 ,  C23C16/509

Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

公开(公告)号：US20190115206A1

公开(公告)日：2019-04-18

申请号：US15949990

申请日：2018-04-10

Applicant: ASM IP HOLDING B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Tae Hee Yoo ,  Wan Gyu Lim ,  Jin Geun Yu

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  C23C16/34

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

公开(公告)号：US20200303180A1

公开(公告)日：2020-09-24

申请号：US16897158

申请日：2020-06-09

Applicant: ASM IP HOLDING B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Tae Hee Yoo ,  Wan Gyu Lim ,  Jin Geun Yu

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  C23C16/34

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

公开(公告)号：US11222772B2

公开(公告)日：2022-01-11

申请号：US15835328

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/40

Abstract: A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

公开(公告)号：US11001925B2

公开(公告)日：2021-05-11

申请号：US15835352

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  H01J37/32

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

公开(公告)号：US10950432B2

公开(公告)日：2021-03-16

申请号：US16897158

申请日：2020-06-09

Applicant: ASM IP HOLDING B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Tae Hee Yoo ,  Wan Gyu Lim ,  Jin Geun Yu

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  C23C16/50 ,  C23C16/455 ,  C23C16/34

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

公开(公告)号：US10934619B2

公开(公告)日：2021-03-02

申请号：US15802154

申请日：2017-11-02

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

公开(公告)号：US20190066978A1

公开(公告)日：2019-02-28

申请号：US16116708

申请日：2018-08-29

Applicant: ASM IP Holding B.V.

Inventor： Ki Chul Um ,  Hyun Soo Jang ,  Jeong Ho Lee ,  Yong Gyu Han

IPC: H01J37/32 ,  C23C16/509

Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

公开(公告)号：US20180166258A1

公开(公告)日：2018-06-14

申请号：US15835328

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01J37/32495 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45542 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32477

Abstract: A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

公开(公告)号：US20180135173A1

公开(公告)日：2018-05-17

申请号：US15802154

申请日：2017-11-02

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  C23C16/509 ,  H01L21/687 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/0262 ,  H01L21/68764

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.