公开(公告)号：US20190181034A1

公开(公告)日：2019-06-13

申请号：US16213479

申请日：2018-12-07

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  C23C16/14 ,  C23C16/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L23/532

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20180068885A1

公开(公告)日：2018-03-08

申请号：US15609497

申请日：2017-05-31

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  C23C16/02 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

公开(公告)号：US09257303B2

公开(公告)日：2016-02-09

申请号：US14613183

申请日：2015-02-03

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/44 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

公开(公告)号：US20160005649A1

公开(公告)日：2016-01-07

申请号：US14737293

申请日：2015-06-11

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US09679808B2

公开(公告)日：2017-06-13

申请号：US14988374

申请日：2016-01-05

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

公开(公告)号：US20150315703A1

公开(公告)日：2015-11-05

申请号：US14557874

申请日：2014-12-02

Applicant: ASM International N.V.

Inventor： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/38 ,  C23C16/34 ,  C23C16/32

CPC classification number: C23C16/45525 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28079 ,  H01L29/517 ,  H01L29/66583

Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

Abstract translation: 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。

公开(公告)号：US10157786B2

公开(公告)日：2018-12-18

申请号：US15356306

申请日：2016-11-18

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20170069527A1

公开(公告)日：2017-03-09

申请号：US15356306

申请日：2016-11-18

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  C23C16/14 ,  H01L23/532 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

Abstract translation: 金属层可以相对于基板的第二表面选择性沉积在衬底的一个表面上。 在一些实施例中，金属层选择性地沉积在铜上而不是绝缘或介电材料。 在一些实施方案中，第一前体在第一表面上形成一层，随后反应或转化以形成金属层。 可以选择沉积温度使得达到高于约50％或甚至约90％的选择性。

公开(公告)号：US09502289B2

公开(公告)日：2016-11-22

申请号：US14737293

申请日：2015-06-11

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L23/528 ,  H01L21/3105 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20160276208A1

公开(公告)日：2016-09-22

申请号：US14988374

申请日：2016-01-05

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.